LRC BAP65-02 Datasheet
Silicon PIN diode
LESHAN RADIO COMPANY, LTD.
FEA TURES
BAP65 – 02
· High voltage, current controlled
· RF resistor for RF switches
· Low diode capacitance
· Low diode forward resistance (low loss)
· Very low series inductance.
APPLICATIONS
· RF attenuators and switches
1
CATHODE
· Bandswitch for TV tuners
· Series diode for mobile communication transmit/receive switch.
2
ANODE
2
SOD523 SC-79
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic package.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
II
P
T
T
F
tot
stg
j
ELECTRICAL CHARACTERISTICS T
continuous reverse voltage – 30 V
continuous forward current – 100 mA
total power dissipation T s <
90°C – 715 mW
storage temperature -65 +150 °C
junction temperature -65 +150 °C
= 25°C unless otherwise specified.
j
SYMBOL P ARAMETER CONDITIONS TYP. MAX. UNIT
|s
|s
|s
|s
|s
V
C
I
R
r
D
21
21
21
21
21
forward voltage I F =50 mA 0.9 1.1 V
F
reverse current V R =20 V – 20 nA
diode capacitance V R = 0; f = 1 M H z 0.65 – pF
d
= 1 V ; f = 1 M H z 0.55 0.9 pF
V
R
V
= 3 V; f = 1 MHz 0.5 0.8 pF
R
= 20 V ; f = 1 M H z 0.375 – p F
V
R
diode forward resistance I F = 1 mA; f = 100 MHz; 1 – Ω
= 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω
I
F
I
= 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω
F
= 100 mA; f = 100 MHz; 0.35 – Ω
I
2
|
2
|
2
|
2
|
2
|
isolation V R = 0; f = 900 MHz 10 – dB
insertion loss I F = 1 mA; f = 900 MHz 0.11 – dB
insertion loss I F = 5 mA; f = 900 MHz 0.08 – dB
insertion loss I F = 10 mA; f = 900 MHz 0.07 – dB
insertion loss I F = 100 mA; f = 900 MHz 0.07 – dB
F
= 0; f = 1800 MHz 5.8 – dB
V
R
V
= 0; f = 2450 MHz 4.4 – dB
R
I
= 1 mA; f = 1800 MHz 0.13 – dB
F
= 1 mA; f = 2450 MHz 0.16 – dB
I
F
= 5 mA; f = 1800 MHz 0.1 1 – dB
I
F
I
= 5 mA; f = 2450 MHz 0.13 – dB
F
I
= 10 mA; f = 1800 MHz 0.1 – dB
F
= 10 mA; f = 2450 MHz 0.13 – dB
I
F
= 100 mA; f = 1800 MHz 0.1 – dB
I
F
I
= 100 mA; f = 2450 MHz 0.128 – dB
F
1
S27–1/2
LESHAN RADIO COMPANY, LTD.
BAP65-02
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL P ARAMETER CONDITIONS TYP. MAX. UNIT
τ
L
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
charge carrier life time when switched from I F =10 mA to 0.17 – µs
L
I
= 6 mA; R L = 100 Ω;
R
measured at I
S
R
th j-s
series inductance I F =10 mA ; f =100MHz 0.6 – nH
thermal resistance from junction to soldering-point 85 K/W
=3 mA
R
10
f = 100 MHz; T j =25°C
( Ω)
D
1
r
-1
10
-1
10
1 10 10
2
I F (mA )
Fig.1 Forward resistance as a function of
forward current; typical values.
0
-0.1
1000
800
600
(pF)
d
C
400
200
f = 1 MHz; T j =25°C
0
048121620
V R ( V )
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
- 10
(dB)
2
-0.2
|
21
|s
-0.3
-0.4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-0.5
0123
(1) I F =0.5 mA.
(2) I F =1 mA.
(3) I F = 5 mA.
(4) I F = 10 mA.
(5) I F = 100mA.
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
(dB)
2
|
- 20
21
|s
- 30
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
- 40
0123
Tamb =25°C.
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S27–2/2
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