LRC BAP64-02 Datasheet
Silicon PIN diode
LESHAN RADIO COMPANY, LTD.
FEATURES
· High voltage, current controlled
· RF resistor for RF attenuators and switches
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD package.
1
CATHODE
2
ANODE
BAP64 – 02
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
II
P
T
T
F
tot
stg
j
continuous reverse voltage – 175 V
continuous forward current – 10 0 mA
total power dissipation T s =
90°C – 715 mW
storage temperature -65 +150 °C
junction temperature -65 +150 °C
1
ELECTRICAL CHARACTERISTICS T
= 25°C unless otherwise specified.
j
SYMBOL P ARAMETER CONDITIONS TYP. MAX. UNIT
V
C
L
I
R
r
D
τ
forward voltage I F =50 mA 0.95 1.1 V
F
reverse current V R =175V – 10 µA
=20V – 1 µA
V
R
diode capacitance V R = 0; f = 1 M H z 0.48 – pF
d
= 1 V ; f = 1 M H z 0.35 – pF
V
R
V
= 20 V ; f = 1 M Hz 0.23 0.35 pF
R
diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 20 40 Ω
I
= 1 mA; f = 100 MHz; note 1 10 20 Ω
F
= 10 mA; f = 100 MHz; note 1 2 3.8 Ω
I
F
I
= 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω
F
charge carrier life time when switched from I F =10 mA to 1.55 – µs
L
I
= 6 mA; R L = 100 Ω;
R
measured at I
series inductance 0.6 – n H
S
=3 mA
R
Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering-point 85 K/W
S26–1/2
LESHAN RADIO COMPANY, LTD.
BAP64-02
2
10
f = 100 MHz; T j =25°C
10
( Ω)
D
r
1
-1
10
-1
10
1 10 10
2
I F (mA )
Fig.1 Forward resistance as a function of
forward current; typical values.
0
-1
500
400
300
(pF)
d
C
200
100
f = 1 MHz; T j =25°C
0
048121620
V R ( V )
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
(dB)
2
-2
|
21
|s
-3
-4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-5
0.5 1 1.5 2 2.5 3
(1) I F =100 mA.
(2) I F =10 mA.
(3) I F = 1 mA.
(4) I F = 0.5 mA.
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
- 10
(dB)
2
|
21
|s
- 20
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
- 30
0.5 1 1.5 2 2.5 3
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
Tamb =25°C.
S26–2/2
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