LRC BAP63-03 Datasheet

Silicon PIN diode

LESHAN RADIO COMPANY, LTD.

FEA TURES

BAP63 – 03

· High speed switching for RF signals

· Low diode capacitance

· Low diode forward resistance

· Very low series inductance

· For applications up to 3 GHz.

APPLICATIONS

· RF attenuators and switches.

2

DESCRIPTION

Planar PIN diode in a SOD323 small SMD plastic package.

1
CATHODE

2
ANODE

SOD523 SC-79

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

II

P
T

T

F

tot

stg

j

ELECTRICAL CHARACTERISTICS T

continuous reverse voltage – 50 V
continuous forward current – 100 mA

total power dissipation T s <

90°C – 500 mW
storage temperature -65 +150 °C
junction temperature -65 +150 °C

= 25°C unless otherwise specified.

j

SYMBOL P ARAMETER CONDITIONS TYP. MAX. UNIT

|s

|s

|s

|s

|s

V

C

I

R

r

D

21

21

21

21

21

forward voltage I F =50 mA 0.95 1.1 V

F

reverse current V R =35 V – 10 nA

diode capacitance V R = 0; f = 1 MHz 0.4 – pF

d

V

= 1 V ; f = 1 M H z 0.35 – pF

R

= 20 V ; f = 1 M Hz 0.27 0.32 pF

V

R

diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 Ω

= 1 mA; f = 100 MHz; note 1 1.95 3 Ω

I

F

I

= 10 mA; f = 100 MHz; note 1 1.17 1.8 Ω

F

= 100 mA; f = 100 MHz; note 1 0.9 1.5 Ω

I

2

|

2

|

2

|

2

|

2

|

isolation V R = 0; f = 900 MHz 15.4 – dB

insertion loss I F = 0.5 mA; f = 900 MHz 0.21 – dB

insertion loss I F = 1 mA; f = 900 MHz 0.18 – dB

insertion loss I F = 10 mA; f = 900 MHz 0.13 – dB

insertion loss I F = 100 mA; f = 900 MHz 0.10 – dB

F

= 0; f = 1800 MHz 10.1 – dB

V

R

V

= 0; f = 2450 MHz 7.8 – dB

R

I

= 0.5 mA; f = 1800 MHz 0.28 – dB

F

= 0.5 mA; f = 2450 MHz 0.38 – dB

I

F

= 1 mA; f = 1800 MHz 0.26 – dB

I

F

I

= 1 mA; f = 2450 MHz 0.35 – dB

F

I

= 10 mA; f = 1800 MHz 0.20 – dB

F

= 10 mA; f = 2450 MHz 0.30 – dB

I

F

= 100mA; f = 1800 MHz 0.18 – dB

I

F

I

= 100 mA; f = 2450 MHz 0.28 – dB

F

1

S25–1/2

LESHAN RADIO COMPANY, LTD.

BAP63-03

ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)

SYMBOL P ARAMETER CONDITIONS TYP. MAX. UNIT

τ

L

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

charge carrier life time when switched from I F =10 mA to 310 – ns

L

I

= 6 mA; R L = 100 Ω;

R

measured at I

S

R

th j-s

series inductance 1.5 – nH

thermal resistance from junction to soldering-point 120 K/W

=3 mA

R

10

f = 100 MHz; T j =25°C

( Ω)

D

1

r

-1

10

-1

10

1 10 10

2

I F (mA )

Fig.1 Forward resistance as a function of

forward current; typical values.

0

(1) I F =100 mA.
(2) I F =10 mA.

-0.1

(3) I F = 1 mA.
(4) I F = 0.5 mA.

500

400

300

(pF)

d

C

200

100

f = 1 MHz; T j =25°C

0

048121620

V R ( V )

Fig.2 Diode capacitance as a function of

reverse voltage; typical values.

0

- 10

(dB)

2

-0.2

|

21

|s

-0.3

-0.4

Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.

-0.5
0123

f (GHz )

Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state

as a function of frequency; typical values.

(dB)

2

|

- 20

21

|s

- 30

Diode zero biased and inserted in

series with a 50 Ω stripline circuit.

- 40
0123

Tamb =25°C.

f (GHz )

Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a

function of frequency; typical values.

S25–2/2