LRC BAP51-02 Datasheet

General purpose PIN diode

FEATURES

· Low diode capacitance

· Low diode forward resistance.

APPLICATIONS

· General RF applications.

DESCRIPTION

General purpose PIN diode in a SOD523 small SMD plastic package.

1
CATHODE

2
ANODE

LESHAN RADIO COMPANY, LTD.

BAP51 – 02

1

2

SOD523 SC-79

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

II

P
T

T

F

tot

stg

j

ELECTRICAL CHARACTERISTICS T

continuous reverse voltage – 60 V
continuous forward current – 50 mA

total power dissipation T s =90°C – 715 mW

storage temperature -65 +150 °C
junction temperature -65 +150 °C

= 25°C unless otherwise specified.

j

SYMBOL P ARAMETER CONDITIONS MI N TYP. MAX. UNIT

V
V

C

I

R

r

D

forward voltage I F =50 mA – 0.95 1.1 V

F

reverse voltage I R =10mA 50 – – V

R

reverse current V R =50 V – – 100 nA

diode capacitance V R = 0; f = 1 MHz – 0.4 – pF

d

= 1 V ; f = 1 M H z – 0.3 0.55 pF

V

R

V

= 5 V ; f = 1 M H z – 0.2 0.35 pF

R

diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 – 5.5 9 Ω

I

= 1 mA; f = 100 MHz; note 1 – 3.6 6.5 Ω

F

= 10 mA; f = 100 MHz; note 1 – 1.5 2.5 Ω

I

F

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering-point 85 K/W

S24–1/2

LESHAN RADIO COMPANY, LTD.

BAP51-02

(dB)

2

|

21

|s

( Ω)
r

D

-0.5

-1.5

10

5

2

1

-1

10

110

I F (mA )

Fig.1 Forward resistance as a function of

forward current; typical values.

0

-1

f = 100 MHz; T j =25°C

(1) I F =10 mA.
(2) I F = 1 mA.
(3) I F = 0.5 mA.

500

400

300

(pF)

d

C

200

100

f = 1 MHz; T j =25°C

0

0 48121620

V R ( V )

Fig.2 Diode capacitance as a function of

reverse voltage; typical values.

0

-5

-10

(dB)

2

|

21

|s

-15

-2

Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.

-2.5

0.5 1 1.5 2 2.5 3

f (GHz )

Fig.3 Insertion loss ( |s 21| 2 ) of the diode in on-state

as a function of frequency; typical values.

-20

Diode zero biased and inserted in

series with a 50 Ω stripline circuit.

-25

0.5 1 1.5 2 2.5 3

Tamb =25°C.

f (GHz )

Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a

function of frequency; typical values.

S24–2/2