LRC BAP50-02 Datasheet
LESHAN RADIO COMPANY, LTD.
General purpose PIN diode
BAP50 – 02
FEATURES
· Low diode capacitance
· Low diode forward resistance.
APPLICATIONS
· General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package.
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
II
P
T
T
F
tot
stg
j
ELECTRICAL CHARACTERISTICS T
continuous reverse voltage – 50 V
continuous forward current – 50 mA
total power dissipation T s =90°C – 715 mW
storage temperature -65 +150 °C
junction temperature -65 +150 °C
= 25°C unless otherwise specified.
j
SYMBOL P ARAMETER CONDITIONS MI N TYP. MAX. UNIT
|s
|s
|s
|s
V
V
C
I
R
r
D
21
21
21
21
forward voltage I F =50 mA – 0.95 1.1 V
F
reverse voltage I R =10µA50––V
R
reverse current V R =50 V – – 100 nA
diode capacitance V R = 0; f = 1 MHz – 0.4 – pF
d
= 1 V ; f = 1 M H z – 0.3 0.55 p F
V
R
V
= 5 V ; f = 1 M H z – 0.22 0.35 pF
R
diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 – 25 40 Ω
I
= 1 mA; f = 100 MHz; note 1 – 14 25 Ω
F
= 10 mA; f = 100 MHz; note 1 – 3 5 Ω
I
2
|
2
|
2
|
2
|
isolation V R = 0; f = 900 MHz – 20.4 – dB
insertion loss I F = 0.5 mA; f = 900 MHz – 1.74 – d B
insertion loss I F = 1 mA; f = 900 MHz – 1.03 – dB
insertion loss I F = 10 mA; f = 900 MHz – 0.26 – dB
F
= 0; f = 1800 MHz – 17.3 – dB
V
R
V
= 0; f = 2450 MHz – 15.5 – dB
R
I
= 0.5 mA; f = 1800 MHz – 1.79 – dB
F
= 0.5 mA; f = 2450 MHz – 1.88 – dB
I
F
= 1 mA; f = 1800 MHz – 1.09 – dB
I
F
I
= 1 mA; f = 2450 MHz – 1.15 – dB
F
I
= 10 mA; f = 1800 MHz – 0.32 – dB
F
= 10 mA; f = 2450 MHz – 0.34 – dB
I
F
2
SOD523 SC-79
1
S23–1/2
LESHAN RADIO COMPANY, LTD.
BAP50-02
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL P ARAMETER CONDITIONS MI N TYP. MAX. UNIT
τ
L
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
charge carrier life time when switched from I F =10 mA to – 1.05 – µs
L
I
= 6 mA; R L = 100 Ω;
R
measured at I
S
R
th j-s
series inductance I F = 100 mA; f = 100 MHz – 0.6 – nH
thermal resistance from junction to soldering-point 85 K/W
=3 mA
R
(dB)
2
|
21
|s
3
10
f = 100 MHz; T j =25°C
2
10
( Ω)
D
r
10
1
-1
10
1 1 0 10
2
I F (mA )
Fig.1 Forward resistance as a function of
forward current; typical values.
0
600
400
(pF)
d
C
200
f = 1 MHz; T j =25°C
0
048121620
V R ( V )
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
I F =10 mA.
-1
-5
I F = 1 mA.
-2
-3
I F = 0.5 mA.
(dB)
2
|
21
|s
-10
-15
-4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-5
0.5 1 1.5 2 2.5 3
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
-20
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
-25
0.5 1 1.5 2 2.5 3
Tamb =25°C.
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S23–2/2
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