LRC BAL99LT1 Datasheet
Switching Diode
LESHAN RADIO COMPANY, LTD.
3
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Peak Forward Current I
R
F
DEVICE MARKING
BAL99LT1 = JF
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
2
CATHODE
70 Vdc
100 mAdc
P
D
θJA
P
D
θJA
stg
BAL99LT1
3
1
2
CASE 318–08, STYLE 18
SOT–23 (TO–236AB)
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current I
(V R = 70 Vdc) — 2.5
(V R = 25 Vdc, T J = 150°C) — 30
(V R = 70 Vdc, T J = 150°C) — 50
Reverse Breakdown Voltage
(I R = 100 µAdc)
Forward Voltage V
(I F = 1.0 mAdc) — 715
(I F = 10 mAdc) — 855
(I F = 50 mAdc) — 1000
(I F = 150 mAdc) — 1250
Recovery Current
(I F = 10 mAdc, V R = 5.0 Vdc, R L = 500 Ω)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 100 Ω, measured at I R = 1.0 mAdc)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
V
(BR)
F
Q
S
C
D
t
rr
V
FR
70 — Vdc
— 45 pC
— 1.5 pF
— 6.0 ns
— 1.75 Vdc
µAdc
mV
G1–1/2
LESHAN RADIO COMPANY, LTD.
BAL99LT1
100
10
T A= 85°C
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T A= 25°C
TA= – 40°C
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Forward V oltage
0.68
0.64
0.60
10
T A = 150°C
1.0
0.1
T A = 125°C
T A = 85°C
T A = 55°C
0.01
, REVERSE CURRENT (µA)
R
I
0.001
010 20 30 4050
V R , REVERSE VOLTAGE (VOLTS)
T A = 25°C
Figure 2. Leakage Current
0.56
, DIODE CAPACITANCE (pF)
D
C
0.52
02 4 6 8
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
G1–2/2
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