LRC BA891 Datasheet
Band-switching diode
LESHAN RADIO COMPANY, LTD.
FEATURES
· Ultra small plastic SMD package
· Low diode capacitance: max. 1.05 pF
· Low diode forward resistance: max. 0.7 Ω
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
The BA891 is a planar, high performance band-switching diode in the ultra small
SOD523 SMD plastic package.
1
CATHODE
2
ANODE
BA 891
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
II
P
T
T
F
tot
stg
j
continuous reverse voltage – 35 V
continuous forward current – 100 mA
total power dissipation T s =90°C – 715 mW
storage temperature -65 +150 °C
junction temperature -65 +150 °C
1
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL P ARAMETER CONDITIONS TYP. MAX. UNIT
V
C
L
I
R
r
D
forward voltage I F =10 mA – 1 V
F
reverse current V R =30 V – 20 nA
diode capacitance f = 1 MHz; note 1; see Fig.1
d
= 1 V 0.8 1.05 pF
V
R
V
= 3 V 0.65 0.9 pF
R
diode forward resistance f = 100 MHz; note 1; see Fig.2
I
= 3 m A 0.45 0.7 Ω
F
= 10 m A 0.36 0.5 Ω
I
F
series inductance 0.6 - nH
S
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering-point 85 K/W
S21–1/2
LESHAN RADIO COMPANY, LTD.
BA 891
1
0.8
0.6
(pF)
d
C
0.4
0.2
f = 1 MHz; T j =25°C
0
0102030
V R ( V )
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
10
( Ω)
D
r
1
f = 100 MHz; T j =25°C
-1
10
–1
10
110
I F (mA )
Fig.2 Diode forward resistance as a function of
forward current; typical values.
S21–2/2
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