LRC BA277 Datasheet
Band-switching diode
LESHAN RADIO COMPANY, LTD.
FEA TURES
· Small plastic SMD package
· Continuous reverse voltage: max. 35 V
· Continuous forward current: max. 100 mA
· Low diode capacitance: max. 1.2 pF
· Low diode forward resistance: max. 0.7 Ω.
APPLICATIONS
· Low loss band switching in VHF television tuners.
· Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523 (SC-79) SMD package.
1
CATHODE
2
ANODE
BA 277
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
ELECTRICAL CHARACTERISTICS T
continuous reverse voltage – 35 V
continuous forward current – 100 mA
total power dissipation Ts =90°C – 715 mW
storage temperature -65 +150 °C
junction temperature -65 +150 °C
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
C
I
R
r
D
forward voltage I F =10 mA 1 V
F
reverse current V R = 25 V 50 nA
= 20 V; T
V
R
diode capacitance f = 1 MHz; V R = 6 V; note 1; see Fig.1 1.2 pF
d
=75°C 1 µA
amb
diode forward resistance I F = 2 mA; f = 100 MHz; note 1; see Fig.2 0.7 Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
1
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering-point 85 K/W
S19–1/2
LESHAN RADIO COMPANY, LTD.
BA 277
10
(pF)
d
C
1
f = 1 MHz; T j =25°C
-1
10
1 10 10
V R ( V )
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
2.5
2.0
1.5
1.0
( Ω)
D
r
0.5
2
f = 100 MHz; T j =25°C
0
–1
10
110
I F (mA )
Fig.2 Diode forward resistance as a function of
forward current; typical values.
S19–2/2
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