Switching diode
LESHAN RADIO COMPANY, LTD.
• Applications
High speed switching
• Features
1) Extremely small surface mounting type.
2) High Speed.(trr=1.2ns T yp.)
3) High reliability.
•Construction
Silicon epitaxial planar
1
CATHODE
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Peak forward current I
Mean rectifying current I
Surge current (1s) I
Junction temperature Tj 125 °C
Storage temperature T
surge
RM
R
FM
O
stg
– 55 ~ +125 °C
2
ANODE
90 V
80 V
225 mA
100 mA
500 mA
1SS400
1
2
EIAJ : SC - 79
JEDEC : SOD - 523
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current I
Capacitance between terminals C
Reverse recovery time t
F
R
T
rr
– – 1.2 V I F=100mA
– – 0.1 µAVR=80V
– 0.72 3.0 pF VR=0.5V , f=1MHz
– – 4nsV
=6V , IF=10mA , RL=100
R
1SS400–1/2
LESHAN RADIO COMPANY, LTD.
1SS400
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
1
1m
100m
(A)
F
10m
1m
FORWARD CURRENT : I
100µ
10µ
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
10
(pF)
T
5
2
1
0.1m
(A)
R
10µ
1µ
100n
REVERSE CURRENT : I
10n
1n
0 20 40 60 80 100 120
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
3
(ns)
rr
2
0.5
0.2
0.1
CAPACIT ANCE BETWEEN TERMINALS : C
02 46 8101214
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between terminals
100
50
(A)
20
surge
10
5
SURGE CURRENT : I
2
1
0.1 1 10 100 1000 10,000
PULSE WIDTH : TW (ms)
Fig.5 Surge current characteristics
1
REVERSE RECOVERY TIME : t
0
0102030
FORWARD CURRENT : I F (mA)
Fig.4 Reverse recovery time characteristics
0.01µF D.U.T.
PULSE GENERATOR
OUTPUT 50Ω
5kΩ
50Ω
SAMPLING
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr)
measurement circuit
1SS400–2/2