DEVICES INCORPORATED
L29C525
Dual Pipeline Register
Pipeline Registers
03/32/2000–LDS.29C525-G
5
1. Maximum Ratings indicate stress
specifications only. Functional operation of these products at values beyond
those indicated in the Operating Conditions table is not implied. Exposure to
maximum rating conditions for extended periods may affect reliability.
2. The products described by this specification include internal circuitry designed to protect the chip from damaging substrate injection currents and accumulations of static charge. Nevertheless, conventional precautions should
be observed during storage, handling,
and use of these circuits in order to
avoid exposure to excessive electrical
stress values.
3. This device provides hard clamping of
transient undershoot and overshoot. Input levels below ground or above VCC
will be clamped beginning at –0.6 V and
VCC + 0.6 V. The device can withstand
indefinite operation with inputs in the
range of –0.5 V to +7.0 V. Device operation will not be adversely affected, however, input current levels will be well in
excess of 100 mA.
4. Actual test conditions may vary from
those designated but operation is guaranteed as specified.
5. Supply current for a given application can be accurately approximated by:
where
N = total number of device outputs
C = capacitive load per output
V = supply voltage
F = clock frequency
6. Tested with all outputs changing every cycle and no load, at a 5 MHz clock
rate.
7. Tested with all inputs within 0.1 V of
VCC or Ground, no load.
8. These parameters are guaranteed
but not 100% tested.
NCV F
4
2
NOTES
9. AC specifications are tested with
input transition times less than 3 ns,
output reference levels of 1.5 V (except
tDIS test), and input levels of nominally
0 to 3.0 V. Output loading may be a
resistive divider which provides for
specified IOH and IOL at an output
voltage of VOH min and VOL max
respectively. Alternatively, a diode
bridge with upper and lower current
sources of IOH and IOL respectively,
and a balancing voltage of 1.5 V may be
used. Parasitic capacitance is 30 pF
minimum, and may be distributed.
This device has high-speed outputs capable of large instantaneous current
pulses and fast turn-on/turn-off times.
As a result, care must be exercised in the
testing of this device. The following
measures are recommended:
a. A 0.1 µF ceramic capacitor should be
installed between VCC and Ground
leads as close to the Device Under Test
(DUT) as possible. Similar capacitors
should be installed between device VCC
and the tester common, and device
ground and tester common.
b. Ground and VCC supply planes
must be brought directly to the DUT
socket or contactor fingers.
c. Input voltages should be adjusted to
compensate for inductive ground and VCC
noise to maintain required DUT input
levels relative to the DUT ground pin.
10. Each parameter is shown as a minimum or maximum value. Input requirements are specified from the point
of view of the external system driving
the chip. Setup time, for example, is
specified as a minimum since the external system must supply at least that
much time to meet the worst-case requirements of all parts. Responses from
the internal circuitry are specified from
the point of view of the device. Output
delay, for example, is specified as a
maximum since worst-case operation of
any device always provides data within
that time.
11. For the tENA test, the transition is
measured to the 1.5 V crossing point
with datasheet loads. For the tDIS test,
the transition is measured to the
±200mV level from the measured
steady-state output voltage with
±10mA loads. The balancing voltage, VTH, is set at 3.5 V for Z-to-0
and 0-to-Z tests, and set at 0 V for Zto-1 and 1-to-Z tests.
12. These parameters are only tested at
the high temperature extreme, which is
the worst case for leakage current.