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j
g
Preliminary data
SIPMOS
Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Type Package Ordering Code
SPP15P10P P-TO220-3-1 Q67042-S4166
SPP15P10P
Product Summary
V
DS
R
DS(on
I
D
-100 V
0.24 Ω
-15 A
P-TO220-3-1
Gate
pin1
Source
pin 3
Drain
pin 2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=-15 A , VDD=-25V, RGS=25Ω
Reverse diode dv/dt
IS=-15A, VDS=-48V, di/dt=-200A/µs, T
jmax
=150°C
I
I
E
dv/dt
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1
D
D puls
AS
GS
tot
T
,
-15
-10.6
-60
230 mJ
6 kV/µs
±20
128 W
st
-55... +175
55/175/56
A
V
°C
Page 1
2002-07-26
Preliminary data
SPP15P10P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJC
thJA
- - 1.17 K/W
-
-
-
-
75
45
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
Gate threshold voltage, VGS = V
I
=-1.54mA
D
Zero gate voltage drain current
VDS=-100V, VGS=0, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
-100 - - V
-4 -3 -2.1
-
-0.1
-1
µA
V
=-100V, VGS=0, Tj=150°C
DS
Gate-source leakage current
VGS=-20V, VDS=0
Drain-source on-state resistance
VGS=-10V, ID=-10.6A
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
I
GSS
R
DS(on)
-
-10
-100
- -10 -100 nA
- 0.18 0.24
Ω
Page 2
2002-07-26
Preliminary data
)
)
g
g
(p
)
SPP15P10P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on
r
d(off
f
s
d
g
|VDS|≥ 2*|ID|*R
ID=-10.7A
VGS=0, VDS=-25V,
f=1MHz
DS(on)max
4.7 9.3 - S
- 944 1180 pF
- 226 283
- 91 114
VDD=-50V, VGS=-10V,
I
=-15A, RG=6Ω
D
- 8.9 13.4 ns
- 30 45
- 35 53
- 22 33
VDD=-80V, ID=-15A - -4.5 -6.7 nC
- -15.3 -23
VDD=-80V, ID=-15A,
V
=0 to -10V
GS
- -33.4 -50
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsedI
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
lateau
VDD=-80V, ID=-15A - -5.7 - V
TA=25°C - - -15 A
- - -60
VGS=0, |IF| = |IS| - -0.94 -1.35 V
VR=-50V, |IF| = |IS|,
di
/dt=100A/µs
F
- 100 150 ns
- 419 628 nC
Page 3
2002-07-26
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