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SPP02N60S5
Datasheet (lnfineon)
9 pgs121.4 Kb0

Datasheet SPP02N60S5, SPB02N60S5 Datasheet (lnfineon)

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SPP02N60S5
SPB02N60S5
Cool MOS Power-Transistor
·
New revolutionary high voltage technology
·
·
Periodic avalanche rated
·
Extreme dv/dt rated
·
Optimized capacitances
·
Improved noise immunity
·
Former development designation:
SPPx5N60S5/SPBx5N60S5
Type
SPP02N60S5 600 V 1.8 A
V
DS
I
D
R
DS(on)
3
W
Package Marking Ordering Code
P-TO220-3-1 02N60S5 Q67040-S4181
G,1
OO
L
MOS
C
Power Semiconductors
D,2
S,3
P-TO263-3-2 02N60S5 Q67040-S4212SPB02N60S5
Maximum Ratings, at
T
= 25 °C, unless otherwise specified
j
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current,
T
= 25 °C
C
t
= 1ms 1)
p
Avalanche energy, single pulse
I
= 1.8 A,
D
V
= 50 V
DD
Avalanche energy (repetitive, limited by
I
= 2.25 A ,
D
V
= 50 V
DD
Avalanche current (repetitive, limited by
Reverse diode dv/dt
I
= 1.8 A,
S
T
= 150 °C
jmax
V
DS
<
V
, di/dt = 100 A/µs,
DSS
Gate source voltage Power dissipation
T
= 25 °C
C
T
T
jmax
jmax
I
D
A
1.8
1.1
I
D puls
E
AS
)
E
AR
)
I
AR
dv/d
t
V
GS
P
tot
3.2
50 mJ
0.1
2.25 A 6 kV/µs
±
20
V
25 W
Operating and storage temperature
T
,
T
j
stg
1
-55... +150 °C
2000-02-07
SPP02N60S5
SPB02N60S5
Electrical Characteristics, at
T
= 25 °C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R R
thJC thJA
- - 5 K/W
- - 62
(Leaded and through-hole packages) SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
Static Characteristics, at
2)
T
= 25 °C, unless otherwise specified
j
Drain-source breakdown voltage
V
= 0 V,
GS
Gate threshold voltage,
I
= 80 µA,
D
I
= 0.25 mA
D
T
= 25 °C
j
V
GS
=
V
DS
R
thJA
V
(BR)DSS
V
GS(th)
-
-
-
35
62
-
600 - - V
3.5 4.5 5.5
Zero gate voltage drain current,
V V
= 0 V,
GS
= 0 V,
GS
T
= 25 °C
j
T
= 150 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-source on-state resistance
V
= 10 V,
GS
I
= 1.1 A
D
V
DS
=
V
DSS
I
DSS
I
GSS
R
DS(on)
-
-
0.5
-
1
50
µA
- - 100 nA
- 2.7 3
W
1
current limited by T
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
jmax
2
2000-02-07
SPP02N60S5
SPB02N60S5
Electrical Characteristics, at Parameter
Dynamic Characteristics
Transconductance
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics
Gate to source charge
T
= 25 °C, unless otherwise specified
j
Symbol Conditions Values Unit
min. typ. max.
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
gs
V
³
DS
I
=1.1A
D
V
=0V,
GS
f
=1MHz
V
=350V,
DD
I
=1.8A,
D
V
=350V,
DD
2*
I
*
R
D
DS(on)max
V
DS
=25V,
,
- 1.4 - S
- 240 - pF
- 77 -
- 4.4 -
V
=10V,
GS
R
=50
W
G
- 35 - ns
- 35 -
- 35 52
- 20 30
I
=1.8A - 2.3 - nC
D
Gate to drain charge Total gate charge
Reverse Diode
Inverse diode continuous forward current
Inverse diode direct current,pulsed
Inverse diode forward voltage Reverse recovery time Reverse recovery charge
Q Q
I
I
V t Q
gd
g
S
SM
SD
rr
rr
- 4.5 -
V
=350V,
DD
V
=0 to 10V
GS
T
=25°C - - 1.8 A
C
I
=1.8A,
D
- 7.3 9.5
- - 3.2
V
=0V,
I
GS
V
=350V,
R
i
/dt=100A/µs
d
F
=1.8A - 1 1.2 V
F
I
l
,
=
F
S
- 860 1460 ns
- 1.6 - µC
3
2000-02-07
SPP02N60S5
SPP02N60S5
SPP02N60S5
SPP02N60S5
SPB02N60S5
Power dissipation
P
= f (
T
)
C
8 6 4 2 0
0 20 40 60 80 100 120
P
tot
tot
28
W
24 22 20 18 16 14 12 10
°C
Drain current
I
= f (
T
D
parameter:
D
I
160
T
C
)
C
V
³
10 V
GS
1.9
A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120
°C
160
T
C
Safe operating area
I
=f (
V
D
DS
)
parameter: D=0.01,
1
10
A
D
I
/
S
D
V
0
10
D
I
-1
10
-2
10
0
10
=
)
n
o
(
S
D
R
10
T
1
=25°C
C
10
Transient thermal impedance
Z
= f (
t
1
0
10
)
p
t
/
T
p
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 single pulse
-5
10
-4
10
-3
10
-2
t
-1
s
10
p
thJC
parameter : D =
10
t
= 11.0µs
p
100 µs
1 ms
10 ms
DC
2
V
V
DS
10
3
K/W
thJC
Z
10
10
10
-1
-2
4
2000-02-07
SPP02N60S5
SPP02N60S5
SPB02N60S5
Typ. output characteristic
I
= f (
V
D
Parameter:
A
A
A
A
A
A
A
A
A
A
D
D
D
D
D
D
D
D
D
D
I
I
I
I
I
I
I
I
I
I
)
DS
V
,
T
= 25 °C
GS
j
6
6
6
6
6
6
6
6
6
6
4
4
4
4
4
4
4
4
4
4
3
3
3
3
3
3
3
3
3
3
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
0 5 10 15
V
V
V
V
V
V
V
V
V
V
20V
12V
10V
9V
8.5V
8V
7.5V 7V
6V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
25
25
25
25
25
25
25
25
25
25
Drain-source on-resistance
R
DS(on)
parameter :
DS(on)
R
= f (
T
)
j
I
17
= 1.1 A,
D
V
GS
W
14
12
10
8
6
4
2
0
-60 -20 20 60 100
98%
typ
= 10 V
°C
180
T
j
Typ. transfer characteristics
I
= f (
V
)
GS
I
x
R
D
DS(on)max
0 4 8 12
V
D
DS
D
I
³
A
2 x
6
4
3
2
1
0
V
Typ. capacitances
C
= f (
V
)
DS
parameter:
10
pF
10
C
10
10
20
V
GS
10
V
=0 V, f=1 MHz
GS
4
3
C
iss
2
C
oss
1
C
rss
0
0 10 20 30 40 50 60 70 80
V
100
V
DS
5
2000-02-07
SPP02N60S5
SPP02N60S5
SPB02N60S5
Avalanche energy
E
= f (
T
I
=1.8A,
D
60
40
30
20
10
)
j
V
=50V
DD
AS
par.:
mJ
AS
E
Avalanche SOA
I
= f (
t
AR
par.:
A
AR
I
T
2.5
1.5
1.0
0.5
)
AR
j(START)
= 25 °C,
T
£ 150 °C
j
0
20 40 60 80 100 120
Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
720
V
680
660
640
620
600
580
= f (
T
)
j
°C
0.0
-3
-2
160
T
j
10
10
-1
10
10 0 10 1 10
2
µs
t
AR
10
4
Gate threshold voltage
V
parameter:
V
GS(th)
7
V
5
GS(th)
4
3
2
= f (
T V
)
j GS
=
V
DS
,
I
= 80 µA
D
98%
typ.
2%
560
540
-60 -20 20 60 100
°C
1
180
T
j
6
0
-60 -20 20 60 100
°C
180
T
j
2000-02-07
SPP02N60S5
SPP02N60S5
SPP02N60S5
SPB02N60S5
Forward characteristics of reverse diode
I
= f (VSD)
F
parameter:
10
A
10
F
I
-1
10
-2
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4
T
, tp = 80 µs
j
1
0
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
V
3.0
V
SD
Typ. gate charge
V
= f (
GS
Q
parameter:
16
V
12
GS
10
V
8
6
4
2
0
0 1 2 3 4 5 6 7 8
)
Gate
I
= 1.8 A pulsed
D
0,2
V
DS max
0,8
V
DS max
nC
Q
10
g
7
2000-02-07
SPP02N60S5
SPB02N60S5
P-TO220-3-1
P-TO220-3-1
dimensions
symbol [mm] [inch]
minmaxminmax A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071
2.54 typ. 0.1 typ.
TO-263 (D²Pak/P-TO220SMD)
dimensions
symbol
A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E F 0.65 0.85 0.0256 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U V
W
X Y Z
[mm] [inch]
minmaxminmax
2.54 typ.
5.08 typ.
15 typ.
8° max
10.80
1.15
6.23
4.60
9.40
16.15
0.1 typ.
0.2 typ.
0.5906 typ.
8° max
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
8
2000-02-07
SPP02N60S5
SPB02N60S5
Published by Infineon Technologies AG,
Bereichs Kommunikation St.-Martin-Strasse 53,
D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
9
2000-02-07
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