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j
)
j
A
j
A
j
g
Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP15N60C3 P-TO220-3-1 Q67040-S4600
SPI15N60C3 P-TO262-3-1 Q67040-S4601
SPA15N60C3 P-TO220-3-31 Q67040-S4603
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
2
1
P-TO220-3-31
Marking
15N60C3
15N60C3
15N60C3
VDS @ T
R
3
DS(on
I
D
max
650 V
0.28 Ω
15 A
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=7.5A, V
D
Avalanche energy, repetitive t
I
=15A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
max
jmax
max
2)
I
I
E
E
I
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
D
D puls
AS
AR
R
GS
GS
tot
SPP_I
15
9.4
45 45 A
460 460 mJ
0.8 0.8
15 15 A
±20 ±20 V
±30 ±30
156 34 W
SPA
1)
15
9.4
A
1)
Operating and storage temperature T
Page 1
T
,
st
-55...+150 °C
2003-07-01
SPP15N60C3, SPI15N60C3
)
Final data
Maximum Ratings
Parameter Symbol Value Unit
SPA15N60C3
Drain Source voltage slope
V
= 480 V, I
DS
= 15 A, T
D
= 125 °C
j
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
thJC
thJC_FP
thJA
thJA_FP
sold
- - 0.8 K/W
- - 3.7
- - 62
- - 80
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=15A - 700 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
I
=675µA, V
D
VDS=600V, V
T
=25°C
j
T
=150°C
j
VGS=30V, V
V
=10V, ID=9.4A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 1.23 -
Page 2
GS=VDS
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
-
-
-
-
0.1
-
0.25
0.68
µA
1
100
Ω
0.28
-
2003-07-01
SPP15N60C3, SPI15N60C3
(
)
Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
SPA15N60C3
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
gs
gd
g
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
D*RDS(on)max
=9.4A
DS
=25V,
,
- 11.9 - S
- 1660 - pF
- 540 -
- 40 -
V
=0V,
GS
V
=0V to 480V
DS
- 80 -
- 127 -
VDD=480V, V
I
=15A,
D
R
=4.3Ω
G
=0/10V,
GS
- 10 - ns
- 5 -
- 50 80
- 5 10
V
=480V, ID=15A - 7 - nC
DD
- 29 -
V
=480V, ID=15A,
DD
V
=0 to 10V
GS
- 63 -
V
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
=480V, ID=15A - 5 - V
DD
=EAR*f.
AV
Page 3
oss
while V
oss
while V
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
2003-07-01
DSS
DSS
.
.
SPP15N60C3, SPI15N60C3
Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 15 A
C
forward current
SPA15N60C3
Inverse diode direct current,
I
SM
- - 45
pulsed
V
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=IS - 1 1.2 V
GS
V
=480V, IF=IS ,
R
di
/dt=100A/µs
F
- 460 - ns
- 27 - µC
- 55 - A
T
=25°C - 1300 - A/µs
j
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
SPP_B SPP_B
0.012 0.012 K/W C
0.023 0.023 C
0.043 0.043 C
0.156 0.176 C
0.178 0.371 C
0.072 2.522 C
SPA SPA
th1
th2
th3
th4
th5
th6
0.0002495 0.0002495 Ws/K
0.0009406 0.0009406
0.001298 0.001298
0.00362 0.00362
0.009046 0.008025
0.412 0.412
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
C
Page 4
R
th,n
th,n
T
case
amb
External Heatsink
2003-07-01
Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
1 Power dissipation
P
= f (T
tot
tot
P
170
W
140
120
100
80
60
40
20
)
C
SPP15N60C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
T
160
j
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10
10
-1
-2
10
DC
0
10
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (V
D
parameter: D = 0, T
10
A
10
D
I
10
10
2
V
V
DS
10
3
10
-1
-2
2
1
0
10
DS
0
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
= 25°C
C
1
10
2
V
V
DS
10
3
Page 5
2003-07-01
Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
5 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = tp/T
1
10
K/W
0
10
thJC
-1
Z
10
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-4
10
-3
10
10
10
-2
-3
-4
10
-7
10
-6
10
-5
6 Transient thermal impedance FullPAK
Z
= f (t
thJC
parameter: D = t
10
K/W
10
thJC
Z
10
10
10
-1
10
s
t
p
10
-1
-2
-3
-4
1
0
10
)
p
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-7
-6
-5
-4
-3
-2
10
10
10
10
10
10
-1
t
1
10
s
p
7 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
60
Vgs = 20V
Vgs = 7V
Vgs = 6.5V
A
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
40
Vgs = 4V
D
I
30
20
10
0
0 4 8 12 16 20
=25°C
j
= 10 µs, V
p
GS
V
V
DS
28
8 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
30
Vgs = 20V
Vgs = 7V
Vgs = 6V
A
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
20
D
I
15
10
5
0
0 4 8 12 16 20
=150°C
j
= 10 µs, V
p
GS
V
V
28
DS
Page 6
2003-07-01
Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
9 Typ. drain-source on resistance
R
DS(on)
parameter: Tj=150°C, V
R
=f(I
)
D
1.8
Ω
1.4
DS(on)
1.2
1
0.8
0.6
0.4
0 5 10 15 20
GS
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V
Vgs = 20V
A
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
30
I
D
= f (Tj)
= 9.4 A, V
D
SPP15N60C3
1.6
Ω
1.2
DS(on)
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
98%
typ
= 10 V
GS
°C
180
T
j
11 Typ. transfer characteristics
ID= f ( VGS ); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
60
A
40
D
I
30
20
10
0
0 2 4 6
25°C
150°C
V
V
GS
10
12 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 15 A pulsed
SPP15N60C3
16
V
12
0,2
GS
10
V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
V
DS max
0,8 V
DS max
nC
Q
100
Gate
Page 7
2003-07-01
Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
2
SPP15N60C3
10
A
1
10
F
I
0
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
15
A
AR
I
9
6
10
-2
=125°C
-1
10
3
0
10
T
j(START)
-3
T
j(START)
10 0 10 1 10
=25°C
2
µs
t
AR
10
4
15 Avalanche energy
E
= f (T
AS
par.: I
mJ
AS
E
0.5
0.3
0.2
0.1
)
j
= 7.5 A, V
D
0
20 40 60 80 100 120
DD
= 50 V
°C
T
16 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
j
= f (T
SPP15N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
)
j
°C
180
T
j
Page 8
2003-07-01
Final data
SPP15N60C3, SPI15N60C3
SPA15N60C3
17 Avalanche power losses
P
= f (f )
AR
parameter: E
900
W
700
600
AR
P
500
400
300
200
100
0
4
10
=0.8mJ
AR
10
5
Hz
18 Typ. capacitances
C = f (V
parameter: V
10
pF
10
C
10
10
6
10
f
10
)
DS
=0V, f=1 MHz
GS
4
C
iss
3
C
2
1
0
0 100 200 300 400
C
rss
oss
V
V
600
DS
19 Typ. C
E
=f(V
oss
15
µJ
oss
E
9
6
3
0
0 100 200 300 400
stored energy
oss
)
DS
V
V
600
DS
Page 9
2003-07-01
Final data
Definition of diodes switching characteristics
SPP15N60C3, SPI15N60C3
SPA15N60C3
Page 10
2003-07-01
P-TO-220-3-1
±0.4
10
±0.2
3.7
SPP15N60C3, SPI15N60C3
Final data
B
4.44
A
±0.13
1.27
SPA15N60C3
±0.6
±0.2
2.8
0.05
15.38
±0.5
3x
0.75
1.17
±0.9
5.23
±0.1
±0.22
13.5
M
BA0.25
C
C
2.54
2x
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
0.5
2.51
±0.48
9.98
±0.1
±0.2
Page 11
2003-07-01
P-TO-262-3-1 (I2-PAK)
±0.2
10
0...0.3
1)
±0.3
8.5
1)
7.55
±0.3
1
11.6
C
±0.2
4.55
0...0.15
1.05
3 x 0.75
2.54
2 x
A
±0.5
13.5
±0.1
SPP15N60C3, SPI15N60C3
Final data
B
4.4
1.27
0.05
2.4
2.4
M
BA0.25
C
0.5
±0.2
9.25
±0.1
SPA15N60C3
1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 12
2003-07-01
SPP15N60C3, SPI15N60C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
SPA15N60C3
Page 13
2003-07-01
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