Datasheet BTS 7930B Datasheet (lnfineon)

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Data Sheet, Rev. 2.0, June 2006

BTS 7930B

High Current PN Half Bridge

TM

NovalithIC

30 A, 10 mΩ + 18 mΩ typ.

Automotive Power

Never stop thinking.

High Current PN Half Bridge

BTS 7930B

Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

4 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 11

4.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

4.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 16

4.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

4.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17

4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20

5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

7 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Data Sheet 1 Rev. 2.0, 2006-06-01

High Current PN Half Bridge
NovalithIC

TM

BTS 7930B

Product Summary

The BTS 7930B is a fully integrated high current half
bridge for motor drive applications. It is part of the

NovalithICTM family containing one p-channel highside

MOSFET and one n-channel lowside MOSFET with an
integrated driver IC in one package. Due to the p-channel
highside switch the need for a charge pump is eliminated
thus minimizing EMI. Interfacing to a microcontroller is
made easy by the integrated driver IC which features
logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit.

The BTS 7930B provides a cost optimized solution for protected high current PWM
motor drives with very low board space consumption.

BTS 7930B

P-TO-263-7

Basic Features

• Path resistance of typ. 28 mΩ @ 25 °C

• Low quiescent current of typ. 7 µA @ 25 °C

• PWM capability of up to 25 kHz combined with active freewheeling

• Switched mode current limitation for reduced power dissipation in overcurrent

• Current limitation level of 30 A typ.

• Status flag diagnosis with current sense capability

• Overtemperature shut down with latch behaviour

• Overvoltage lock out

• Undervoltage shut down

• Driver circuit with logic level inputs

• Adjustable slew rates for optimized EMI

Type Package

BTS 7930B P-TO-263-7

Data Sheet 2 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Overview

1Overview

The BTS 7930B is part of the NovalithIC family containing three separate chips in one
package: One p-channel highside MOSFET and one n-channel lowside MOSFET
together with a driver IC, forming a fully integrated high current half-bridge. All three
chips are mounted on one common leadframe, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on
state resistance. Due to the p-channel highside switch the need for a charge pump is
eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew
rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit. The BTS
combined with other BTS

7930B to form H-bridge and 3-phase drive configurations.

1.1 Block Diagram

BTS 7930B

HS base-chip

7930B can be

VS

Top-chip

IN

INH

SR

IS

Gate Driver
Dead Time Gen.
Slew Rate Adj.
UV Shut Down
OV Lock Out
Current Lim.
Diagnosis
Current Sense

LS bas e-c hip

OUT

GND

Figure 1 Block Diagram

Data Sheet 3 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

1.2 Terms

Following figure shows the terms used in this data sheet.

V

VS ,VS

I

IN

V

IN

I

INH

V

INH

I

SR

V

SR

I

IS

V

IS

Figure 2Terms

IN

INH

BTS 7930B

SR

IS

VS

GND

I

IVS, -I

D(HS)

GND,ID(LS)

OUT

I

OUT

V

SD (L S)

V

DS(HS)

, I

L

Overview

V

OUT

Data Sheet 4 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

2 Pin Configuration

2.1 Pin Assignment

BTS 7930B
P-TO-263-7

8

123567

4

Figure 3 Pin Assignment BTS 7930B (top view)

Pin Configuration

2.2 Pin Definitions and Functions

Pin Symbol I/O Function

1 GND - Ground

2 IN I Input

Defines whether high- or lowside switch is activated

3 INH I Inhibit

When set to low device goes in sleep mode

4,8 OUT O Power output of the bridge

5 SR I Slew Rate

The slew rate of the power switches can be adjusted
by connecting a resistor between SR and GND

6 IS O Current Sense and Diagnosis

7 VS - Supply

Bold type: pin needs power wiring

Data Sheet 5 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Maximum Ratings

3 Maximum Ratings

-40 °C < Tj < 150 °C (unless otherwise specified)

Pos Parameter Symbol Limits Unit Test Condition

min max

Electrical Maximum Ratings

3.0.1 Supply voltage V

3.0.2 Logic Input Voltage V

3.0.3 HS/LS continuous drain
current

3.0.4 HS/LS pulsed drain
current

3.0.5 HS/LS PWM current I

3.0.6 Voltage at SR pin V

3.0.7 Voltage between VS and

VS

IN

V

INH

I

D(HS)

I

D(LS)

I

D(HS)

I

D(LS)

D(HS)

I

D(LS)

SR

V

VS -VIS

IS pin

3.0.8 Voltage at IS pin V

IS

Thermal Maximum Ratings

3.0.9 Junction temperature T

3.0.10 Storage temperature T

j

stg

ESD Susceptibility

3.0.11 ESD susceptibility HBM

V

ESD

IN, INH, SR, IS

OUT, GND, VS

1)

Maximum reachable current may be smaller depending on current limitation level

-0.3 45 V

-0.3 5.3 V

-20 20

1)

A TC < 85°C

-50 501)A TC < 85°C

-26 261)A TC < 85°C

-28 281)A TC < 85°C

-0.3 1.0 V

-0.3 45 V

-20 45 V

-40 150 °C

-55 150 °C

kV according to EIA/

-2

2

-4

4

switch active

t

= 10ms

pulse

single pulse

f = 1kHz, DC = 50%

f = 20kHz, DC = 50%

JESD 22-A 114B

Note: Maximum ratings are absolute ratings; exceeding any one of these values may

cause irreversible damage to the device. Exposure to maximum rating conditions
for extended periods of time may affect device reliability

Data Sheet 6 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4 Block Description and Characteristics

4.1 Supply Characteristics

– 40 °C < Tj < 150 °C, 8 V < VS < 18 V, IL = 0A (unless otherwise specified)

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

General

4.1.1 Operating Voltage V

4.1.2 Supply Current I

4.1.3 Quiescent Current I

S

VS(on)

VS(off)

5.5 – 28.0 V

– 2 3 mA V

– 7 15 µA V

– – 65 µA V

= 5 V

INH

V

= 0 V or 5 V

IN

R

=0 Ω

SR

DC-mode
normal operation
(no fault condition)

= 0 V

INH

V

= 0 V or 5 V

IN

T

<85 °C

j

= 0 V

INH

V

= 0 V or 5 V

IN

Data Sheet 7 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2 Power Stages

The power stages of the BTS 7930B consist of a p-channel vertical DMOS transistor for
the high side switch and a n-channel vertical DMOS transistor for the low side switch. All
protection and diagnostic functions are located in a separate top chip. Both switches can
be operated up to 25 kHz, allowing active freewheeling and thus minimizing power
dissipation in the forward operation of the integrated diodes.

The on state resistance RON is dependent on the supply voltage VS as well as on the
junction temperature
Figure 4.

High Side Sw itch

40

mΩ

35

30

R

ON(HS)

25

20

15

10

5

4 8 12 16 20 24 28

T

. The typical on state resistance characteristics are shown in

j

Low Side Switc h

70

mΩ

60

50

R

ON(LS)

40

Tj = 150°C

Tj = 25°C

Tj = -40°C

V

S

V

V

S

Tj = 150°C

Tj = 25°C

Tj = -40°C

30

20

V

10

4 8 12 16 20 24 28

Figure 4 Typical On State Resistance vs. Supply Voltage

Data Sheet 8 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2.1 Power Stages - Static Characteristics

– 40 °C < Tj < 150 °C, 8 V < VS < 18 V (unless otherwise specified)

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

High Side Switch - Static Characteristics

4.2.1 On state high side
resistance

4.2.2 Leakage current high
side

4.2.3 Reverse diode
forward-voltage high

1)

side

Low Side Switch - Static Characteristics

4.2.4 On state low side
resistance

4.2.5 Leakage current low
side

4.2.6 Reverse diode
forward-voltage low

1)

side

1)

Due to active freewheeling, diode is conducting only for a few µs, depending on R

R

ON(HS)

I

L(LKHS)

V

DS(HS)

R

ON(LS)

I

L(LKLS)

V

SD(LS)

mΩ I

–

101513

–

19

– – 1 µA V

– – 50 µA V

V I

–

0.9

1.5

–

0.8

1.1

–

0.6

0.8

mΩ I

–

183024

–

40

– – 1 µA V

– – 15 µA V

V I

–

0.9

1.5

–

0.8

1.1

–

0.7

0.9

SR

= 8 A

OUT

V

= 13.5 V

S

T

= 25 °C

j

T

= 150 °C

j

= 0 V

INH

V

= 0 V

OUT

T

< 85 °C

j

= 0 V

INH

V

= 0 V

OUT

T

= 150 °C

j

= -8 A

OUT

T

= -40 °C

j

T

= 25 °C

j

T

= 150 °C

j

= -8 A

OUT

V

= 13.5V

S

T

= 25 °C

j

T

= 150 °C

j

= 0 V

INH

V

= V

OUT

T

< 85 °C

j

= 0 V

INH

V

= V

OUT

T

= 150 °C

j

= 8 A

OUT

T

= -40 °C

j

T

= 25 °C

j

T

= 150 °C

j

S

S

Data Sheet 9 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2.2 Switching Times

IN

t

V

OUT

90%

10%

Figure 5 Definition of switching times high side (R

IN

V

OUT

90%

dr(HS)tr(HS)

t

df( LS)tf(LS)

∆V

OUT

t

df(H S)tf(HS)

∆V

OUT

to GND)

load

t

dr(LS)tr(LS)

t

90%

10%

t

t

90%

10%

∆V

OUT

∆V

OUT

10%

t

Figure 6 Definition of switching times low side (R

load

to VS)

Due to the timing differences for the rising and the falling edge there will be a slight
difference between the length of the input pulse and the length of the output pulse. It can
be calculated using the following formulas:

•

∆

t

= (t

HS

•

∆

t

= (t

LS

Data Sheet 10 Rev. 2.0, 2006-06-01

dr(HS)

df(LS)

+ 0.5 t

+ 0.5 t

r(HS)

f(LS)

) - (t

) - (t

df(HS)

dr(LS)

+ 0.5 t

+ 0.5 t

f(HS)

r(LS)

)

).

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2.3 Power Stages - Dynamic Characteristics

-40 °C < Tj < 150 °C, VS = 13.5 V, R

Pos. Parameter Symbol Limit Values Unit Test Conditions

HIgh Side Switch Dynamic Characteristics

4.2.7 Rise-time of HS t

r(HS)

4.2.8 Slew rate HS on ∆V

t

r( HS)

4.2.9 Switch on delay time

t

dr(HS)

HS

4.2.10 Fall-time of HS t

f(HS)

4.2.11 Slew rate HS off -∆V

t

f(HS)

4.2.12 Switch off delay time

t

df(HS)

HS

= 4Ω (unless otherwise specified)

load

min. typ. max.

OUT

OUT

0.5

/

1.7

5.6

0.5

/

1.2

1

1.5

–

2

–

2

5

11

–

11

–

–

6

–

–

2

–

3.1

4.5

–

4.4

–
2

–
–
–

2.4

–

3.4

4

14

11

10

–

22.4

1

1.5

2

–

5

11

–

6

–

2

–

3.6
–

16

µs

V/µs

µs

µs

V/µs

µs

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

Data Sheet 11 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

-40 °C < Tj < 150 °C, VS = 13.5 V, R

load

Block Description and Characteristics

= 4Ω (unless otherwise specified)

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

Low Side Switch Dynamic Characteristics

4.2.13 Rise-time of LS t

r(LS)

4.2.14 Slew rate LS switch off ∆V

t

r(LS)

4.2.15 Switch off delay time

t

dr(LS)

LS

4.2.16 Fall-time of LS t

f(LS)

4.2.17 Slew rate LS switch on -∆V

t

f(LS)

4.2.18 Switch on delay time

t

df(LS)

LS

OUT

OUT

0.5

1

–

2

2

5

/

–

11

–

6

–

2

0.7

1.3

–

2.2

2

5

0.5

1

–

2

2

5

/

–

11

–

6

–

2

2.2

6.4

4

–

5.6
16

1.5
–

11

–
–
–

1.9
–

11

1.5
–

11

–
–
–

5.8
–

25.4

µs

V/µs

µs

µs

V/µs

µs

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

R

SR

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

= 0 Ω
= 5.1 kΩ
= 51 kΩ

Data Sheet 12 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.3 Protection Functions

The device provides integrated protection functions. These are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are
considered as “outside” normal operating range. Protection functions are not to be used
for continuous or repetitive operation, with the exception of the current limitation

Chapter 4.3.4). In a fault condition the BTS 7930B will apply the highest slew rate

(
possible independent of the connected slew rate resistor. Overvoltage, overtemperature
and overcurrent are indicated by a fault current I
paragraph

“Status Flag Diagnosis With Current Sense Capability” on Page 17 and

at the IS pin as described in the

IS(LIM)

Figure 10.

In the following the protection functions are listed in order of their priority. Overvoltage
lock out overrides all other error modes.

4.3.1 Overvoltage Lock Out

To assure a high immunity against overvoltages (e.g. load dump conditions) the device
shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage
is exceeding the over voltage protection level
again with a hysteresis
voltage

V

. In H-bridge configuration, this behavior of the BTS 7930B will lead to

OV(ON)

V

OV(HY)

if the supply voltage decreases below the switch-on

V

. The IC operates in normal mode

OV(OFF)

freewheeling in highside during over voltage.

4.3.2 Undervoltage Shut Down

To avoid uncontrolled motion of the driven motor at low voltages the device shuts off
(output is tri-state), if the supply voltage drops below the switch-off voltage
IC becomes active again with a hysteresis
switch-on voltage

V

UV(ON)

.

V

UV(HY)

if the supply voltage rises above the

V

UV(OFF)

. The

4.3.3 Overtemperature Protection

The BTS 7930B is protected against overtemperature by an integrated temperature
sensor. Overtemperature leads to a shut down of both output stages. This state is

t

latched until the device is reset by a low signal with a minimum length of
pin, provided that its temperature has decreased at least the thermal hysteresis ∆

reset

at the INH

T in the

meantime.

Repetitive use of the overtemperature protection might reduce lifetime.

4.3.4 Current Limitation

The current in the bridge is measured in both switches. As soon as the current in forward

I

direction in one switch (high side or low side) is reaching the limit
deactivated and the other switch is activated for

Data Sheet 13 Rev. 2.0, 2006-06-01

t

. During that time all changes at the

CLS

, this switch is

CLx

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off.
After

t

the switches return to their initial setting. The error signal at the IS pin is reset

CLS

t

after 2 *

. Unintentional triggering of the current limitation by short current spikes

CLS

(e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due
to thresholds and reaction delay times of the filter circuitry the effective current limitation

I

level

depends on the slew rate of the load current dI/dt as shown in Figure 8

CLx

I

I

I

CLx0

L

CLx

t

CLS

t

Figure 7 Timing Diagram Current Limitation (Inductive Load)

Low SideSwitchHigh Side Switch

55

50

I

CLH0

Tj = 25° C

[A]

45

CLH

I

40

35

30

25

20

0 500 1000 1500 2000

dIL/dt

Tj = -40°C

Tj = 150°C

[A/ms]

55

50

[A]

45

CLL

I

40

I

35

30

25

20

0 500 1000 1500 2000

Tj = 25°C

CLL0

Tj = 150°C

dIL/dt

Tj = -40°C

[A/ms]

Figure 8 Current Limitation Level vs. Current Slew Rate dI/dt

Data Sheet 14 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

High Side Switch

50

A

45

40

I

CLH

35

30

25

20

4 6 8 101214161820

Tj = -40°C

Tj = 25°C

Tj = 150°C

V

S

V

Block Description and Characteristics

Low Side Switch

50

A

45

40

I

CLL

35

Tj = 25°C

30

25

20

4 6 8 10 12 14 16 18 20

V

S

Tj = -40°C

Tj = 150°C

V

Figure 9 Typical Current Limitation Detection Levels vs. Supply Voltage

In combination with a typical inductive load, such as a motor, this results in a switched
mode current limitation. That way of limiting the current has the advantage that the power
dissipation in the BTS 7930B is much smaller than by driving the MOSFETs in linear
mode. Therefore it is possible to use the current limitation for a short time without
exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current
during motor start up). However, the regular use of the current limitation is allowed as
long as the specified maximum junction temperature is not exceeded. Exceeding this
temperature can reduce the lifetime of the device.

4.3.5 Short Circuit Protection

The device is short circuit protected against

• output short circuit to ground

• output short circuit to supply voltage

• short circuit of load

The short circuit protection is realized by the previously described current limitation in
combination with the over-temperature shut down of the device

Data Sheet 15 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.3.6 Electrical Characteristics - Protection Functions

– 40 °C < Tj < 150 °C; 8 V < VS < 18 V (unless otherwise specified)

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

Under Voltage Shut Down

4.3.1 Switch-ON voltage V

4.3.2 Switch-OFF voltage V

4.3.3 ON/OFF hysteresis V

UV(ON)

UV(OFF)

UV(HY)

Over Voltage Lock Out

4.3.4 Switch-ON voltage V

4.3.5 Switch-OFF voltage V

4.3.6 ON/OFF hysteresis V

OV(ON)

OV(OFF)

OV(HY)

Current Limitation

4.3.7 Current limitation

I

CLH0

detection level high
side

4.3.8 Current limitation

I

CLL0

detection level low
side

Current Limitation Timing

4.3.9 Shut off time for HS

t

CLS

and LS

Thermal Shut Down

4.3.10 Thermal shut down

T

jSD

junction temperature

4.3.11 Thermal switch on

T

jSO

junction temperature

4.3.12 Thermal hysteresis ∆T – 7 – K –

4.3.13 Reset pulse at INH pin

t

reset

(INH low)

– – 5.5 V VS increasing

4.0 – 5.4 V VS decreasing

– 0.2 – V –

27.8 – – V VS decreasing

28.0 – 30 V VS increasing

– 0.2 – V –

A VS=13.5 V

30

42
28
26

40

38

54
52
50

T

= -40 °C

j

T

= 25 °C

j

T

= 150 °C

j

A VS=13.5V

20

32
19
18

31

30

43
42
41

T

= -40 °C

j

T

= 25 °C

j

T

= 150 °C

j

70 115 210 µs VS=13.5V

155 175 200 °C –

150 – 190 °C –

4 – – µs –

Data Sheet 16 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.4 Control and Diagnostics

4.4.1 Input Circuit

The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with
hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH
pin to high enables the device. In this condition one of the two power switches is switched
on depending on the status of the IN pin. To deactivate both switches, the INH pin has
to be set to low. No external driver is needed. The BTS

7930B can be interfaced directly

to a microcontroller.

4.4.2 Dead Time Generation

In bridge applications it has to be assured that the highside and lowside MOSFET are
not conducting at the same time, connecting directly the battery voltage to GND. This is
assured by a circuit in the driver IC, generating a so called dead time between switching
off one MOSFET and switching on the other. The dead time generated in the driver IC is
automatically adjusted to the selected slew rate.

4.4.3 Adjustable Slew Rate

In order to optimize electromagnetic emission, the switching speed of the MOSFETs is
adjustable by an external resistor. The slew rate pin SR allows the user to optimize the
balance between emission and power dissipation within his own application by

R

connecting an external resistor

to GND.

SR

4.4.4 Status Flag Diagnosis With Current Sense Capability

The status pin IS is used as a combined current sense and error flag output. In normal
operation (current sense mode), a current source is connected to the status pin, which
delivers a current proportional to the forward load current flowing through the active high
side switch. If the high side switch is inactive or the current is flowing in the reverse

I

direction no current will be driven except for a marginal leakage current

R

external resistor
value of 6000 for the current sense ratio

V

= (IL / 6 A)V. In case of a fault condition the status output is connected to a current

to

IS

source which is independent of the load current and provides I

determines the voltage per output current. E.g. with the nominal

IS

k

= IL / IIS, a resistor value of RIS = 1kΩ leads

ILIS

. The maximum

IS(lim)

voltage at the IS pin is determined by the choice of the external resistor and the supply
voltage. In case of current limitation the I

Data Sheet 17 Rev. 2.0, 2006-06-01

is activated for 2 * t

IS(lim)

CLS

.

IS(LK)

. The

High Current PN Half Bridge

BTS 7930B

Normal operation:

current sense mode

VS

ESD-ZD

IS

IIS~ I

Load

I

IS(lim)

Sense
output

logic

V

R

IS

IS

Figure 10 Sense current and fault current

Block Description and Characteristics

Fault condition:
error flag mode

VS

ESD-ZD

IS

Sense

V

R

I

IS(lim)

output
logic

IS

IS

Data Sheet 18 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.4.5 Truth Table

Device State Inputs Outputs Mode

INH IN HSS LSS IS

Normal operation 0 X OFF OFF 0 Stand-by mode

1 0 OFF ON 0 LSS active

1 1 ON OFF CS HSS active

Over-voltage (OV) X X ON OFF 1 Shut-down of LSS,

HSS activated,
error detected

Under-voltage (UV) X X OFF OFF 0 UV lockout

Overtemperature or
short circuit of HSS or
LSS

Current limitation mode 1 1 OFF ON 1 Switched mode, error

0 X OFF OFF 0 Stand-by mode, reset

of latch

1 X OFF OFF 1 Shut-down with latch,

error detected

detected

1 0 ON OFF 1 Switched mode, error

detected

Inputs: Switches Status Flag IS:

0 = Logic LOW OFF = switched off CS = Current sense mode

1 = Logic HIGH ON = switched on 1 = Logic HIGH (error)

X = 0 or 1

Data Sheet 19 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.4.6 Electrical Characteristics - Control and Diagnostics

– 40 °C < Tj < 150 °C, 8 V < VS < 18 V (unless otherwise specified)

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

Control Inputs (IN and INH)

4.4.1 High level voltage
INH, IN

4.4.2 Low level voltage
INH, IN

4.4.3 Input voltage
hysteresis

4.4.4 Input current I

4.4.5 Input current I

Current Sense

4.4.6

Current sense ratio
in static on-condition

k

= IL / I

ILIS

4.4.7 Maximum analog
sense current, sense
current in fault
condition

4.4.8 Isense leakage current I

4.4.9 Isense leakage current,
active high side switch

IS

V
V

V
V

V
V

I

I

k

I

I

INH(H)

IN(H)

INH(L)

IN(L)

INHHY

INHY

INH(H)

IN(H)

INH(L)

IN(L)

ILIS

IS(lim)

ISL

ISH

– 1.75

2.152V –

1.6

1.1 1.4 – V –

––350

mV –

200––

– 30 150 µA VIN = V

– 25 125 µA VIN = V

3

10

4.2

6

7.8

3.6

6

8.4

2.4

6

9.6

R

= 1 kΩ

IS

I

= 15 A

L

I

= 8 A

L

I

= 3 A

L

INH

INH

4 5 7 mA VS = 13.5 V

R

= 1kΩ

IS

– – 1 µA VIN= 0 V or

V

= 0 V

INH

– 1 200 µA VIN = V

I

L

INH

= 0 A

= 5.3 V

=0.4 V

= 5 V

Data Sheet 20 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Thermal Characteristics

5 Thermal Characteristics

Pos Parameter Symbol Limits Unit Test Condition

min max

5.0.1 Thermal Resistance

Junction-Case, Low Side Switch

R

thjc(LS)

= ∆T

j(LS)

/ P

v(LS)

5.0.2 Thermal Resistance

Junction-Case, High Side Switch

R

thjc(HS)

= ∆T

j(HS)

/ P

v(HS)

5.0.3 Thermal Resistance

Junction-Case, both Switches

R

(P

thjc

v(HS)

= max[∆T

+ P

v(LS)

j(HS)

)

, ∆T

j(LS)

] /

5.0.4 Thermal Resistance

Junction-Ambient

Note: Thermal characteristics are not subject to production test - specified by design.

R

thjc(LS)

R

thjc(HS)

R

thjc

R

thja

– 4.8 K/W

– 1.6 K/W

– 2.4 K/W

– 50 K/W 6cm2 cooling

area

Data Sheet 21 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

6 Application

6.1 Application Example

Microcontroller Reverse Polarity

µC

I/O I/O I/O I/O I/O

I/O

Reset

Vdd

Vss

BTS 7930B

INH

IN

IS

SR

VS

OUT

GND

High Current H-Bridge

Voltage Regulator

WO

RO
Q
D

TLE

4278G

GND

M

I

VS

OUT

GND

Protection

BTS 7930B

INH

IN

IS

SR

SPD

50P03L

Application

V

S

Figure 11 Application Example: H-Bridge with two BTS 7930B

6.2 Layout Considerations

Due to the fast switching times for high currents, special care has to be taken to the PCB
layout. Stray inductances have to be minimized in the power bridge design as it is
necessary in all switched high power bridges. The BTS
power ground and logic ground. Therefore it is recommended to assure that the offset
between the ground connection of the slew rate resistor, the current sense resistor and
ground pin of the device (GND / pin

1) is minimized. If the BTS 7930B is used in a H­bridge or B6 bridge design, the voltage offset between the GND pins of the different
devices should be small as well.

A ceramic capacitor from VS to GND close to each device is recommended to provide
current for the switching phase via a low inductance path and therefore reducing noise
and ground bounce. A reasonable value for this capacitor would be about 470 nF.

The digital inputs need to be protected from excess currents (e.g. caused by induced
voltage spikes) by series resistors in the range of 10 kΩ.

Data Sheet 22 Rev. 2.0, 2006-06-01

7930B has no separate pin for

High Current PN Half Bridge

Y

BTS 7930B

7 Package Outlines P-TO-263-7

P-TO-263-7

(Plastic Transistor Single Outline Package)

9.9

7.5

6.6

3

.
0
±

1

2

5

.

1

0

.

)

±

0

9

±

.

2

.

2

4

.

9

1

0

(

1

17

A

5

.
6

0...0.1 5

+0.1

7 x 0. 6

-0.03

6 x 1.27

0.25MAB

1) Shear and punch direction no burrs this surf ace
Back side, heatsink contour
All metal sufaces tin plated, except area of c ut .

Package Outlines P-TO-263-7

4.4

+0.1

1.3

-0.02

B

0.05

5

.

1)

0

5

.

±

0
±

7

0.1

.

7

4

.
2

2.4

0

±

.

0

5

.

1

0.1

5

B

8

°

M

A

X

.

Footprint

5
1

.
6
1

6

.
4

10.8

4

.
9

0.47

0.8

8.42

HLGF1019

ou can find all of our packages, sorts of packing and others in our

Infineon Internet Page “Products”: http://www.infineon.com/products.

SMD = Surface Mounted Device

Data Sheet 23 Rev. 2.0, 2006-06-01

Dimensions in mm

High Current PN Half Bridge

BTS 7930B

8 Revision History

Version Date Changes / Comments

Rev. 1.0 2005-08-03 Preliminary Data Sheet

Rev. 1.1 2006-04-26 Preliminary Data Sheet

• Layout changes (new Infineon logo, ordering code
removed)

• Operating range extended (page 7)

• Switching times adjusted (page 11/12)

• Rth values corrected (page 21)

• Application drawing updated

Rev. 2.0 2006-06-01 Data Sheet

• Figure 7 (page 14) updated

Revision History

Data Sheet 24 2006-06-01

High Current PN Half Bridge

BTS 7930B

Revision History

Data Sheet 25 Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Edition 2006-06-01

Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany

© Infineon Technologies AG 6/21/06.

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.

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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Data Sheet 26 2006-06-01

http://www.infineon.com

Published by Infineon Technologies AG