Datasheet BTS 724G Datasheet (lnfineon)

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BTS 724G

Smart High-Side Power Switch

Four Channels: 4 x 90mΩ

Status Feedback

Product Summary Package

Operating Voltage V

Active channels one four parallel
On-state Resistance R
Nominal load current I
Current limitation I

General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and

diagnostic feedback, monolithically integrated in Smart SIPMOS

• Providing embedded protective functions

5.5...40V

bb

90mΩ 22.5mΩ

ON

3.3A 7.3A

L(NOM)

12A 12A

L(SCr)



technology.

P-DSO-20

Applications

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads

• All types of resistive, inductive and capacitve loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

• Very low standby current

• CMOS compatible input

• Improved electromagnetic compatibility (EMC)

• Fast demagnetization of inductive loads

• Stable behaviour at undervoltage

• Wide operating voltage range

• Logic ground independent from load ground

Protection Functions Block Diagram

• Short circuit protection

• Overload protection

• Current limitation

• Thermal shutdown

• Overvoltage protection (including load dump) with external

resistor

• Reverse battery protection with external resistor

• Loss of ground and loss of V

protection

bb

• Electrostatic discharge protection (ESD)

Diagnostic Function

• Diagnostic feedback with open drain output

• Open load detection in OFF-state

• Feedback of thermal shutdown in ON-state

IN1

ST1/2

IN2

IN3

ST3/4

IN4

Vbb

Logic
Channel 1
Channel 2

Logic
Channel 3
Channel 4

GND

Load 4

Load 1

Load 2

Load 3

Infineon Technologies AG 1 of 14 2003-Oct-01

BTS 724G

p

g

Functional diagram

IN1

. channel 1

ST1/2

IN2

GND1/2

IN3

ST3/4

IN4

GND3/4

overvoltage

rotection

internal

e supply

volta

ESD

logic

gate

control

+

charge

pump

temperature

sensor

Open load

detection

control and protection circuit

of

channel 2

control and protection circuit

of

channel 3

control and protection circuit

of

channel 4

current limit

clamp for

inductive load

reverse

battery

protection

VBB

OUT1

LOAD

OUT2

OUT3

OUT4

Infineon Technologies AG 2 of 14 2003-Oct-01

BTS 724G

Pin Definitions and Functions

Pin Symbol Function

1,10,
11,12,
15,16,
19,20
3 IN1
5 IN2
7 IN3
9 IN4
18 OUT1
17 OUT2
14 OUT3
13 OUT4
4 ST1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4
8 ST3/4 open drain, low on failure
2 GND1/2 Ground of chip 1 (channel 1,2)
6 GND3/4 Ground of chip 2 (channel 3,4)

V

Positive power supply voltage. Design the

bb

wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance

Input 1,2,3,4 activates channel 1,2,3,4 in case

of logic high signal

Output 1,2,3,4 protected high-side power output

of channel 1,2,3,4. Design the wiring for the
max. short circuit current

Pin configuration

(top view)

V

1 • 20 V

bb

GND1/2 2 19 Vbb

IN1 3 18 OUT1

ST1/2 4 17 OUT2

IN2 5 16 Vbb

GND3/4 6 15 Vbb

IN3 7 14 OUT3

ST3/4 8 13 OUT4

IN4 9 12 Vbb
Vbb 10 11 Vbb

bb

Infineon Technologies AG 3 of 14 2003-Oct-01

BTS 724G
Maximum Ratings at T

= 25°C unless otherwise specified

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

Vbb 36 V

Load current (Short-circuit current, see page 6) IL self-limited A

3

Load dump protection1) V

2)

R

= 2 Ω, td = 400 ms; IN = low or high,

I

LoadDump

= VA + Vs, VA = 13.5 V

V

Load dump

)

60 V

each channel loaded with RL = 13.5 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)4) Ta = 25°C:
(all channels active)

T

= 85°C:

a

Maximal switchable inductance, single pulse
V

= 12V, T

bb

= 150°C4), see diagrams on page 10

j,start

IL = 3.3 A, EAS = 120 mJ, 0 Ω one channel:
IL = 4.7 A, E
IL = 7.3 A, E

= 140 mJ, 0 Ω two parallel channels:

AS

= 160 mJ, 0 Ω four parallel channels:

AS

Electrostatic discharge capability (ESD) IN:

Tj
T

stg

P

3.6

tot

ZL

V

1.0

ESD

(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5kΩ; C=100pF

Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC)
Pulsed current through input pin
Current through status pin (DC)

5)

I
I
I

IN
INp
ST

-40 ...+150

°C

-55 ...+150
W

1.9

16,5

mH
19
18

kV

4.0

8.0

±0.3

mA

±5.0
±5.0

1)

Supply voltages higher than V

resistor for the GND connection is recommended.

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 14

5)

only for testing

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins (a 150Ω

bb(AZ)

2

(one layer, 70µm thick) copper area for Vbb

Infineon Technologies AG 4 of 14 2003-Oct-01

BTS 724G
Thermal Characteristics

Parameter and Conditions Symbol Values Unit

Thermal resistance
junction - soldering point

6)7)

each channel: R
junction – ambient6)
@ 6 cm2 cooling area one channel active:
all channels active:

min typ max

R

thjs
thja

-- -- 15

--

--

42
34

--

--

K/W

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

min typ max

On-state resistance (Vbb to OUT); I

= 2 A

L

each channel, Tj = 25°C:

T

= 150°C:

j

two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:

see diagram, page 11

Nominal load current one channel active:

two parallel channels active:
four parallel channels active:

Device on PCB
Output current while GND disconnected or pulled up

V

= 32 V, V

bb

see diagram page 9

Turn-on time9) IN to 90% V
Turn-off time IN to 10% V

6)

, Ta = 85°C, Tj ≤ 150°C

= 0,

IN

8)

OUT
OUT

RL = 12 Ω
Slew rate on 9) 10 to 30% V
Slew rate off 9) 70 to 40% V

, R

OUT
OUT

= 12 Ω: dV/dton 0.2 -- 1.0 V/µs

L

, RL = 12 Ω: -dV/dt

:
:

;

RON

I

I

ton
t

3.0

L(NOM)

L(GNDhigh)

off

-- -- 2 mA

0.2 -- 1.1 V/µs

off

--

--

--

--

4.3

6.5

--

--

70

140

35

17.5

3.3

4.7

7.3

100
100

90

mΩ

180

45

22.5

--

A

--

--

250

µs

270

6)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 14

7)

Soldering point: upper side of solder edge of device pin 15. See page 14

8)

not subject to production test, specified by design

9)

See timing diagram on page 12.

2

(one layer, 70µm thick) copper area for Vbb

Infineon Technologies AG 5 of 14 2003-Oct-01

BTS 724G

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified

Operating Parameters

min typ max

Operating voltage V
Undervoltage switch off

10)

Tj =-40°C...25°C: V

Tj =125°C: -- -- 4.5
Overvoltage protection

I

= 40 mA

bb

Standby current
V

= 0; see diagram page 11 T

IN

13)

12)

Tj =-40°C...25°C:

=150°C:

j

V
I

Tj =125°C: -- -- 20
Off-State output current (included in I

V

= 0; each channel

IN

Operating current
I

= I

GND

all channels on:

GND1

Protection Functions

Current limit, V

14)

, V

= 5V,

IN

+ I

, one channel on:

GND2

15)

= 0V, (see timing diagrams, page 12)

out

)

bb(off)

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

I

I

I

5.5 -- 40 V

bb(on)

-- -- 4.5 V

bb(u so)

11)

41 47 52 V

bb(AZ)

--

bb(off)

--

-- 1 5 µA

L(off)

GND

--

--

--

L(lim)

-­9

9

--

0.6

2.4

--

15

--

20
30

11)

1.2

4.8

23

µA

mA

A

--

--

Repetitive short circuit current limit,

Tj = Tjt each channel
two,three or four parallel channels

(see timing diagrams, page 12)

Initial short circuit shutdown time T

V

= 0V (see timing diagrams on page 12)

out

Output clamp (inductive load switch off)

at V

ON(CL)

= Vbb - V

, IL= 40 mA

OUT

j,start

16)

=25°C:

I

--

L(SCr)

t
V

-- 2 -- ms

off(SC)

41 47 52 V

ON(CL)

--

12
12

--

A

--

Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis

∆

Tjt -- 10 -- K

10)

is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)

11)

not subject to production test, specified by design

12)

Supply voltages higher than V
resistor for the GND connection is recommended). See also V
circuit diagram on page 9.

13)

Measured with load; for the whole device; all channels off

14)

Add I

15)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.

16)

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

V

ST

ON(CL)

, if IST > 0

require an external current limit for the GND and status pins (a 150Ω

bb(AZ)

in table of protection functions and

ON(CL)

Infineon Technologies AG 6 of 14 2003-Oct-01

BTS 724G

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified

Reverse Battery

Reverse battery voltage
Drain-source diode voltage (V

= - 2.0 A, Tj = +150°C

IL

17)

-Vbb -- -- 32 V

)

> V

out

bb

Diagnostic Characteristics

min typ max

-VON -- 600 -- mV

Open load detection voltage V

Input and Status Feedback

18)

Input resistance

(see circuit page 9)
Input turn-on threshold voltage V
Input turn-off threshold voltage V

OUT(OL)1

RI 2.5 4.0 6.0 kΩ

IN(T+)
IN(T-)

Input threshold hysteresis ∆ V
Status change after positive input slope

19)

t

d(STon)

1.7 2.8 4.0 V

-- -- 2.5 V

1.0 -- -- V

-- 0.2 -- V

IN(T)

-- 10 20 µs
with open load
Status change after positive input slope

19)

t

d(STon)

30 -- -- µs
with overload
Status change after negative input slope

t

d(SToff)

-- -- 500 µs
with open load
Status change after negative input slope

19)

t

-- -- 20 µs

d(SToff)

with overtemperature
Off state input current VIN = 0.4 V: I
On state input current VIN = 5 V: I

5 -- 20 µA

IN(off)

10 35 60 µA

IN(on)

Status output (open drain)
Zener limit voltage IST = +1.6 mA:
ST low voltage IST = +1.6 mA:

V

ST(high)

V

ST(low)

5.4

--

--

--

0.6

--

V

17)

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).

18)

If ground resistors R

19)

not subject to production test, specified by design

are used, add the voltage drop across these resistors.

GND

Infineon Technologies AG 7 of 14 2003-Oct-01

BTS 724G

Truth Table

Channel 1 and 2 Chip 1
Channel 3 and 4

Chip 2

(equivalent to channel 1 and 2)

Normal operation

Open load Channel 1 (3) L

Overtemperature both channel L

Channel 2 (4) X

Channel 1 (3) L
Channel 2 (4) X

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

IN1 IN2 OUT1 OUT2 ST1/2
IN3 IN4 OUT3 OUT4 ST3/4

L
L
H
H

H

X

X
H

H

X

L

H

L

H

X
X

L

H

L

H

X
X
X
L

H

L
L
H
H
Z
H

X
X

L
L
L
L
L
X
X

L
H
L
H
X
X

Z
H

L
L
L
X
X
L
L

H
H
H
H

20)

L

H

15)

L

H
H
L
L
H
L
H
L

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

I

bb

V

bb

I

V

V

IN2

V

IN1

Leadframe (V
External R

I

IN1

3

I

ST1/2

ST1/2

GND

IN1

IN2

5

IN2

4

ST1/2

R

GND1/2

) is connected to pin 1,10,11,12,15,16,19,20

bb

optional; two resistors R

V

PROFET

Chip 1

GND1/2

2

Leadframe

bb

I

GND1/2

OUT1

OUT2

battery protection up to the max. operating voltage.

18

17

V

ON2

I

I

V

V

OUT2

GND1

V

ON1

L1

L2

OUT1

, R

I

IN3

7

I

IN4

9

I

ST3/4

V

V

IN3

IN4

= 150 Ω or a single resistor R

GND2

V

ST3/4

8

IN3

IN4

ST3/4

R

GND3/4

V

PROFET

Chip 2

GND3/4

6

Leadframe

bb

I

GND3/4

V

ON4

I

14

OUT3

I

13

OUT4

V

V

OUT4

= 75 Ω for reverse

GND

V

ON3

L3

L4

OUT3

20)

L, if potential at the Output exceeds the OpenLoad detection voltage

Infineon Technologies AG 8 of 14 2003-Oct-01

BTS 724G

Input circuit (ESD protection), IN1 to IN4

R

IN

I

ESD-ZD

I

GND

I

I

The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.

Status output, ST1/2 or ST3/4

R

ST(ON)

GND

ESD-Zener diode: 6.1 V typ., max 0.3 mA; R
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.

ESD­ZD

+5V

ST

ST(ON)

< 375 Ω

Overvolt. and reverse batt. protection

+ 5V

R

ST

R

I

IN

Logic

ST

R

ST

V

Z1

= 6.1 V typ., VZ2 = 47 V typ., R

V

Z1

R

= 15 kΩ, RI= 3.5 kΩ typ.

ST

R

Signal GND

GND

V

Z2

GND

GND

In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active

+ V

bb

OUT

R

Load

Load GND

= 150 Ω,

Open-load detection, OUT1...4

OFF-state diagnostic condition:
Open Load, if V

> 3 V typ.; IN low

OUT

V

bb

Inductive and overvoltage output clamp,

OUT1...4

VON clamped to V

V

ON(CL)

Z

= 47 V typ.

Power GND

+V

V

bb

ON

OUT

OFF

Logic

unit

GND disconnect

Open load

detection

IN

ST

VbbV

IN

V

ST

Signal GND

V

bb

PROFET

GND

V

GND

OUT

R

EXT

V

OUT

Any kind of load. In case of IN = high is V
Due to V

GND

> 0, no V

= low signal available.

ST

OUT

≈ V

IN

- V

IN(T+)

Infineon Technologies AG 9 of 14 2003-Oct-01

.

BTS 724G

GND disconnect with GND pull up

V

PROFET

GND

> V

IN

bb

V

- V

OUT

GND

device stays off

IN(T+)

V

V

bb

V

IN

Any kind of load. If V
Due to V

> 0, no VST = low signal available.

GND

IN

ST

ST

GND

Vbb disconnect with energized inductive
load

high

V

bb

IN

ST

For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb dis­connection with energized inductive load all the load current
flows through the GND connection.

V

bb

PROFET

GND

OUT

Inductive load switch-off energy
dissipation

E

bb

E

AS

E

V

IN

=

ST

bb

PROFET

GND

OUT

L

Z

L

{

R

E

E

L

Energy stored in load inductance:

·L·I

2

2
L

1

/

=

E

L

While demagnetizing load inductance, the energy
dissipated in PROFET is

= Ebb + EL - ER= V

E

AS

ON(CL)·iL

with an approximate solution for RL > 0

· L

I

AS

=

L

(V

+ |V

OUT(CL)

bb

·R

2

L

|) ln (1+

E

Ω:

|V

(t) dt,

·R

I

L

L

OUT(CL)

)

|

Maximum allowable load inductance for
a single switch off (one channel)

L = f (I

L

ZL [mH]

1000

); T

j,start

150°C, V

=

bb

4)

= 12 V, RL = 0 Ω

Load

L

R

100

10

1

1234567891011

I

L

[A]

Infineon Technologies AG 10 of 14 2003-Oct-01

BTS 724G

Typ. on-state resistance

R

= f (Vbb,T

ON

R

[mOhm]

ON

); IL = 2 A, IN = high

j

160

Tj = 150°C

120

80

25°C

-40°C

40

0

5 7 9 11 30 40

V

bb

[V]

Typ. standby current

I

= f (T

bb(off)

[µA]

I

bb(off)

45

j

); V

= 9...34 V, IN1,2,3,4 = low

bb

40

35

30

25

20

15

10

5

0

-50 0 50 100 150 200

T

[°C]

j

Infineon Technologies AG 11 of 14 2003-Oct-01

BTS 724G

Timing diagrams

All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4

Figure 1a: Vbb turn on:

IN1

IN2

Figure 2b: Switching a lamp:

IN

V

bb

V

OUT1

V

OUT2

ST1 open drain

ST2 open drain

Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:

IN

ST

V

OUT

I

L

t

Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling

IN1

other channel: normal operation

t

V

OUT

I

90%

t

on

dV/dton

dV/dtoff

t

off

L1

I

L(lim)

I

L(SCr)

10%

t

I

L

ST

off(SC)

t

t

Heating up of the chip may require several millisec onds, depending
on external conditions

Infineon Technologies AG 12 of 14 2003-Oct-01

BTS 724G

IN1

Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)

IN1/2

I + I

L1 L2

2xI

L(lim)

I

L(SCr)

t

off(SC)

ST1/2

ST1 and ST2 have to be configured as a ' Wi red OR' function
ST1/2 with a single pull-up res i stor.

Figure 4a: Overtemperature:
Reset if T

<Tjt

j

Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Open load of channel 1; other channels normal
operation

IN1

V

OUT1

I

L1

ST

10µs

t

500µs

Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation

IN

ST

ST

30µs 20µs

V

OUT

T

J

t

Infineon Technologies AG 13 of 14 2003-Oct-01

BTS 724G

Package and Ordering Code

Standard: P-DSO-20-15

Sales Code BTS 724G

Ordering Code Q67060-S7026

All dimensions in millimetres

Definition of soldering point with temperature T
upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer
70µm, 6cm
max. power dissipation P
I

L(NOM)

2

active heatsink area) as a reference for

, nominal load current

and thermal resistance R

tot

thja

:

s

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!

The information herein is given t o describe certain components and
shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited
to warranties of non-infringement , regardi ng circuits, descripti ons
and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technol ogy, delivery terms and conditi ons
and prices please contact your nearest Infineon Technologies Offi ce
in Germany or our Infineon Technologies Representatives worldwide
(see address list).

Warnings

Due to technical requirements components may contain dangerous
substances. For inform ation on the types in question please contact
your nearest Infineon Technologies Office.

Infineon Technologies Components m ay only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be
expected to cause the f ai l ure of that life-support device or system, or
to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the
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protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons m ay be endangered.

Infineon Technologies AG 14 of 14 2003-Oct-01