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Smart Power High-Side-Switch
Eight Channels: 8 x 200 mΩ
BTS 4880 R
Features
• Output current 0,625 A per channel
• Short circuit protection
• Maximum current internally limited
• Overload protection
• Input protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Thermal shutdown with restart
• Thermal independence of separate channels
• ESD - Protection
• Loss of GND and loss of V
• Very low standby current
protection
bb
Product Summary
Overvoltage protection V
Operating voltage V
On-state resistance R
bb(AZ
bb(on
ON
47 V
11...45 V
200 mΩ
P-DSO-36-12; -10
• Reverse battery protection
• Programmable input for CMOS or V
• Common diagnostic output ( current output )
for overtemperature
bb
/2
Application
• Output driver for industrial applications ( PLC )
• All types of resistive, inductive and capacitive loads
• µC or optocoupler compatible power switch for 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2
compatible input and common diagnostic feedback, monolithically integrated in
Smart SIPMOS technology. Providing embedded protective functions.
Page 1
2004-01-27
Block Diagram
DIAG
BTS 4880 R
V
bb
LS
IN1
IN2
IN3
IN4
Input
Le ve l S hifte r
Logic
each
channel
Logic
each channel
R
IN
ESD
Common
Diagnostic
Logic
each
channel
Logic
Logic
each
channel
Charge pump
Level shifter
Rectifier
Channel 2...7
Undervoltage
shutdown
with restart
Current
limit
unclamped
Voltage
source
protection
Limit for
ind. loads
Gate
Overvoltage
protection
Temperature
sensor
OUT1
OUT2
OUT3
OUT4
OUT5
IN5
IN6
IN7
IN8
OUT6
OUT7
Current
limit
Charge pump
Le vel shifter
Rectifier
ESD
R
IN
Logic
GND
Signal GND
Limit for
unclamped
ind. loads
Gate
protection
Temperature
sensor
miniPROFET
OUT8
Page 2
2004-01-27
Pin Symbol Function
BTS 4880 R
1,2,4,5
3
6
7
8
9
10
11
12
13
14-18
19
20
21
22
NC
LS
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
GND
DIAG
OUT8
OUT8
not connected
Enable pin for switching the input-levels to Vbb/2
Input, activates channel 1 in case of logic high signal
Input, activates channel 2 in case of logic high signal
Input, activates channel 3 in case of logic high signal
Input, activates channel 4 in case of logic high signal
Input, activates channel 5 in case of logic high signal
Input, activates channel 6 in case of logic high signal
Input, activates channel 7 in case of logic high signal
Input, activates channel 8 in case of logic high signal
not connected
Logic ground
Common diagnostic output for overtemperature
High-side output of channel 8
High-side output of channel 8
23
24
25
26
27
28
29
30
31
32
33
34
35
36
TAB
OUT7
OUT7
OUT6
OUT6
OUT5
OUT5
OUT4
OUT4
OUT3
OUT3
OUT2
OUT2
OUT1
OUT1
Vbb
High-side output of channel 7
High-side output of channel 7
High-side output of channel 6
High-side output of channel 6
High-side output of channel 5
High-side output of channel 5
High-side output of channel 4
High-side output of channel 4
High-side output of channel 3
High-side output of channel 3
High-side output of channel 2
High-side output of channel 2
High-side output of channel 1
High-side output of channel 1
Positive power supply voltage
Page 3
2004-01-27
Maximum Ratings
BTS 4880 R
Parameter
Symbol Value Unit
at Tj = -40...135 °C, unless otherwise specified
Supply voltage V
Continuous input voltage
2)
V
Continuous voltage at LS-pin V
Load current (Short - circuit current, see page 6) I
Current through input pin (DC), each channel I
Reverse current through GND-pin
1)
-I
Operating temperature T
Storage temperature T
Power dissipation
3)
Inductive load switch-off energy dissipation
4)
P
E
single pulse, Tj = 125 °C, IL = 0.625 A
one channel active
all channels simultaneously active ( each channel )
bb
IN
LS
L
IN
GND
j
stg
tot
AS
-11)...45
-10...V
bb
-1...Vbb
self limited A
±5
1.6 A
internal limited
-55 ... +150
3.3 W
10
1
V
mA
°C
J
Load dump protection4) V
LoadDump
VIN= low or high
td = 400 ms, R
td = 350 ms, R
= 2 Ω, RL = 27 Ω, V
I
= 2 Ω, RL = 47 Ω, V
I
Electrostatic discharge voltage (Human Body Model)
5)
= VA + V
= 13.5 V
A
= 27 V
A
S
V
Loaddump
90
117
V
ESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin, LS pin, Common diagnostic pin
all other pins
Continuous reverse drain current
1
defined by P
2
At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
not subject to production test, specified by design
5
V
Loaddump
Supply voltages higher than V
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
tot
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
bb(AZ)
1)4)
, each channel I
require an external current limit for the GND pin, e.g. with a
S
±1
±5
4 A
V
kV
Page 4
2004-01-27
BTS 4880 R
)
)
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance junction - case
R
Thermal resistance @ min. footprint R
Thermal resistance @ 6 cm2 cooling area
1)
R
Load Switching Capabilities and Characteristics
On-state resistance
T
= 25 °C, IL = 0.5 A
j
T
= 125 °C
j
Turn-on time to 90% V
R
= 47 Ω, V
L
= 0 to 10 V
IN
Turn-off time to 10% V
R
= 47 Ω, V
L
= 10 to 0 V
IN
Slew rate on 10 to 30% V
R
= 47 Ω, V
L
= 15 V
bb
Slew rate off 70 to 40% V
R
= 47 Ω, V
L
= 15 V
bb
OUT
OUT
OUT
OUT
,
,
R
t
t
dV/dt
-dV/dt
thJC
th(JA
th(JA
ON
on
off
on
off
- - 1.5 K/W
- - 50
- - 38
-
-
- 50 100
150
270
200
320
mΩ
µs
- 75 150
- 1 2
V/µs
- 1 2
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 5
2004-01-27
BTS 4880 R
)
)
)
)
)
j
j
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified min. typ. max.
Operating Parameters
Operating voltage V
Undervoltage shutdown V
Undervoltage restart V
Undervoltage hysteresis
∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
∆V
Standby current I
Operating current
Leakage output current (included in I
1)
bb(off)
I
)
I
VIN = low , each channel
Protection Functions
Initial peak short circuit current limit
T
= -25 °C, Vbb = 30 V, tm = 700 µs
j
T
= 25 °C
j
T
= 125 °C
j
2)
I
bb(on
bb(under
bb(u rst
bb(under)
bb(off
GND
L(off)
L(SCp)
11 - 45 V
7 - 10.5
- - 11
- 0.5 -
- 50 150 µA
- 5 12 mA
- 5 10 µA
-
-
0.7
-
1.4
-
1.9
-
-
A
Repetitive short circuit current limit
I
L(SCr)
- 1.1 -
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off)
at V
Overvoltage protection
Thermal overload trip temperature
= Vbb - V
OUT
ON(CL)
,
3)
4)
Thermal hysteresis ∆T
1
contains all input currents
2
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3
see also V
4
higher operating temperature at normal function for each channel available
ON(CL)
in circuit diagram on page 10
V
ON(CL)
V
bb(AZ
T
t
t
47 53 60 V
47 - -
135 - - °C
- 10 - K
Page 6
2004-01-27
BTS 4880 R
)
)
)
/
)
)
)
)
)
)
)
)
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified min. typ. max.
Input
Continuous input voltage
Input turn-on threshold voltage CMOS
Input turn-off threshold voltage CMOS
Input turn-on threshold voltage Vbb/2
Input turn-off threshold voltage Vbb/2
1)
2)
2)
2)
2)
V
V
V
V
V
Input threshold hysteresis ∆V
Off state input current CMOS ( each channel ) I
On state input current CMOS ( each channel ) I
Off state input current Vbb/2 ( each channel ) I
On state input current Vbb/2 ( each channel ) I
Input delay time at switch on V
bb
IN(off
IN(on
IN(off
IN(on
t
d(Vbbon
Input resistance (see page 10) R
Internal pull down resistor at LS-pin
3)
R
IN
IN(T+
IN(T-
IN(T+
IN(T-
IN(T
I
LS
-10 -
Vbb
- - 2.2
0.8 - -
- - V
Vbb/2-1
- -
bb
2+1
- 0.3 -
8 - - µA
- - 70
80 - -
- - 260
150 340 -
2 3 4
300 800 -
V
µs
kΩ
Diagnostic Characteristics
Common diagnostic output current
4)
( overtemperature of any channel )
T
= 135 °C
j
Common diagnostic output leakage current I
1
At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
2
see page 9
3
LS-pin is connected to V
4
see page 10
bb
I
diag
diag(high
2 3 4 mA
- - 2 µA
Page 7
2004-01-27
BTS 4880 R
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified min. typ. max.
Reverse Battery
Reverse battery voltage1)
R
R
GND
GND
= 0 Ω
= 150 Ω
Diode forward on voltage
I
= 1.25 A, VIN = low , each channel
F
-V
-V
bb
ON
-
-
-
-
1
45
- - 1.2
V
1
defined by P
tot
Page 8
2004-01-27
Truth table for common diagnostic pin ( LED-driver ):
BTS 4880 R
Input
level
Normal
operation
Short circuit
to GND
Undervoltage L
Overtemperature L
L
H
L
H
H
H
Output
level
L
H
L
L
L
L
L
L
Diagnostic
L
L
L
L
L
L
L
H
L = no diagnostic output current
H = diagnostic output current typ. 2 mA (see page 7)
Programmable input:
1)
V
bb
GND
IN
LS
Logic
Input
Level Shifter
typ . 80 0 kΩ
Functional description LS-Pin:
With using the LS-pin it is possible to change the input turn-on and -off threshold voltage
between CMOS and half supply voltage level.
Therefore you have either to connect the LS-pin to GND ( state 1 ) or to supply voltage ( state 2 ).
If the LS-pin is not connected the input threshold voltages are automatically at CMOS level,
caused by an internal pull down to GND with typ. 800k
State 1: LS-Pin to GND CMOS - Input level
State 2: LS-Pin to supply voltage Vbb/2 - Input level
1
toggeling with restart
Ω ( see circuit ).
Page 9
2004-01-27
BTS 4880 R
Terms
each channel
I
bb
LS
I
IN
V
bb
V
IN
IN1...8
V
bb
PROFET
GND
DIAG
OUT1...8
I
GND
I
DIAG
Input circuit (ESD protection)
each channel
Vbb
R
IN
I
I
I
GND
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
Reverse battery protection
each channel
Inductive and overvoltage output clamp
each channel
+ V
bb
V
Z
V
V
V
ON
GND
OUT
I
L
ON
OUT
VON clamped to 47 V min.
Overvoltage protection of logic part
+ V
bb
V
IN
ST
VZ2=V
bb(AZ)
R
=3 kΩ typ., R
I
Logic
=47 V min.,
=150Ω
GND
Z2
GND
R
GND
optional
Signal GND
R
IN
R
=150Ω, RI=3kΩ typ.,
GND
I
Logic
Signal GN D
GND
R
GND
optional
Power
In ve rs e
Diode
Power GND
Temperature protection is not active during
inverse current
R
V
-
OUT
L
bb
Common diagnostic output
Vbb
Logic
DIA G
ESD
Output current typ. 2 mA
Page 10
2004-01-27
BTS 4880 R
GND disconnect
DIAG
V
bb
PROFET
GND
V
GND
VbbV
LS
IN1...8 OUT1...8
IN
GND disconnect with GND pull up
LS
IN1...8
V
bb
V
IN
V
PROFET
ST
V
bb
GND
V
DI AG
OUT1...8
GND
Inductive Load switch-off energy
dissipation, each channel
E
bb
E
AS
V
bb
IN
PROFET
=
GND
OUT
L
Z
L
{
R
Energy stored in load inductance: EL = ½ * L * I
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
E
= Ebb + EL - E
AS
with an approximate solution for R
= V
R
ON(CL)
* iL(t) dt,
> 0Ω:
L
IL
*
E
L
AS
=+ +
*
2
VV
*( | )*ln(
L
bb O UT CL
R
()|
1
E
E
E
L
L
IR
LL
V
||
OUT CL
Load
L
R
2
*
()
)
Vbb disconnect with charged inductive
load
V
high
bb
IN1...8
LS
PROFET
GND
DIAG
V
bb
OUT1...8
Page 11
2004-01-27
BTS 4880 R
Typ. on-state resistance
R
= f(Tj) ; V
ON
0.3
Ω
0.2
ON
R
0.15
0.1
0.05
0
-25 0 25 50 75
= 15V ; V
bb
= high
in
°C
Typ. on-state resistance
R
= f(Vbb); IL = 0.5A ; V
ON
0.3
125°C
Ω
0.2
ON
R
0.15
0.1
0.05
125
T
j
0
10 15 20 25 30 35 40
25°C
-25°C
= high
in
50
V
V
bb
Typ. initial peak short circuit current limit
I
L(SCp)
= f(Tj) ; V
2
bb
= 24V
A
1.6
1.4
L(SCp)
I
1.2
1
0.8
0.6
0.4
0.2
0
-25 0 25 50 75
°C
125
T
j
Typ. input delay time at switch on V
t
d(Vbbon)
ms
d(Vbbon)
t
= f(Vbb); Tj = -25...125 °C
0.5
0.3
0.2
0.1
0
10 15 20 25 30 35 40
V
bb
50
V
bb
Page 12
2004-01-27
BTS 4880 R
Typ. turn on time
t
= f(Tj); R
on
100
µs
80
70
on
t
60
50
40
30
20
10
0
-25 0 25 50 75
= 47Ω
L
°C
Typ. turn off time
t
= f(Tj); R
off
100
µs
80
70
off
t
60
50
40
30
20
10
125
T
j
0
-25 0 25 50 75
= 47Ω
L
°C
125
T
j
Typ. slew rate on
dV/dt
dV
= f(Tj) ; R
on
1
V/s
on
dt
0.6
0.4
0.2
0
-25 0 25 50 75
= 47 Ω, V
L
= 15 V
bb
°C
Typ. slew rate off
dV/dt
-dV
125
T
j
= f(Tj); R
off
1.4
= 47 Ω, V
L
V/s
off
1
dt
0.8
0.6
0.4
0.2
0
-25 0 25 50 75
= 15 V
bb
°C
125
T
j
Page 13
2004-01-27
BTS 4880 R
Typ. standby current
I
bb(off)
= f(Tj) ; V
50
= 30V ; V
bb
µA
bb(off)
I
30
20
10
0
-25 0 25 50 75
IN
= low
°C
Typ. leakage current
I
= f(Tj) ; Vbb = 30V ; VIN = low
L(off)
4
µA
3
L(off)
2.5
I
2
1.5
1
0.5
0
125
T
j
-25 0 25 50 75
°C
125
T
j
Typ. common diagnostic output current
I
= f(Vbb) ; Tj = 135°C
diag
3
mA
diag
I
2.8
2.7
2.6
2.5
10 15 20 25 30 35
45
V
V
bb
Typ. internal pull down resistor at LS-pin
R
= f(Vbb); VLS = V
LS
1.5
MΩ
1
LS
R
0.75
0.5
0.25
0
10 15 20 25 30 35 40
bb
125°C
25°C
-25°C
50
V
V
bb
Page 14
2004-01-27
BTS 4880 R
Typ. input current @ CMOS level
I
IN(on/off)
V
INlow
µA
IN
I
= f(Tj); V
≤ 0,8V; V
50
30
20
10
0
-25 0 25 50 75
INhigh
= 15V; V
bb
= 2,2V
on
off
= low/high
IN
°C
Typ. input current @ CMOS level
IIN = f(VIN); V
50
-25°C
µA
IN
I
30
20
10
125
T
j
0
0 2.5 5 7.5 10
bb
25°C
125°C
= 15V
V
15
V
IN
Typ. input current @ Vbb/2 level
I
IN(on/off)
µA
IN
I
= f(Tj); V
180
140
120
100
80
60
40
20
0
-25 0 25 50 75
= 30V; V
bb
off
on
= low/high
IN
°C
Typ. input current @ Vbb/2 level
IIN = f(VIN); V
200
µA
150
IN
125
I
100
75
50
25
125
T
j
0
0 5 10 15 20
bb
= 30 V
-25°C
25°C
125°C
V
30
V
IN
Page 15
2004-01-27
BTS 4880 R
Typ. input threshold voltage
@ CMOS level
V
IN(th)
= f(Tj) ; V
2
bb
= 15V
V
1.6
1.4
IN(th)
V
1.2
1
0.8
0.6
0.4
0.2
0
-25 0 25 50 75
on
off
°C
Typ. input threshold voltage
@ CMOS level
V
125
T
j
= f(Vbb) ; Tj = 25°C
IN(th)
2
V
1.5
IN(th)
1.25
V
1
0.75
0.5
0.25
0
10 15 20 25 30 35 40
off
on
50
V
V
bb
Typ. input threshold voltage
@ Vbb/2 level
V
IN(th)
16
= f(Tj) ; V
bb
= 30V
V
15
off
IN(th)
14.5
V
14
13.5
13
12.5
12
-25 0 25 50 75
on
°C
Typ. input threshold voltage
@ Vbb/2 level: LS-pin connected to V
V
125
T
j
= f(Vbb) ; Tj = 25°C
IN(th)
25
V
20
IN(th)
17.5
V
15
12.5
10
7.5
5
10 15 20 25 30 35 40
on
off
bb
50
V
V
bb
Page 16
2004-01-27
BTS 4880 R
Maximum allowable load inductance
for a single switch off, calculated
L = f(IL); T
45
H
35
30
L
25
20
15
10
5
0
200 300 400 500 600
=125°C, Vbb=24V, R
jstart
all channels simultaneously active
L
mA
=0Ω
I
L
800
Maximum allowable inductive switch-off
energy, single pulse
EAS = f(IL); T
3.5
J
2.5
AS
E
2
1.5
1
0.5
0
200 300 400 500 600
= 125°C, Vbb = 24V
jstart
all channels simultaneously active
mA
800
I
L
Typ. transient thermal impedance
Z
=f(tp) @ min. footprint
thJA
Parameter: D=tp/T
2
10
K/W
thJA
Z
10
10
10
10
1
0
-1
-2
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0
-7
-6
10
10
-5
-4
-3
-2
10
10
10
-1
10
10 0 10 1 10
Typ. transient thermal impedance
Z
=f(tp) @ 6cm2 heatsink area
thJA
Parameter: D=tp/T
2
10
K/W
D = 0.5
1
D = 0.2
10
D = 0.1
thJA
Z
2
t
p
4
10
s
10
10
10
0
-1
-2
10
D = 0.05
D = 0.02
D = 0.01
D = 0
-7
-6
10
10
-5
-4
-3
-2
10
10
10
-1
10
10 0 10 1 10
2
t
4
10
s
p
Page 17
2004-01-27
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching a lamp
BTS 4880 R
IN
V
bb
I
L
DIAG
t
d(Vbbon)
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
IN
V
OUT
I
L
t
DIAG
Figure 2c: Switching an inductive load
IN
V
OUT
90%
10%
I
DIAG
IN
V
OUT
t
on
d V /d to n
L
t
off
dV/dtoff
I
L
t
DIAG
Page 18
2004-01-27
BTS 4880 R
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
IN
V
OUT
O u tput sh ort to G N D
I
L
DIAG
I
L(SCp)
I
L(SCr)
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 4: Overtemperature:
Reset if Tj < T
jt
Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling
IN
V
OUT
normal
operation
I
L
DIAG
t
O u tp ut sh o rt to G N D
I
L(SCr)
t
Figure 5: Undervoltage shutdown and restart
IN
V
OUT
T
J
DIAG
IN
V
bb
10,5V
V
out
DIAG
t
t
t
d(Vbbon)
Page 19
2004-01-27
Package and ordering code
all dimensions in mm
Ordering code:
BTS 4880 R Q67060-S7020
1)
±0.1
A
Index Marking
0.1
36 19
15.9
±0.1
15.74
(Heatslug)
13.7
-0.2
CODE
±0.1
1.1
±0.1
3.2
±0.1
5.9
1.3
C
3.5 max.
+0.1
Seating Plane
0
0.1 C
11
14.2
36x
±0.15
2.8
6.3
0.95
±0.3
1)
±0.15
B
+0.07
-0.02
0.25
0.25
B
±0.3˚
5˚
BTS 4880 R
118
1 × 45˚
1)
Does not include plastic or metal protrusion of 0.15 max. per side
0.65
17 × 0.65 11.05=
0.25
+0.13
0.25
M
BAC
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Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your
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(see address list).
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Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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Page 20
2004-01-27
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