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Smart Power High-Side-Switch
BTS 462 T
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection
with external resistor
• CMOS compatible input
• Loss of GND and loss of V
protection
bb
• ESD - Protection
• Very low standby current
Product Summary
Overvoltage protection V
Operating voltage V
On-state resistance R
Nominal load current I
bb(AZ
bb(on
ON
L(ISO
41 V
5...34 V
100 mΩ
3.5 A
P-TO252-5-11
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2004-01-27
Block Diagram
IN
ESD
Voltage
source
V
Logic
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
Current
limit
Gate
protection
Limit for
unclamped
ind. loads
Temperature
sensor
+ V
BTS 462 T
bb
OUT
Load
GND
Signal GND
miniPROFET
Pin Symbol Function
1
2
3
4
5
GND Logic ground
IN Input, activates the power switch in case of logic high signal
Vbb Positive power supply voltage
NC not connected
OUT Output to the load
TAB Vbb Positive power supply voltage
Pin configuration
Top view
Load GND
Tab = V
BB
1 2 (3) 4 5
GND IN NC OUT
Page 2
2004-01-27
BTS 462 T
)
)
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Supply voltage V
Supply voltage for full short circuit protection
T
= -40...+150 °C
j
V
Continuous input voltage V
Load current (Short - circuit current, see page 5) I
Current through input pin (DC) I
Operating temperature T
Storage temperature T
Power dissipation
1)
Inductive load switch-off energy dissipation
1)2)
P
E
single pulse, (see page 8)
Tj =150 °C, Vbb = 13.5 V, IL = 1 A
Load dump protection2) V
R
=2Ω, t
I
R
= 13.5 Ω
L
=400ms, VIN= low or high, VA=13,5V
d
LoadDump
3)
= VA + V
V
S
bb
bb(SC)
IN
L
IN
j
stg
tot
AS
Loaddump
40 V
32
-10 ... +16
self limited A
± 5
-40 ...+150
-55 ... +150
41.6 W
4.4 J
75
mA
°C
V
Electrostatic discharge voltage (Human Body Model)
V
ESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
Thermal Characteristics
junction - case:
Thermal resistance @ min. footprint R
Thermal resistance @ 6 cm2 cooling area
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
not subject to production test, specified by design
3
V
Loaddump
Supply voltages higher than V
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
require an external current limit for the GND pin, e.g. with a
bb(AZ)
1)
R
R
thJC
th(JA
th(JA
- - 3 K/W
- 80 - K/W
- 45 60
kV
± 1
± 5
Page 3
2004-01-27
BTS 462 T
j
)
p)
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
= -40...+150°C, V
= 13,5V, unless otherwise specified min. typ. max.
bb
Load Switching Capabilities and Characteristics
On-state resistance
T
= 25 °C, IL = 2 A, Vbb = 9...40 V
j
T
= 150 °C
j
Nominal load current; Device on PCB 1)
T
= 85 °C, VON = 0.5 V
C
Turn-on time to 90% V
R
= 47 Ω
L
Turn-off time to 10% V
R
= 47 Ω
L
Slew rate on 10 to 30% V
R
= 47 Ω
L
Slew rate off 70 to 40% V
R
= 47 Ω
L
OUT
OUT
OUT
OUT
,
,
Operating Parameters
R
ON
I
L(ISO)
t
on
t
off
dV/dt
-dV/dt
on
off
-
-
70
140
100
200
mΩ
3.5 4.4 - A
- 90 170
µs
- 90 230
- 0.8 1.7
V/µs
- 0.8 1.7
Operating voltage V
Undervoltage shutdown of charge pump
T
= -40...+85 °C
j
T
= 150 °C
j
Undervoltage restart of charge pump V
Standby current
T
= -40...+85 °C, VIN = 0 V
j
Tj = 150 °C2) , VIN = 0 V
Leakage output current (included in I
bb(off)
)
bb(on
V
bb(under)
bb(u c
I
bb(off)
I
L(off)
5 - 34 V
-
-
- 4 5.5
-
-
- - 5
VIN = 0 V
Operating current
I
GND
- 0.5 1.3 mA
VIN = 5 V
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
higher current due temperature sensor
-
-
-
-
4
5.5
10
15
µA
Page 4
2004-01-27
BTS 462 T
j
j
j
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
= -40...+150°C, V
Protection Functions
= 13,5V, unless otherwise specified min. typ. max.
bb
1)
Initial peak short circuit current limit (pin 3 to 5)
T
= -40 °C, Vbb = 20 V, tm = 150 µs
j
T
= 25 °C
j
T
= 150 °C
j
Repetitive short circuit current limit
I
L(SCp)
I
L(SCr)
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off)
at V
= Vbb - V
OUT
ON(CL)
,
V
Ibb = 4 mA
Overvoltage protection 2)
V
Ibb = 4 mA
Thermal overload trip temperature T
Thermal hysteresis ∆T
Reverse Battery
Reverse battery
Drain-source diode voltage (V
3)
> Vbb) -V
OUT
-V
ON(CL)
bb(AZ)
t
t
bb
ON
-
-
7
-
14
-
20
A
-
-
- 10 -
41 47 - V
41 - -
150 - - °C
- 10 - K
- - 32 V
- 600 - mV
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2
see also V
3
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
in circuit diagram on page 7
ON(CL)
Page 5
2004-01-27
BTS 462 T
j
)
Parameter and Conditions Symbol Values Unit
at T
= -40...+150°C, V
= 13,5V, unless otherwise specified min. typ. max.
bb
Input
Input turn-on threshold voltage
V
(see page 12)
Input turn-off threshold voltage
V
(see page 12)
Input threshold hysteresis ∆V
Off state input current (see page 12)
I
IN(off)
VIN = 0.7 V
On state input current (see page 12)
I
IN(on)
VIN = 5 V
Input resistance (see page 7) R
IN(T+)
IN(T-)
IN(T
I
- - 2.2 V
0.8 - -
- 0.3 -
1 - 25 µA
3 - 25
1.5 3.5 5 kΩ
Page 6
2004-01-27
BTS 462 T
V
Terms
I
bb
V
R
GND
bb
PROFET
GND
I
GND
OUT
I
IN
IN
V
IN
V
bb
Input circuit (ESD protection)
R
ESD-
I
ZD
I
I
I
GND
IN
Inductive and overvoltage output clamp
+ V
bb
V
Z
V
I
V
L
V
ON
GND
OUT
ON
OUT
VON clamped to 47V typ.
Overvoltage protection of logic part
+
bb
V
Z2
R
I
IN
V
Z1
Logic
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
Reverse battery protection
Logic
R
IN
R
=150Ω, RI=3.5kΩ typ.,
GND
Temperature protection is not active during
inverse current
I
Signal GND
Power
Inverse
Diode
GND
R
GND
Power GND
GND
R
GND
Signal GND
V
=6.1V typ., VZ2=V
Z1
R
=3.5 kΩ typ., R
V
-
bb
OUT
R
L
I
GND
bb(AZ)
=150Ω
=47V typ.,
Page 7
2004-01-27
BTS 462 T
GND disconnect
V
bb
VbbV
IN
PROFET
GND
IN
V
GND
OUT
GND disconnect with GND pull up
V
bb
IN
PROFET
GND
V
bb
V
IN
V
OUT
GND
Vbb disconnect with charged inductive
load
V
bb
high
V
bb
IN
PROFET
GND
OUT
Inductive Load switch-off energy
dissipation
E
bb
E
AS
E
V
bb
IN
PROFET
=
GND
OUT
L
Z
L
{
R
L
Load
E
L
E
R
Energy stored in load inductance: EL = ½ * L * I
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
E
= Ebb + EL - E
AS
with an approximate solution for R
= V
R
ON(CL)
* iL(t) dt,
> 0Ω:
L
IL
*
E
AS
Page 8
L
=+ +
*
2
VV
*( | )*ln(
L
bb OU T CL
R
()|
2004-01-27
2
L
IR
*
LL
1
V
||
OUT CL
()
)
BTS 462 T
Typ. transient thermal impedance
Z
=f(tp) @ 6cm2 heatsink area
thJA
Parameter: D=tp/T
2
10
K/W
thJA
Z
10
10
10
10
-1
-2
1
0
10
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
-7
10
-6
-5
-4
-3
-2
10
10
10
10
-1
10
10 0 10 1 10
Typ. transient thermal impedance
Z
=f(tp) @ min. footprint
thJA
Parameter: D=tp/T
2
10
10
10
10
10
1
0
-1
-2
10
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
-7
-6
10
10
-5
-4
-3
-2
10
10
10
-1
10
10 0 10 1 10
2
t
4
10
s
p
K/W
thJA
Z
2
t
4
10
s
p
Typ. on-state resistance
R
= f(Tj) ; V
ON
160
mΩ
120
ON
100
R
80
60
40
20
0
-40 -20 0 20 40 60 80 100 120
= 13,5V ; V
bb
= high
in
°C
T
Typ. on-state resistance
R
= f(Vbb); IL = 0.5A ; V
ON
200
mΩ
150
ON
125
R
100
75
50
25
0
160
j
0 5 10 15 20 25 30
= high
in
150°C
25°C
-40°C
V
V
40
bb
Page 9
2004-01-27
BTS 462 T
Typ. turn on time
t
= f(Tj); R
on
160
µs
120
on
100
t
80
60
40
20
0
-40 -20 0 20 40 60 80 100 120
= 47Ω
L
°C
T
j
9V
13.5V
32V
160
Typ. turn off time
t
= f(Tj); R
off
160
µs
120
100
off
t
80
60
40
20
0
-40 -20 0 20 40 60 80 100 120
= 47Ω
L
°C
T
32V
9V
160
j
Typ. slew rate on
dV/dt
V/µs
dV
= f(Tj) ; R
on
2
1.6
on
1.4
dt
1.2
1
0.8
0.6
0.4
0.2
0
-40 -20 0 20 40 60 80 100 120
= 47 Ω
L
°C
T
Typ. slew rate off
dV/dt
V/µs
-dV
32V
13.5V
9V
160
j
= f(Tj); R
off
2
1.6
off
1.4
dt
1.2
1
0.8
0.6
0.4
0.2
0
-40 -20 0 20 40 60 80 100 120
= 47 Ω
L
°C
T
32V
13.5V
9V
160
j
Page 10
2004-01-27
BTS 462 T
Typ. standby current
I
bb(off)
= f(Tj) ; V
6
= 32V ; V
bb
µA
4
bb(off)
I
3
2
1
0
-40 -20 0 20 40 60 80 100 120
IN
= low
°C
T
Typ. leakage current
I
= f(Tj) ; Vbb = 32V ; VIN = low
L(off)
2
µA
1.6
1.4
L(off)
I
1.2
1
0.8
0.6
0.4
0.2
0
160
j
-40 -20 0 20 40 60 80 100 120
°C
T
160
j
Typ. initial peak short circuit current limit
I
L(SCp)
= f(Tj) ; V
18
bb
= 20V
A
14
12
L(SCp)
I
10
8
6
4
2
0
-40 -20 0 20 40 60 80 100 120
°C
T
160
j
Typ. initial short circuit shutdown time
t
off(SC)
= f(T
3
j,start
) ; V
bb
= 20V
ms
2
off(SC)
t
1.5
1
0.5
0
-40 -20 0 20 40 60 80 100 120
°C
T
j
160
Page 11
2004-01-27
BTS 462 T
Typ. input current
I
IN(on/off)
V
INlow
µA
IN
I
= f(Tj); V
≤ 0,7V; V
14
10
8
6
4
2
0
-40 -20 0 20 40 60 80 100 120
INhigh
= 13,5V; V
bb
= 5V
Typ. input threshold voltage
= low/high
IN
°C
T
Typ. input current
IIN = f(VIN); V
200
µA
160
140
IN
on
off
160
j
I
120
100
80
60
40
20
0
0 2 4
= 13.5V
bb
-40...25°C
150°C
V
8
V
IN
Typ. input threshold voltage
V
IN(th)
IN(th)
V
= f(Tj) ; V
2
= 13,5V
bb
V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-40 -20 0 20 40 60 80 100 120
°C
T
V
= f(Vbb) ; Tj = 25°C
IN(th)
2
V
on
off
160
j
1.6
1.4
IN(th)
V
1.2
1
0.8
0.6
0.4
0.2
0
5 10 15 20 25
on
off
V
35
V
bb
Page 12
2004-01-27
BTS 462 T
Maximum allowable load inductance
for a single switch off
L = f(IL); T
5000
mH
4000
3500
3000
L
2500
2000
1500
1000
500
0
0 0.5 1 1.5 2 2.5 3 3.5 4
=150°C, Vbb=13.5V, R
jstart
L
A
I
L
=0Ω
Maximum allowable inductive switch-off
energy, single pulse
EAS = f(IL); T
5000
mJ
4000
3500
AS
E
3000
2500
2000
1500
1000
500
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
= 150°C, Vbb = 13,5V
jstart
5
A
I
L
Page 13
2004-01-27
Timing diagrams
BTS 462 T
Figure 1a: Vbb turn on:
IN
V
bb
V
OUT
Figure 2b: Switching a lamp,
IN
OUT
I
L
t
t
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
IN
V
OUT
90%
10%
I
L
t
on
dV/dton
t
off
dV /d to ff
Figure 2c: Switching an inductive load
IN
V
OUT
I
L
t
t
Page 14
2004-01-27
BTS 462 T
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
IN
t
I
L
I
t
t
off(SC)
L(SCp)
m
I
L(SCr)
t
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 4: Overtemperature:
Reset if Tj < T
jt
Figure 5: Undervoltage restart of charge pump
V
o n
V
b b ( u c p )
V
b b ( u n d e r )
V
b b
IN
V
OUT
T
J
t
Page 15
2004-01-27
Package and ordering code
all dimensions in mm
Package: Ordering code:
P-TO252-5-11 Q67060-S7402
+0.15
6.5
-0.05
±0.1
1
-0.2
(4.24)
6.22
0.15 MAX.
per side
4.56
1)
(5)
5.7 MAX.
±0.5
9.98
1) Includes mold flashes on each side.
All metal surfaces tin plated, except area of cut.
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
±0.15
0.8
5 x 0.6
1.14
A
±0.1
0.25MA
B
B
+0.20
0.9
-0.01
0...0.15
0.51 MIN.
2.3
+0.05
-0.10
0.5
0.5
+0.08
-0.04
0.1
+0.08
-0.04
B
Printed circuit board (FR4, 1.5mm thick, one
layer 70µm, 6cm2 active heatsink area ) as
a reference for max. power dissipation P
nominal load current I
resistance R
thja
L(nom)
and thermal
BTS 462 T
tot
Page 16
2004-01-27
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