lnfineon BTS 441 T User Manual

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BTS 441 T
Smart Highside Power Switch One Channel: 20m
Product Summary Package
On-state Resistance RON Operating Voltage V Nominal load current I Current limitation I
bb(on) L(ISO) L(lim)
General Description
Providing embedded protective functions.
20m
4.75 ... 41V
21A
65A
TO-220-5-11 TO-263-5-2 TO-220-5-12
Standard SMD Straight
Application
µC compatible power switch for 5V, 12 V and 24 V DC applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions
Very low standby current
Optimized static electromagnetic compatibility (EMC)
µC and CMOS compatible
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Protection Functions
Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump) with external
GND-resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
IN
Vbb
Logic
with
protection
functions
PROFET
OUT
Load
GND
Infineon Technologies AG 1 of 11 2003-Oct-01
BTS 441 T
p
Functional diagram
IN
overvoltage
rotection
internal
voltage supply
ESD
logic
gate
control
+
charge
pump
temperature
sensor
current limit
clamp for
inductive load
VBB
OUT
LOAD
GND
PROFET
Pin Definitions and Functions
Pin
Symbol Function
1
2 IN
3 Vbb
GND
Input, activates the power switch in
Positive power supply voltage
The tab is shorted to pin 3
4 N.C.
5 OUT
Tab Vbb
Positive power supply voltage
The tab is shorted to pin 3
Logic ground
case of logical high signal
Not connected
Output to the load
Pin configuration
(top view)
Tab = V
BB
1 2 (3) 4 5
GND IN NC OUT
Infineon Technologies AG 2 2003-Oct-01
BTS 441 T
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection
T
=-40 ...+150°C
j Start
Load dump protection1) V
2)
R
= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high
I
LoadDump
= VA + Vs, VA = 13.5 V
Load current (Short-circuit current, see page 5) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC) ; TC≤25°C P Maximal switchable inductance, single pulse
V
= 12V, T
bb
(see diagram, p.8) I
= 150°C, TC = 150°C const.
j,start
= 21 A, RL= 0 : E
L(ISO)
4)
AS
=0.7J:
Electrostatic discharge capability (ESD) IN: (Human Body Model) Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5k; C=100pF
Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC)
see internal circuit diagrams page 7
Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb5): 33
Vbb 34 V V
Load dump
T
j
T
stg
125 W
tot
3)
60 V
-40 ...+150
-55 ...+150
°C
ZL 2.1 mH
V
1.0
ESD
kV
8.0
I
IN
±2.0 mA
R R
thJC thJA
1
75
K/W
1)
Supply voltages higher than V
resistor in the GND connection. A resistor for the protection of the input is integrated.
2)
RI = internal resistance of the load dump test pulse generator
3)
V
Load dump
4)
E
AS
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
is the maximum inductive switch off energy
require an external current limit for the GND pin, e.g. with a 150
bb(AZ)
Infineon Technologies AG 3 2003-Oct-01
BTS 441 T
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
min typ max
On-state resistance (V
IL = 2 A Vbb≥7V T
see diagram page 9
Tj=25 °C:
:
Nominal load current (pin 3 to 5)
‘ISO 10483-1, 6.7:V
=0.5V, TC=85°C
ON
Output current (pin 5) while GND disconnected or
6)
GND pulled up
see diagram page 7
, Vbb=30 V, VIN= 0,
Turn-on time IN
Turn-off time IN
(pin3) to OUT (pin5));
bb
to 90% V
to 10% V
=150 °C:
j
OUT
OUT
:
:
RON
I I
t t
L(ISO)
L(GNDhigh)
on off
RL = 12 Ω, Slew rate on 10 to 30% V Slew rate off
70 to 40% V
, R
OUT
OUT
= 12 Ω,
L
, RL = 12 Ω,
dV /dton 0.1 -- 1 V/µs
-dV/dt
Operating Parameters
Operating voltage Tj =-40°C
V
Tj =+25°C Tj =+105°C
6)
Tj =+150°C Overvoltage protection
I
= 40 mA Tj =+25...+150°C:
bb
Standby current (pin 3) VIN=0 see diagram page 9 T
Off-State output current (included in I
VIN=0
Operating current (Pin 1)9), VIN=5 V,
7)
Tj =-40°C:
8)
Tj=-40...+25°C:
Tj=+105°C6):
=+150°C:
j
)
bb(off)
V I
bb(off)
I
L(off)
I
GND
--
15 28
20 37
17 21 -- A
-- -- 2 mA
40
0.1 -- 1 V/µs
off
4.75
bb(on)
40
4.75
4.75
5.0
bb(AZ)
41 43
--
--
--
90
110
--
--
--
--
--
47
5
--
--
200 250
41 43 43 43
-­52 10
10 25
-- 1.5 10 µA
-- 2 4 mA
m
µs
V
V
µA
6)
not subject to production test, specified by design
7)
see also V
8)
Measured with load, typ. 40 µA without load.
9)
Add IIN, if VIN>5.5 V
in table of protection functions and circuit diagram page 7
ON(CL)
Infineon Technologies AG 4 2003-Oct-01
BTS 441 T
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Protection Functions
10)
Current limit (pin 3 to 5) I
(see timing diagrams, page 9)
=-40°C:
Tj
=25°C:
Tj
=+150°C:
Tj
Repetitive short circuit current limit I
T
= Tjt (see timing diagrams, page 10)
j
Thermal shutdown time
(see timing diagram on page 10)
11)12)
Tj,start
=25°C:
Output clamp (inductive load switch off) ;Tj =-40°C:
at V
OUT
= Vbb - V
ON(CL)
, IL= 40 mA T
=25..150°C: V
j
L(lim)
--
-- 55 -- A
L(SCr)
T
-- 14 -- ms
off(SC)
ON(CL)
min typ max
--
--
40
41 43
65
--
--
47 Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Reverse battery (pin 3 to 1)
13)
Reverse battery voltage drop (V
IL = -2A
-Vbb -- -- 32 V > Vbb)
OUT
=+150°C:
Tj
Tjt -- 10 -- K
-V
ON(rev)
-- 540 -- mV
85
52
A
--
--
--
V
10)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
11)
not subject to production test, specified by design
12)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
13)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 1 and circuit page 7).
Infineon Technologies AG 5 2003-Oct-01
BTS 441 T
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
14)
Input
min typ max
Input resistance see circuit page 7 RI 2.5 3.8 6.5 k Input turn-on threshold voltage V Input turn-off threshold voltage V Input threshold hysteresis V Off state input current (pin 2) VIN = 0.4 V: I On state input current (pin 2) VIN = 5 V: I
1.2 -- 2.2 V
IN(T+)
0.8 -- -- V
IN(T-)
-- 0.3 -- V
IN(T)
1 -- 15 µA
IN(off)
4.5 12 24 µA
IN(on)
14)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Infineon Technologies AG 6 2003-Oct-01
BTS 441 T
Overvolt. and reverse batt. protection
Terms
+ V
bb
I
bb
V
bb
I
IN
IN
2
V
IN
R
Input circuit (ESD protection)
R
IN
I
PROFET
GND
Leadframe, 3
V
bb
GND
1
I
OUT
GND
R
IN
I
V
L
ON
R
I
IN
Logic
5
V
Z1
V
OUT
R
Signal GND
= 6.1 V typ., VZ2 = 47 V typ., R
V
Z1
R
= 3.5 k typ.
I
In case of reverse battery the load current has to be limited by the load. Temperature protection is not active
GND
V
Z2
PROFET
GND
Load GND
= 150 Ω,
GND
OUT
R
Load
ESD-ZD
I
I
I
GND
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
Inductive and overvoltage output clamp
V
Z
GND
PROFET
+ V
V
OUT
bb
ON
V
clamped to 47 V typ.
ON
GND disconnect
V
bb
IN
PROFET
OUT
GND
VbbV
Any kind of load. In case of Input=high is V
IN
V
GND
OUT
VIN - V
GND disconnect with GND pull up
V
bb
IN(T+)
.
V
OUT
GND
PROFET
IN
GND
V
bb
V
IN
Any kind of load. If V
GND
> V
- V
IN
device stays off
IN(T+)
Infineon Technologies AG 7 2003-Oct-01
BTS 441 T
A
Vbb disconnect with charged inductive load
V
bb
high
V
bb
For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis­connection with energized inductive load all the load current flows through the GND connection.
IN
PROFET
GND
OUT
Inductive load switch-off energy dissipation
E
bb
E
S
V
bb
/
·L·I
2
OUT
Z
2 L
ON(CL)·iL
L
L
{
R
L
(t) dt,
IN
PROFET
=
GND
Energy stored in load inductance:
1
=
E
L
While demagnetizing load inductance, the energy dissipated in PROFET is
= Ebb + EL - ER= V
E
AS
E
E
E
Load
L
R
with an approximate solution for RL > 0
· L
I
L
=
(V
E
AS
·R
2
+ |V
OUT(CL)
bb
L
|) ln (1+
Ω:
|V
·R
I
L
L
OUT(CL)
)
|
Maximum allowable load inductance for a single switch off
L = f (I
L [mH]
1000
100
10
L
); T
j,start
150°C, V
=
= 12 V, RL = 0
bb
1
0.1
0 5 101520253035
I
[A]
L
Infineon Technologies AG Page 8 2003-Oct-01
BTS 441 T
Typ. on-state resistance
R
= f (Vbb,T
ON
R
[m]
ON
40
); IL = 2 A, IN = high
j
35
Tj = 150°C
30
25
20
25°C
15
-40°C
10
5
3 5 7 9 30 40
V
bb
[V]
Typ. standby current
I
= f (T
bb(off)
[µA]
I
bb(off)
j
); V
= 9...34 V, IN1,2 = low
bb
0
15
10
5
0
-50 0 50 100 150 200
T
[°C]
j
Infineon Technologies AG Page 9 2003-Oct-01
BTS 441 T
IN
IN
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
V
OUT
V
bb
I
L
t
V
OUT
proper turn on under all conditions
Figure 2a: Switching a resistive load,
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN
I
other channel: normal operation
L
turn-on/off time and slew rate definition:
I
IN
L(lim)
I
L(SCr)
V
OUT
90%
10%
I
t
on
dV/dton
t
off(SC)
Heating up may require several milliseconds, depending on
dV/dtoff
t
off
external conditions
Figure 4a: Overtemperature: Reset if T
<Tjt
j
t
IN
L
V
OUT
t
T
J
t
Infineon Technologies AG 10 2003-Oct-01
BTS 441 T
Package and Ordering Code
Straight: P-TO220-5-12
All dimensions in mm
Standard (=staggered): P-TO220-5-11
Sales code BTS441T
Ordering code: Q67060-S6112-A2
±0.2
10
±0.15
9.8
8.5
3.7
-0.15
1)
±0.3
±0.3
13.4
17
15.65
C
0...0.15
1.7
1)
Typical All metal surfaces tin plated, except area of cut.
SMD: P-TO263-5-2 (tape&reel)
Sales code BTS441T G
Ordering code: Q67060-S6112-A3
±0.2
10
±0.15
9.8
8.5
±0.3
1
±0.2
9.25
(15)
5x0.8
±0.1
1)
Typical All metal surfaces tin plated, except area of cut.
1)
1)
A
±0.2
2.8
±0.3
±0.3
8.6
10.2
0.8
±0.1
A
1)
8
±0.3
1.3
0...0.15
4x1.7
4.4
±0.1
1.27
0.05
±0.2
9.25
±0.3
3.7
0.5
±0.1
2.4
±0.4
M
A0.25
C
8.4
±0.4
3.9
Published by Infineon Technoligies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001. All Rights Reserved
Attention please!
The information herein is given t o describe certain components and shall not be considered as a guarantee of characteristic s. Terms of delivery and rights to technical change reserv ed. We hereby disclaim any and all warranties, including but not l i mited to warranties of non-infringement , regardi ng circuits, desc ri ptions and charts stated herein.
Information
For further information on technol ogy, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address ist).
1.27 B
±0.1
0.1
4.4
0.05
Warnings
2.4
Due to technical requirements components may contain dangerous substances. For inform ation on the types in questi on pl ease contact your nearest Infineon Technologies Office.
Infineon Technologies Components m ay only be used in life-support devices or systems with the express written approval of Infineon
±0.5
4.7
±0.3
2.7
Technologies, if a failure of such components can reasonabl y be
0.5
±0.1
expected to cause the f ai l ure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
M
8˚ max.
BA0.25
0.1
support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons m ay be endangered.
Sales code BTS441T S
Ordering code: Q67060-S6112-A4
±0.2
10
9.8
8.5
3.7
1)
±0.3
±0.3
13.4
17
15.65
C
0...0.15
1.7
Typical
1)
All metal surfaces tin plated, except area of cut.
±0.15
1)
-0.15
6x
0.8
±0.2
2.8
±0.5
11
±0.1
A
±0.5
13
M
BA0.25
B
4.4
±0.1
1.27
0.05
2.4
C
0.5
±0.2
9.25
±0.1
Infineon Technologies AG 11 2003-Oct-01
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