lnfineon BTS 441 T User Manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

BTS 441 T

Smart Highside Power Switch
One Channel: 20mΩ

Product Summary Package

On-state Resistance RON
Operating Voltage V
Nominal load current I
Current limitation I

bb(on)
L(ISO)
L(lim)

General Description

• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS® technology.

• Providing embedded protective functions.

20mΩ

4.75 ... 41V

21A

65A

TO-220-5-11 TO-263-5-2 TO-220-5-12

Standard SMD Straight

Application

• µC compatible power switch for 5V, 12 V and 24 V DC applications

• All types of resistive, inductive and capacitve loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Basic Funktions

• Very low standby current

• Optimized static electromagnetic compatibility (EMC)

• µC and CMOS compatible

• Fast demagnetization of inductive loads

• Stable behaviour at undervoltage

Protection Functions

• Short circuit protection

• Current limitation

• Overload protection

• Thermal shutdown

• Overvoltage protection (including load dump) with external

GND-resistor

• Reverse battery protection with external GND-resistor

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

IN

Vbb

Logic

with

protection

functions

PROFET

OUT

Load

GND

Infineon Technologies AG 1 of 11 2003-Oct-01

BTS 441 T

p

Functional diagram

IN

overvoltage

rotection

internal

voltage supply

ESD

logic

gate

control

+

charge

pump

temperature

sensor

current limit

clamp for

inductive load

VBB

OUT

LOAD

GND

PROFET

Pin Definitions and Functions

Pin

Symbol Function

1

2 IN

3 Vbb

GND

Input, activates the power switch in

Positive power supply voltage

The tab is shorted to pin 3

4 N.C.

5 OUT

Tab Vbb

Positive power supply voltage

The tab is shorted to pin 3

Logic ground

case of logical high signal

Not connected

Output to the load

Pin configuration

(top view)

Tab = V

BB

1 2 (3) 4 5

GND IN NC OUT

Infineon Technologies AG 2 2003-Oct-01

BTS 441 T

Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection1) V

2)

R

= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high

I

LoadDump

= VA + Vs, VA = 13.5 V

Load current (Short-circuit current, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C P
Maximal switchable inductance, single pulse

V

= 12V, T

bb

(see diagram, p.8) I

= 150°C, TC = 150°C const.

j,start

= 21 A, RL= 0 Ω: E

L(ISO)

4)

AS

=0.7J:

Electrostatic discharge capability (ESD) IN:
(Human Body Model) Out to all other pins shorted:

acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF

Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)

see internal circuit diagrams page 7

Thermal resistance chip - case:
junction - ambient (free air):
SMD version, device on pcb5): ≤ 33

Vbb 34 V
V

Load dump

T

j

T

stg

125 W

tot

3)

60 V

-40 ...+150

-55 ...+150

°C

ZL 2.1 mH

V

1.0

ESD

kV

8.0

I

IN

±2.0 mA

R
R

thJC
thJA

≤ 1

≤ 75

K/W

1)

Supply voltages higher than V

resistor in the GND connection. A resistor for the protection of the input is integrated.

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

4)

E

AS

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

is the maximum inductive switch off energy

require an external current limit for the GND pin, e.g. with a 150 Ω

bb(AZ)

Infineon Technologies AG 3 2003-Oct-01

BTS 441 T

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

min typ max

On-state resistance (V

IL = 2 A Vbb≥7V
T

see diagram page 9

Tj=25 °C:

:

Nominal load current (pin 3 to 5)

‘ISO 10483-1, 6.7:V

=0.5V, TC=85°C

ON

Output current (pin 5) while GND disconnected or

6)

GND pulled up

see diagram page 7

, Vbb=30 V, VIN= 0,

Turn-on time IN

Turn-off time IN

(pin3) to OUT (pin5));

bb

to 90% V

to 10% V

=150 °C:

j

OUT

OUT

:

:

RON

I
I

t
t

L(ISO)

L(GNDhigh)

on
off

RL = 12 Ω,
Slew rate on
10 to 30% V
Slew rate off

70 to 40% V

, R

OUT

OUT

= 12 Ω,

L

, RL = 12 Ω,

dV /dton 0.1 -- 1 V/µs

-dV/dt

Operating Parameters

Operating voltage Tj =-40°C

V

Tj =+25°C
Tj =+105°C

6)

Tj =+150°C
Overvoltage protection

I

= 40 mA Tj =+25...+150°C:

bb

Standby current (pin 3)
VIN=0 see diagram page 9 T

Off-State output current (included in I

VIN=0

Operating current (Pin 1)9), VIN=5 V,

7)

Tj =-40°C:

8)

Tj=-40...+25°C:

Tj=+105°C6):

=+150°C:

j

)

bb(off)

V
I

bb(off)

I

L(off)

I

GND

--

15
28

20
37

17 21 -- A

-- -- 2 mA

40

0.1 -- 1 V/µs

off

4.75

bb(on)

40

4.75

4.75

5.0

bb(AZ)

41
43

--

--

--

90

110

--

--

--

--

--

47

5

--

--

200
250

41
43
43
43

-­52
10

10
25

-- 1.5 10 µA

-- 2 4 mA

mΩ

µs

V

V

µA

6)

not subject to production test, specified by design

7)

see also V

8)

Measured with load, typ. 40 µA without load.

9)

Add IIN, if VIN>5.5 V

in table of protection functions and circuit diagram page 7

ON(CL)

Infineon Technologies AG 4 2003-Oct-01

BTS 441 T

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

Protection Functions

10)

Current limit (pin 3 to 5) I

(see timing diagrams, page 9)

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

Repetitive short circuit current limit I

T

= Tjt (see timing diagrams, page 10)

j

Thermal shutdown time

(see timing diagram on page 10)

11)12)

Tj,start

=25°C:

Output clamp (inductive load switch off) ;Tj =-40°C:

at V

OUT

= Vbb - V

ON(CL)

, IL= 40 mA T

=25..150°C: V

j

L(lim)

--

-- 55 -- A

L(SCr)

T

-- 14 -- ms

off(SC)

ON(CL)

min typ max

--

--

40

41
43

65

--

--

47
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
Reverse battery (pin 3 to 1)

13)

Reverse battery voltage drop (V

IL = -2A

-Vbb -- -- 32 V
> Vbb)

OUT

=+150°C:

Tj

∆

Tjt -- 10 -- K

-V

ON(rev)

-- 540 -- mV

85

52

A

--

--

--

V

10)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.

11)

not subject to production test, specified by design

12)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

13)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 1 and circuit page 7).

Infineon Technologies AG 5 2003-Oct-01

BTS 441 T

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

14)

Input

min typ max

Input resistance see circuit page 7 RI 2.5 3.8 6.5 kΩ
Input turn-on threshold voltage V
Input turn-off threshold voltage V
Input threshold hysteresis ∆ V
Off state input current (pin 2) VIN = 0.4 V: I
On state input current (pin 2) VIN = 5 V: I

1.2 -- 2.2 V

IN(T+)

0.8 -- -- V

IN(T-)

-- 0.3 -- V

IN(T)

1 -- 15 µA

IN(off)

4.5 12 24 µA

IN(on)

14)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Infineon Technologies AG 6 2003-Oct-01

BTS 441 T

Overvolt. and reverse batt. protection

Terms

+ V

bb

I

bb

V

bb

I

IN

IN

2

V

IN

R

Input circuit (ESD protection)

R

IN

I

PROFET

GND

Leadframe, 3

V

bb

GND

1

I

OUT

GND

R

IN

I

V

L

ON

R

I

IN

Logic

5

V

Z1

V

OUT

R

Signal GND

= 6.1 V typ., VZ2 = 47 V typ., R

V

Z1

R

= 3.5 kΩ typ.

I

In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active

GND

V

Z2

PROFET

GND

Load GND

= 150 Ω,

GND

OUT

R

Load

ESD-ZD

I

I

I

GND

The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.

Inductive and overvoltage output clamp

V

Z

GND

PROFET

+ V

V

OUT

bb

ON

V

clamped to 47 V typ.

ON

GND disconnect

V

bb

IN

PROFET

OUT

GND

VbbV

Any kind of load. In case of Input=high is V

IN

V

GND

OUT

≈ VIN - V

GND disconnect with GND pull up

V

bb

IN(T+)

.

V

OUT

GND

PROFET

IN

GND

V

bb

V

IN

Any kind of load. If V

GND

> V

- V

IN

device stays off

IN(T+)

Infineon Technologies AG 7 2003-Oct-01

BTS 441 T

A

Vbb disconnect with charged inductive
load

V

bb

high

V

bb

For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb dis­connection with energized inductive load all the load current
flows through the GND connection.

IN

PROFET

GND

OUT

Inductive load switch-off energy
dissipation

E

bb

E

S

V

bb

/

·L·I

2

OUT

Z

2
L

ON(CL)·iL

L

L

{

R

L

(t) dt,

IN

PROFET

=

GND

Energy stored in load inductance:

1

=

E

L

While demagnetizing load inductance, the energy
dissipated in PROFET is

= Ebb + EL - ER= V

E

AS

E

E

E

Load

L

R

with an approximate solution for RL > 0

· L

I

L

=

(V

E

AS

·R

2

+ |V

OUT(CL)

bb

L

|) ln (1+

Ω:

|V

·R

I

L

L

OUT(CL)

)

|

Maximum allowable load inductance for
a single switch off

L = f (I

L [mH]

1000

100

10

L

); T

j,start

150°C, V

=

= 12 V, RL = 0 Ω

bb

1

0.1

0 5 101520253035

I

[A]

L

Infineon Technologies AG Page 8 2003-Oct-01

BTS 441 T

Typ. on-state resistance

R

= f (Vbb,T

ON

R

[mΩ]

ON

40

); IL = 2 A, IN = high

j

35

Tj = 150°C

30

25

20

25°C

15

-40°C

10

5

3 5 7 9 30 40

V

bb

[V]

Typ. standby current

I

= f (T

bb(off)

[µA]

I

bb(off)

j

); V

= 9...34 V, IN1,2 = low

bb

0

15

10

5

0

-50 0 50 100 150 200

T

[°C]

j

Infineon Technologies AG Page 9 2003-Oct-01

BTS 441 T

IN

IN

Timing diagrams

Figure 2b: Switching a lamp,

Figure 1a: Vbb turn on:

V

OUT

V

bb

I

L

t

V

OUT

proper turn on under all conditions

Figure 2a: Switching a resistive load,

Figure 3a: Short circuit

shut down by overtemperature, reset by cooling

IN

I

other channel: normal operation

L

turn-on/off time and slew rate definition:

I

IN

L(lim)

I

L(SCr)

V

OUT

90%

10%

I

t

on

dV/dton

t

off(SC)

Heating up may require several milliseconds, depending on

dV/dtoff

t

off

external conditions

Figure 4a: Overtemperature:
Reset if T

<Tjt

j

t

IN

L

V

OUT

t

T

J

t

Infineon Technologies AG 10 2003-Oct-01

BTS 441 T

Package and Ordering Code

Straight: P-TO220-5-12

All dimensions in mm

Standard (=staggered): P-TO220-5-11

Sales code BTS441T

Ordering code: Q67060-S6112-A2

±0.2

10

±0.15

9.8

8.5

3.7

-0.15

1)

±0.3

±0.3

13.4

17

15.65

C

0...0.15

1.7

1)

Typical
All metal surfaces tin plated, except area of cut.

SMD: P-TO263-5-2 (tape&reel)

Sales code BTS441T G

Ordering code: Q67060-S6112-A3

±0.2

10

±0.15

9.8

8.5

±0.3

1

±0.2

9.25

(15)

5x0.8

±0.1

1)

Typical
All metal surfaces tin plated, except area of cut.

1)

1)

A

±0.2

2.8

±0.3

±0.3

8.6

10.2

0.8

±0.1

A

1)

8

±0.3

1.3

0...0.15

4x1.7

4.4

±0.1

1.27

0.05

±0.2

9.25

±0.3

3.7

0.5

±0.1

2.4

±0.4

M

A0.25

C

8.4

±0.4

3.9

Published by Infineon Technoligies AG,
St.-Martin-Strasse 53, D-81669 München
© Infineon Technologies AG 2001. All Rights Reserved

Attention please!

The information herein is given t o describe certain components and
shall not be considered as a guarantee of characteristic s.
Terms of delivery and rights to technical change reserv ed.
We hereby disclaim any and all warranties, including but not l i mited
to warranties of non-infringement , regardi ng circuits, desc ri ptions
and charts stated herein.

Information

For further information on technol ogy, delivery terms and conditions
and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives worldwide
(see address ist).

1.27
B

±0.1

0.1

4.4

0.05

Warnings

2.4

Due to technical requirements components may contain dangerous
substances. For inform ation on the types in questi on pl ease contact
your nearest Infineon Technologies Office.

Infineon Technologies Components m ay only be used in life-support
devices or systems with the express written approval of Infineon

±0.5

4.7

±0.3

2.7

Technologies, if a failure of such components can reasonabl y be

0.5

±0.1

expected to cause the f ai l ure of that life-support device or system, or
to affect the safety or effectiveness of that device or system. Life

M

8˚ max.

BA0.25

0.1

support devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons m ay be endangered.

Sales code BTS441T S

Ordering code: Q67060-S6112-A4

±0.2

10

9.8

8.5

3.7

1)

±0.3

±0.3

13.4

17

15.65

C

0...0.15

1.7

Typical

1)

All metal surfaces tin plated, except area of cut.

±0.15

1)

-0.15

6x

0.8

±0.2

2.8

±0.5

11

±0.1

A

±0.5

13

M

BA0.25

B

4.4

±0.1

1.27

0.05

2.4

C

0.5

±0.2

9.25

±0.1

Infineon Technologies AG 11 2003-Oct-01