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BTS436L2
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary Package
On-state Resistance R
Operating Voltage V
Nominal load current I
Current limitation I
38mΩ
ON
4.75...41V
bb(on)
9.8A
L(NOM)
40A
L(SCr)
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
• Providing embedded protective functions
TO 220-5-11 TO-263-5-2 TO-220-5-12
Standard SMD Straight
technology.
Applications
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Block Diagram
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of V
protection
bb
• Electrostatic discharge protection (ESD)
IN
ST
Vbb
Logic
with
protection
functions
OUT
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
PROFET
GND
Load
• Feedback of thermal shutdown in ON-state
Semiconductor Group Page 1 of 12 2003-Oct-01
BTS436L2
p
g
Functional diagram
IN
ST
GND
overvoltage
rotection
internal
e supply
volta
ESD
logic
gate
control
+
charge
pump
temperature
sensor
Open load
detection
current limit
clamp for
inductive load
VBB
OUT
LOAD
PROFET
Pin Definitions and Functions
Pin
Symbol Function
1
2 IN
3 Vbb
4 ST
GND
Input, activates the power switch in
Positive power supply voltage
The tab is shorted to pin 3
Diagnostic feedback, low on failure
5 OUT
Tab Vbb
Positive power supply voltage
The tab is shorted to pin 3
Logic ground
case of logical high signal
Output to the load
Pin configuration
(top view)
Tab = V
BB
1 2 (3) 4 5
GND IN ST OUT
Semiconductor Group Page 2 2003-Oct-01
BTS436L2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection
T
=-40 ...+150°C
j Start
Load dump protection
2
)
R
= 2 Ω, RL= 4.0 Ω, t
I
1
)
V
LoadDump
= 200 ms, IN= low or high
d
= VA + Vs, VA = 13.5 V
Load current (Current limit, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Power dissipation (DC), T
≤ 25 °C P
C
Maximal switchable inductance, single pulse
V
= 12V, T
bb
(See diagram on page 8) I
= 150°C, TC = 150°C const.
j,start
L(ISO)
= 9.8 A, R
= 0 Ω, E
L
4
)
AS
=0.33J:
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
Vbb 24 V
V
Load dump
Tj
T
stg
75 W
tot
3
60 V
-40 ...+150
-55 ...+150
°C
ZL 5.0 mH
V
1.0
ESD
kV
4.0
8.0
IIN
IST
±2.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
75
K/W
--
bb
Thermal resistance chip - case:
junction - ambient (free air):
device on pcb
1
)
Supply voltages higher than V
resistor for the GND connection is recommended).
2
)
RI = internal resistance of the load dump test pulse generator
3
)
V
Load dump
4
)
EAS is the maximum inductive switch-off energy
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins (a 150Ω
bb(AZ)
5
)
R
thJC
R
thJA
:
2
(one layer, 70µm thick) copper area for V
--
--
--
--
--
33
1.75
Semiconductor Group Page 3 2003-Oct-01
BTS436L2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, V
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A; V
≥ 7V T
BB
Tj=150 °C:
see diagram, page 9
Nominal load current, (pin 3 to 5)
ISO 10483-1, 6.7:VON=0.5V, TC=85°C
Output current (pin 5) while GND disconnected or
GND pulled up
see diagram page 7
Turn-on time IN to 90% V
Turn-off time IN to 10% V
R
= 12 Ω,
L
Slew rate on
10 to 30% V
OUT
Slew rate off
70 to 40% V
OUT
= 12 V unless otherwise specified
bb
6
)
, Vbb=30 V, VIN= 0,
, R
= 12 Ω,
L
, R
= 12 Ω,
L
=25 °C:
j
OUT
OUT
RON
min typ max
--
35
64
I
L(ISO)
I
L(GNDhigh)
:
ton
:
t
off
dV /dt
-dV/dt
-- -- 2 mA
0.1 -- 1 V/µs
on
0.1 -- 1 V/µs
off
8.8
50
50
9.8 -- A
100
120
38
72
200
250
mΩ
µs
Operating Parameters
Operating voltage Tj =-40
Tj =+25...+150°C:
7
Overvoltage protection
)
Tj =-40°C:
Ibb=40 mA Tj =25...+150°C:
Standby current (pin 3)
VIN=0; see diagram on page 9 T
Off-State output current (included in I
VIN=0
Operating current
8)
T
9
)
, VIN=5 V
=-40...+25°C:
j
= 150°C:
j
)
bb(off)
6
)
not subject to production test, specified by design
7
)
Supply voltages higher than V
resistor for the GND connection is recommended. See also V
circuit diagram page 7.
8
)
Measured with load
9
)
Add I
, if IST > 0, add IIN, if VIN>5.5 V
ST
require an external current limit for the GND and status pins (a 150Ω
bb(AZ)
V
4.75 --
bb(on)
--
V
I
I
I
41
bb(AZ)
43
--
bb(off)
--
-- 1 10 µA
L(off)
-- 0.8 1.4 mA
GND
in table of protection functions and
ON(CL)
--
47
5
--
41
43
52
25
V
--
8
V
µA
Semiconductor Group Page 4 2003-Oct-01
BTS436L2
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, V
Protection Functions
Current limit (pin 3 to 5) I
(see timing diagrams on page 11) T
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit I
Tj = Tjt (see timing diagrams, page 11) -- 40 -- A
Thermal shutdown time
(see timing diagrams on page 11)
Output clamp (inductive load switch off)
at V
= Vbb - V
OUT
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
Reverse battery (pin 3 to 1)
Reverse battery voltage drop (V
IL = -2 A Tj=150 °C: -V
Diagnostic Characteristics
Open load detection current
(on-condition)
Input and Status Feedback
Input resistance
see circuit page 7
Input turn-on threshold voltage V
Input turn-off threshold voltage V
Input threshold hysteresis ∆ V
Off state input current (pin 2), VIN = 0.4 V I
On state input current (pin 2), VIN = 5 V I
Delay time for status with open load after switch off
(see timing diagrams on page 11)
Status output (open drain)
Zener limit voltage I
ST low voltage IST = +1.6 mA:
10
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
12
)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
13
)
not subject to production test, specified by design
14
)
If a ground resistor R
Semiconductor Group Page 5 2003-Oct-01
= 12 V unless otherwise specified
bb
10)
11)
T
I
ON(CL)
12)
14
is used, add the voltage drop across this resistor.
GND
-Vbb -- -- 32 V
out
)
> V
j,start
bb
ST
L
13 )
)
= +1.6 mA:
=-40°C:
j
= 25°C:
46
t
= 40 mA: V
∆
I
R
t
V
V
2
(one layer, 70µm thick) copper area for V
min typ max
L(lim)
58
39
30
L(SCr)
-- 1.9 -- ms
off(SC)
41
ON(CL)
43
51
38
47 52 V
68
58
46
Tjt -- 10 -- K
ON(rev)
100 -- 900 mA
L (OL)
2.5 3.5 6 kΩ
I
1.7 -- 3.2 V
IN(T+)
1.5 -- -- V
IN(T-)
-- 0.5 -- V
IN(T)
1 -- 50 µA
IN(off)
20 50 90 µA
IN(on)
d(ST OL4)
ST(high)
ST(low)
100 520 900 µs
-- 600 -- mV
5.4
--
6.1
--
--
0.4
bb
A
V
BTS436L2
Truth Table
Input Output Status
Normal
operation
Open load L
Overtemperature
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)
level
level BTS 436L2
L
H
H
L
H
L
H
Z
H
L
L
H
H
H
L
H
L
Semiconductor Group Page 6 2003-Oct-01
BTS436L2
Terms
I
bb
R
I
3
PROFET
GND
1
GND
V
bb
I
GND
I
I
V
L
OUT
5
V
I
I
IN
IN
2
I
ST
ST
V
IN
V
bb
Input circuit (ESD protection)
4
V
ST
R
IN
I
ESD-ZD
GND
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended
Status output
R
ST(ON)
+5V
ST
ON
OUT
Overvolt. and reverse batt. protection
+ 5V
R
ST
R
I
IN
Logic
ST
R
ST
V
Z1
= 6.1 V typ., VZ2 = 47 V typ., R
V
Z1
R
= 15 kΩ, RI= 3.5 kΩ typ.
ST
R
Signal GND
GND
V
Z2
PRO FET
GND
GND
OUT
Load GND
= 150 Ω,
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Open-load detection in on-state
Open load, if V
Logic
unit
ON
ON
< R
ON·IL(OL)
Open load
detection
; IN high
+ V
R
OUT
bb
V
+ V
Load
ON
bb
ESD-
GND
ZD
ESD-Zener diode: 6.1 V typ., max 5.0 mA; R
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Inductive and overvoltage output clamp
V
Z
GND
PROFET
ST(ON)
+ V
V
OUT
< 375 Ω
bb
ON
V
clamped to 47 V typ.
ON
GND disconnect
3
V
IN
2
bb
PROFET
ST
4
V
V
IN
V
ST
bb
GND
1
V
GND
Any kind of load. In case of Input=high is V
Due to V
>0, no VST = low signal available.
GND
OUT
OUT
≈ V
5
- V
IN
IN(T+)
.
Semiconductor Group Page 7 2003-Oct-01
BTS436L2
GND disconnect with GND pull up
3
V
bb
PROFET
GND
1
V
IN(T+)
OUT
5
GND
device stays off
V
bb
Any kind of load. If V
Due to V
V
IN
>0, no VST = low signal available.
GND
2
4
V
ST
GND
IN
ST
>
VIN - V
Inductive Load switch-off energy
dissipation
E
bb
V
IN
=
ST
bb
PROFET
GND
OUT
E
AS
E
Load
E
L
{Z
R
L
L
L
E
R
Vbb disconnect with energized inductive
load
3
high
V
bb
IN
2
ST
4
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
V
bb
PROFET
GND
1
OUT
5
Energy stored in load inductance:
L
L
2
1
E
/
=
·L·I
2
While demagnetizing load inductance, the energy
dissipated in PROFET is
= Ebb + EL - ER= V
E
AS
with an approximate solution for R
· L
I
L
=
·(V
E
AS
2
·R
+ |V
bb
OUT(CL)
L
|)· ln (1+
ON(CL)·iL
L
> 0 Ω:
|V
(t) dt,
I
L·RL
OUT(CL)
)
|
Maximum allowable load inductance for
a single switch off
j,start
L
150°C,T
=
0 Ω
=
L = f (I
V
Z
); T
L
12 V, R
=
bb
[mH]
L
1000
100
150°C const.,
=
C
10
1
0.1
02 4610121416 18
IL [A]
Semiconductor Group Page 8 2003-Oct-01
BTS436L2
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
R
[mΩ]
ON
80
70
Tj = 150°C
60
50
40
25°C
30
-40°C
20
10
3 5 7 9 30 40
V
bb
[V]
Typ. standby current
I
= f (Tj ); V
bb(off)
I
[µA]
bb(off)
45
40
35
30
25
20
= 9...34 V, IN1,2 = low
bb
15
10
5
0
-50 0 50 100 150 200
T
[°C]
j
Semiconductor Group Page 9 2003-Oct-01
BTS436L2
Timing diagrams
Figure 1a: Vbb turn on:
IN
V
bb
V
OUT
Figure 2b: Switching a lamp,
IN
ST
V
OUT
ST open drain
proper turn on under all conditions
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
IN
V
OUT
90%
t
on
dV/dton
10%
t
off
dV/dtoff
I
t
L
The initial peak current should be limited by the lamp and not by the
current limit of the device.
Figure 2c: Switching an inductive load
IN
ST
V
OUT
t
I
L
I
L
t
I
L(OL)
t
*) if the time constant of load is too large, open-load-status may
occur
Semiconductor Group Page 10 2003-Oct-01
BTS436L2
t
t
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN
other channel: normal operation
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
IN
I
L
I
L(lim)
I
L(SCr)
t
ST
Heating up of the chip may require several milliseconds, depending
on external conditions
off(SC)
t
Figure 4a: Overtemperature:
Reset if T
<Tjt
j
IN
t
d(ST OL)
ST
V
OUT
I
normal
L
open
normal
t
= 10 µs typ.
d(ST OL)
Figure 5b: Open load: turn on/off to open load
IN
t
d(ST OL)
t
ST
d(STOL4)
ST
V
OUT
I
L
T
J
t
Semiconductor Group Page 11 2003-Oct-01
BTS436L2
Package and Ordering Code
All dimensions in mm
Standard (=staggered): P-TO220-5-11
Sales code BTS436L2
Ordering code: Q67060-S6111-A2
±0.2
10
±0.15
9.8
8.5
3.7
-0.15
1)
±0.3
±0.3
13.4
17
15.65
C
0...0.15
1.7
1)
Typical
All metal surfaces tin plated, except area of cut.
SMD: P-TO263-5-2 (tape&reel)
Sales code BTS436L2 G
Ordering code: T&R Q67060-S6111-A3
±0.2
10
±0.15
9.8
8.5
±0.3
1
±0.2
9.25
(15)
5x0.8
±0.1
1)
Typical
All metal surfaces tin plated, except area of cut.
1)
1)
A
±0.2
2.8
±0.3
±0.3
8.6
10.2
0.8
±0.1
A
1)
8
±0.3
0...0.15
4x1.7
1.3
4.4
±0.1
1.27
0.05
±0.2
9.25
±0.3
3.7
0.5
2.4
M
A0.25
C
8.4
3.9
±0.4
4.4
±0.1
1.27
B
0.1
2.4
±0.3
±0.5
2.7
4.7
8˚ max.
M
BA0.25
0.5
0.05
±0.1
0.1
Straight: P-TO220-5-12
Sales code BTS436L2 S
Ordering code: Q67060-S6111-A4
±0.2
10
9.8
8.5
3.7
1)
±0.3
±0.3
13.4
17
15.65
C
0...0.15
±0.1
±0.4
1.7
Typical
1)
All metal surfaces tin plated, except area of cut.
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
±0.15
1)
-0.15
6x
0.8
±0.2
2.8
±0.5
11
±0.1
A
±0.5
13
M
BA0.25
B
4.4
±0.1
1.27
0.05
2.4
C
0.5
±0.2
9.25
±0.1
Semiconductor Group Page 12 2003-Oct-01
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