查询BFS481供应商
NPN Silicon RF Transistor
For low-noise, high-gain broadband amplifier
at collector currents from 0.5 mA to 12 mA
fT = 8 GHz
BFS481
4
5
6
F = 1.4 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1 E2 B2
6 54
TR2
TR1
321
C2E1B1
EHA07196
2
1
VPS05604
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS481 RFs 1=B 2=E 3=C 4=B 5=E 6=C
SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
CEO
CES
CBO
EBO
12 V
20
20
2
3
Collector current I
Base current I
Total power dissipation
T
83 °C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
1 Jun-27-2001
C
B
P
R
tot
j
A
stg
thJS
20 mA
2
175 mW
150 °C
-65 ... 150
-65 ... 150
380
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFS481
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-emitter cutoff current
= 20 V, VBE = 0
V
CE
Collector-base cutoff current
= 10 V, IE = 0
V
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 5 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
50 100 200
-
2 Jun-27-2001
BFS481
Electrical Characteristics at T
= 25°C, unless otherwise specified.
A
Parameter
AC characteristics (verified by random sampling)
Transition frequency
I
= 10 mA, VCE = 8 V, f = 500 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 10 V, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
I
= 2 mA, VCE = 8 V, ZS = Z
C
Sopt
,
f = 900 MHz
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
6 8 - GHz
- 0.24 0.4 pF
- 0.11 -
- 0.35 -
-
1.45
dB
-
f = 1.8 GHz
Power gain, maximum stable 1)
I
= 5 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 900 MHz
Power gain, maximum available 2)
I
= 5 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 1.8 GHz
Transducer gain
I
= 5 mA, VCE = 8 V, ZS = ZL = 50 ,
C
f = 900 MHz
f = 1.8 GHz
1
Gms = |S21 / S12|
2
Gma = |S21 / S12| (k-(k2-1)
1/2
)
Lopt
Lopt
,
,
G
G
|S
ms
ma
21e
-
1.8
-
- 19 -
- 14.5 -
2
|
-
-
15.5
10.5
-
-
3 Jun-27-2001
BFS481
Total power dissipation P
200
mW
160
140
tot
P
120
100
80
60
40
20
= f (TS)
tot
0
0 20 40 60 80 100 120
Permissible Pulse Load R
3
10
K/W
thJS
R
2
10
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
-
/ P
totmax
P
1
10
= f (tp)
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
s
10
0
tp
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
s
10
0
tp
4 Jun-27-2001
BFS481
Collector-base capacitance C
f = 1MHz
0.4
pF
0.3
cb
0.25
C
0.2
0.15
0.1
0.05
= f (VCB)
cb
Transition frequency f
V
= Parameter
CE
9
GHz
7
6
T
f
5
4
3
2
1
= f (IC)
T
10V
8V
5V
3V
2V
1V
0.7V
0
0 4 8 12 16
Power Gain G
f = 0.9GHz
= Parameter
V
CE
22
dB
18
16
G
14
12
10
8
6
, Gms = f(IC)
ma
10V
V
VCB
5V
3V
2V
1V
0.7V
22
0
0 4 8 12 16
Power Gain G
f = 1.8GHz
= Parameter
V
CE
16
dB
12
10
G
8
6
4
2
, Gms = f(IC)
ma
10V
mA
24
IC
5V
3V
2V
1V
0.7V
4
0 5 10 15
mA
IC
25
0
0 5 10 15
mA
25
IC
5 Jun-27-2001
BFS481
Power Gain G
, Gms = f(VCE):_____
ma
|S21|2 = f(VCE):--------f = Parameter
22
IC=5mA
dB
18
16
14
G
12
10
8
6
4
2
0.9GHz
0.9GHz
1.8GHz
1.8GHz
Intermodulation Intercept Point IP
(3rd order, Output, ZS=ZL=50)
= Parameter, f = 900MHz
V
CE
22
dBm
18
16
3V
2V
3
IP
14
12
10
-2
8
6
4
2
0
1V
=f(IC)
3
8V
5V
0
0 2 4 6 8
Power Gain G
V
= Parameter
CE
30
IC=5mA
dB
20
G
15
10
5
, Gms = f(f)
ma
V
VCE
10V
1V
0.7V
12
-4
0 2 4 6 8 10 12 14 16
Power Gain |S
V
= Parameter
CE
22
IC=5mA
dB
18
16
21
14
S
12
10
8
6
4
2
|2= f(f)
21
mA
I
C
10V
2V
1V
0.7V
20
0
0 0.5 1 1.5 2 2.5
GHz
0
3.5
0 0.5 1 1.5 2 2.5
f
GHz
3.5
f
6 Jun-27-2001
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