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1
2
3
4
5
6
j
A
g
查询BFS380L6供应商
NPN Silicon RF Transistor
Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
Built in 2 transistors ( TR1, TR2: die as BFR380L3
BFS380L6
TR1
12 3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TR2
456
Type Marking Pin Configuration Package
BFS380L6 FC
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
TS 96°C
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
6 V
15
15
2
80 mA
14
380 mW
C
B
P
CEO
CES
CBO
EBO
tot
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
st
thJS
150 °C
-65 ... 150
-65 ... 150
140
K/W
1
Jun-11-2003
BFS380L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 40 mA, VCE = 3 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
6 9 - V
- - 10 µA
- - 100 nA
- - 1 µA
60 130 200 -
2
Jun-11-2003
BFS380L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 40 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
IC = 8 mA, VCE = 3 V, ZS = Z
IC = 8 mA, VCE = 3 V, ZS = Z
, f = 1.8 GHz
Sopt
, f = 3 GHz
Sopt
Power gain, maximum available1)
IC = 40 mA, VCE = 3 V, ZS = Z
ZL = Z
, f = 1.8 GHz
Lopt
IC = 40 mA, VCE = 3 V, ZS = Z
ZL = Z
, f = 3 GHz
Lopt
Sopt
Sopt
,
,
f
C
C
C
F
G
T
cb
ce
eb
min
ma
- 14 - GHz
- 0.5 - pF
- 0.2 -
- 1.1 -
-
-
-
-
1.3
1.9
12
8
dB
-
-
-
-
Transducer gain
= 40 mA, VCE = 3 V, ZS = ZL = 50 ,
I
C
|S
21e
2
|
f = 1.8 GHz
I
= 40 mA, VCE = 3 V, ZS = ZL = 50 ,
C
f = 3 GHz
Third order intercept point at output2)
IP
3
VCE = 3 V, IC = 40 mA, f = 1.8 GHz,
ZS = ZL = 50
1dB Compression point at output
P
-1dB
IC = 40 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
1
G
= |S
ma
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
21e
/ S
| (k-(k²-1)
12e
1/2
)
-
-
10
6.5
dB
-
-
- 27 - dBm
- 11.5 -
3
Jun-11-2003
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