查询BFS17S供应商
NPN Silicon RF Transistor
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
C1 E2 B2
6 54
TR1
TR2
321
C2E1B1
EHA07196
BFS17S
4
5
6
3
2
1
VPS05604
Type Marking Pin Configuration Package
BFS17S MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1
SOT363
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Peak collector current, f = 10 MHz I
Total power dissipation
T
93 °C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Symbol Value Unit
15 V
25
2.5
25 mA
50
280 mW
150 °C
-65 ... 150
-65 ... 150
C
CM
P
CEO
CBO
EBO
tot
j
A
stg
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
240 K/W
Aug-20-20011
Electrical Characteristics a TA = 25°C, unless otherwise specified.
BFS17S
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-base cutoff current
= 10 V, IE = 0
V
CB
= 25 V, IE = 0
V
CB
Emitter-base cutoff current
= 2.5 V, IC = 0
V
EB
DC current gain
= 2 mA, VCE = 1 V
I
C
= 25 mA, VCE = 1 V
I
C
Collector-emitter saturation voltage
= 10 mA, IB = 1 mA
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CEsat
15 - - V
-
-
-
-
0.05
10
- - 100
20
20
-
70
150
-
- 0.1 0.4 V
µA
-
Aug-20-20012
BFS17S
A
Electrical Characteristics at T
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics
Transition frequency
I
= 2 mA, VCE = 5 V, f = 200 MHz
C
I
= 25 mA, VCE = 5 V, f = 200 MHz
C
Collector-base capacitance
V
= 5 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 5 V, f = 1 MHz
CE
Input capacitance
V
= 0.5 V, IC = 0 , f = 1 MHz
EB
Output capacitance
V
= 5 V, VBE = 0 , f = 1 MHz
CE
f
C
C
C
C
T
cb
ce
ibo
obs
1
1.3
1.4
2.5
-
-
- 0.55 0.8 pF
- 0.13 -
- 1.45 -
- - 1.5
GHz
Noise figure
I
= 2 mA, VCE = 5 V, f = 800 MHz,
C
Z
= 0
S
Transducer gain
I
= 20 mA, VCE = 5 V, ZS = ZL = 50 ,
C
f = 500 MHz
Linear output voltage
I
= 14 mA, VCE = 5 V, dim = 60 dB,
C
f
= 806 MHz, f2 = 810 MHz, ZS = ZL = 50
1
Third order intercept point
I
= 200 mA, VCE = 8 V, ZS=Z
C
Sopt
, ZL=Z
f = 900 MHz
Lopt
,
F - 3.5 5 dB
21e
3
2
|
02
- 12,7 -
- 100 - mV
- 23 - dBm
|S
V01=V
IP
Aug-20-20013
BFS17S
Total power dissipation P
300
mW
240
220
200
tot
P
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120
= f (TS)
tot
°C
T
150
S
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
0
10
-1
10
10
-6
10
-5
10
-4
10
-3
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
= f (tp)
-2
10
Permissible Pulse Load
P
totmax/PtotDC
3
10
-
totDC
/ P
2
10
totmax
P
1
10
0
s
t
0
10
p
10
10
-6
= f (tp)
-5
10
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
-3
10
-2
s
10
0
tp
Aug-20-20014
BFS17S
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
1.3
pF
1.1
1.0
0.9
cb
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Transition frequency fT = f (IC)
VCE = Parameter
3.0
GHz
2.0
T
f
1.5
1.0
0.5
10V
5V
3V
2V
1V
0.7V
0.0
0 4 8 12 16 20
V
V
CB
26
0.0
0 5 10 15 20
mA
30
IC
Aug-20-20015
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