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查询BFS17P供应商
NPN Silicon RF Transistor
BFS17P
3
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
1
VPS05161
Type Marking Pin Configuration Package
BFS17P MCs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
2
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz I
Total power dissipation
TS 55 °C
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
V
V
V
I
C
CM
P
T
T
T
R
CEO
CBO
EBO
tot
A
st
thJS
15 V
25
2.5
25 mA
50
280 mW
150 °C
-65 ... 150
-65 ... 150
340
K/W
Jul-12-20011
Electrical Characteristics a TA = 25°C, unless otherwise specified.
BFS17P
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-base cutoff current
= 10 V, IE = 0
V
CB
= 25 V, IE = 0
V
CB
Emitter-base cutoff current
= 2.5 V, IC = 0
V
EB
DC current gain
= 2 mA, VCE = 1 V
I
C
= 25 mA, VCE = 1 V
I
C
Collector-emitter saturation voltage
= 10 mA, IB = 1 mA
I
C
Symbol UnitValues
min. max.typ.
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CEsat
15 - V-
-
-
-
-
- 100-
20
20
-
70
- 0.1 0.4 V
µA
0.05
10
-
150
-
Jul-12-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFS17P
Parameter
AC characteristics
Transition frequency
= 2 mA, VCE = 5 V, f = 200 MHz
I
C
= 25 mA, VCE = 5 V, f = 200 MHz
I
C
Collector-base capacitance
= 5 V, f = 1 MHz
V
CB
Collector-emitter capacitance
= 5 V, f = 1 MHz
V
CE
Input capacitance
= 0.5 V, IC = 0 , f = 1 MHz
V
EB
Output capacitance
= 5 V, VBE = 0 , f = 1 MHz
V
CE
Noise figure
Symbol UnitValues
min. max.typ.
f
C
C
C
C
F
T
cb
ce
ibo
obs
1
1.3
- -1.45
- - 1.5
1.4
2.5
0.55- pF0.8
0.25 --
3.5- dB5
GHz
-
-
= 2 mA, VCE = 5 V, f = 800 MHz,
I
C
= 0
Z
S
Transducer gain
I
= 20 mA, VCE = 5 V, ZS = ZL = 50 ,
C
f = 500 MHz
Linear output voltage
= 14 mA, VCE = 5 V, dim = 60 dB,
I
C
f
= 806 MHz, f2 = 810 MHz, ZS = ZL = 50
1
Third order intercept point
I
= 14 mA, VCE = 5 V, ZS=Z
C
Sopt
, ZL=Z
f = 800 MHz
Lopt
,
|S
21e
V01=V
IP
3
2
|
02
- mV-100
12.7 --
- 23 - dBm
Jul-12-20013
BFS17P
Total power dissipation P
320
mW
240
tot
200
P
160
120
80
40
= f(TS)
tot
0
0 15 30 45 60 75 90 105 120
Permissible Pulse Load R
3
10
K/W
thJS
R
2
10
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
-
/ P
totmax
P
1
10
= f (tp)
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
s
10
0
tp
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
s
10
0
tp
Jul-12-20014
BFS17P
Collector-base capacitance C
f = 1MHz
1.3
pF
1.1
1.0
0.9
cb
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 4 8 12 16 20
= f (VCB)
cb
V
V
CB
26
Transition frequency f
V
= Parameter
CE
3.0
GHz
2.0
T
f
1.5
1.0
0.5
0.0
0 5 10 15 20
= f (IC)
T
mA
10V
5V
3V
2V
1V
0.7V
30
IC
Jul-12-20015
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