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g
Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio C1V/C
Low series resistance
Excellent uniformity and matching due to
(typ. 18.3)
28V
"in-line" matching assembly procedure
BB679-02V
BB679...
1 2
Type Package Configuration L
(nH) Marking
S
BB679-02V* SC79 single 0.6 K
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage ( R 5k ) V
Forward current I
Operating temperature range T
Storage temperature T
Symbol Value Unit
R
RM
F
op
st
30 V
35
20 mA
-55 ... 125
-55 ... 150
°C
1
Oct-25-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BB679...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
= 30 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 28 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V, VR = 25 V, f = 1 MHz
R
Capacitance matching1)
V
= 1 V, VR = 28 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
I
R
C
T
C
T1/CT28
C
T2/CT25
C
T/CT
-
-
43.5
33
2.55
2.4
-
-
47.5
36
2.75
2.6
10
100
51.5
38.8
2.95
2.8
16.5 18.3 20
12 13.1 14.5
- - 2 %
nA
pF
-
Series resistance
V
= 5 V, f = 470 MHz
R
1
For details please refer to Application Note 047.
r
S
- 0.6 0.8
2
Oct-25-2002
BB679...
Diode capacitance CT = (VR)
f = 1MHz
2
10
pF
CT
1
10
0
10
10
0
10
1
Normalized diode capacitance
C
(TA)/C(25°C)
1.04
25°C
1.02
/C
TA
C
1.01
1
0.99
0.98
V
VR
10
2
0.97
-40 -20 0 20 40 60
= (TA); f = 1MHz
1 V
2 V
7 V
15 V
25 V
28 V
°C
100
T
A
Temperature coefficient of the diode
capacitance
-3
10
1/°C
cc
T
-4
10
-5
10
10
T
= (VR)
Cc
0
10
1
V
V
R
10
Reverse current IR = (TA)
V
= 28 V
R
-9
10
A
-10
10
R
I
-11
10
-12
2
10
-40 -20 0 20 40 60
°C
100
T
A
3
Oct-25-2002
BB679...
Reverse current IR = (VR)
T
= Parameter
A
-9
10
A
-10
10
R
I
-11
10
-12
10
-13
10
10
0
10
1
85°C
60°C
25°C
V
Reverse voltage VBR = (TA)
I
= 5µA
R
45
V
BR
V
35
2
10
V
R
30
-40 -20 0 20 40 60
°C
100
T
A
4
Oct-25-2002
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