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Silicon Variable Capacitance Diode
For Hyperband TV / VTR tuners, Bd l
BB640
BB640...
1 2
Type Package Configuration L
(nH) Marking
S
BB640 SOD323 single 1.8 red S
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage
( R
5k )
Forward current I
Operating temperature range T
Storage temperature T
Symbol Value Unit
30 V
35
20 mA
-55 ... 150
-55 ... 150
°C
V
R
RM
F
op
stg
1
Nov-07-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BB640...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
= 30 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 28 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V, VR = 25 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
I
R
C
T
C
T1/CT28
C
T2/CT25
-
-
62
47.5
2.85
2.8
-
-
69
54.5
3.28
3.05
10
200
76
61.5
3.7
3.3
19.5 - 25
15 16.6 -
nA
pF
Capacitance matching1)
V
= 1 V, VR = 28 V, f = 1 MHz
R
Series resistance
C
= 12 pF, f = 100 MHz
T
1
For details please refer to Application Note 047.
C
T/CT
r
S
- - 2.5
- 1.15 -
%
2
Nov-07-2002
BB640...
Diode capacitance CT = (VR)
f = 1MHz
100
pF
C
90
T
80
70
60
50
40
30
20
10
0
-1 0
10
10
10
1
EHD07045
V
R
Temperature coefficient of the diode
capacitance
-3
10
1/°C
Cc
T
-4
10
-5
2
10V
10
10
T
= (VR)
Cc
0
10
1
V
V
2
10
R
Reverse current IR = (TA)
V
= 28V
R
300
pA
200
R
I
150
100
50
0
0 10 20 30 40 50 60 70 80
°C
Reverse current IR = (VR)
T
= Parameter
A
-9
10
85°C
-10
10
R
I
-11
10
-12
10
-13
100
T
A
10
0 4 8 12 16 20 24
0°C
V
V
30
R
3
Nov-07-2002
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