查询BAW56S供应商
Silicon Switching Diode
• For high-speed switching applications
• Common anode configuration
BAW56...
BAW56
BAW56T
BAW56S
BAW56U
BAW56W
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Type Package Configuration Marking
BAW56
BAW56S
BAW56T
BAW56U
BAW56W
SOT23
SOT363
SC75
SC74
SOT323
common anode
double common anode
common anode
double common anode
common anode
A1s
A1s
A1s
A1s
A1s
1
Jun-03-2003
Maximum Ratings at TA = 25°C, unless otherwise specified
BAW56...
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Surge forward current, t = 1 µs I
Total power dissipation
BAW56, T
BAW56S, T
BAW56T, T
BAW56U, T
BAW56W, T
≤ 31°C
S
≤ 85°C
S
≤ 104°C
S
≤ 90°C
S
≤ 103°C
S
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Symbol Value Unit
80 V
85
200 mA
4.5 A
mW
P
R
RM
F
FS
tot
330
250
250
250
250
j
stg
150 °C
-65 ... 150
Symbol Value Unit
Junction - soldering point1)
BAW56
BAW56S
BAW56T
BAW56U
BAW56W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
R
thJS
360
260
185
240
190
K/W
2
Jun-03-2003
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
BAW56...
Breakdown voltage
= 100 µA
I
(BR)
Reverse current
= 70 V
V
R
= 25 V, TA = 150 °C
V
R
= 70 V, TA = 150 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
I
F
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
V
I
V
R
C
(BR)
F
T
85 - - V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.15
30
50
715
855
1000
1200
1250
µA
mV
- - 2 pF
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured at IR = 1mA,
F
R
= 100 Ω
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,
R
Ι
F
Oscillograph
Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF
EHN00019
t
rr
- - 4 ns
= 50Ω
i
3
Jun-03-2003
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