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Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
BAT14-03W
BAT14...
1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration L
(nH) Marking
S
BAT14-03W SOD323 single 1.8 O/white
Maximum Ratings at T
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
T
85 °C
S
P
Junction temperature T
Operating temperature range T
Storage temperature T
R
F
tot
o
st
4 V
90 mA
100 mW
150 °C
-55 ... 125
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
R
thJS
1
690
Feb-03-2003
K/W
BAT14...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
= 10 µA
I
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
AC Characteristics
Diode capacitance
V
= 0 , f = 1 MHz
R
Differential forward resistance
= 10mA / 50mA
I
F
V
V
C
R
(BR)
F
T
F
4 - - V
0.36
0.48
0.43
0.55
0.52
0.66
- 0.22 0.35 pF
- 5.5 -
2
Feb-03-2003
BAT14...
Diode capacitance CT = (VR)
f = 1MHz
0.5
pF
0.4
0.35
T
C
0.3
0.25
0.2
0.15
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Reverse current IR = (VR)
= Parameter
T
A
1
10
µA
TA =125°C
0
10
R
I
-1
10
-2
10
-3
V
5
V
F
10
1 1.5 2 2.5 3 3.5 4 4.5
TA =85°C
TA =25°C
V
V
5.5
R
Forward current IF = (VF)
2
10
mA
1
10
F
I
0
10
-1
10
-2
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-40°C
25°C
85°C
125°C
V
1
V
F
3
Feb-03-2003
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