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FEATURES
● Glass passivated junction
● High current diverting capability 250A
● Low capacitance, less than 200pF
APPLICATION
● Bi-directional device for telephone and line card protection
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
25.4 min
9.400
+0.127
-0.254
Ø5.080
+0.127
-0.254
25.4 min
Ø1.016±0.050
T10B
Voltage
Holding
Current Option
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
ORDERING INFORMATION
● UL recognized
● Automatic reset
● Does not degrade
ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm
SYMBOL
P
Ipp
Itsm
di/dt
T stg
Tj
T
I
PARAMETER
Power dissipation on infinite heatsink
Peak Pulse Current
Non-repetitive surge peak on-state current
Critical rate of rise of on-state current
Storage and operating junction
Temperature range
Maximum lead temperature for soldering
during 10s at 4mm from case
Tamb = 50°C
10x1000µsec
10/700 1.5KV
8-20 us expo
tp = 20 ms
Non repetitive
VALUE
5
100
125
250
50
100
-40 to 150
150
230
UNIT
W
A
A
A/us
°C
°C
°C
THERMAL RESISTANCES
SYMBOL
Rth(j-i)
Rth(j-a)
PARAMETER
Junction-leads on infinite heatsink
Junction-ambient on printed circuit
L = 10mm
VALUE
20
75
UNIT
°C/W
°C/W
All parameters are tested using Fet Test ™ Model 3600
All dimensions in mm
DEVICE
TYPE
T10B035
T10B065
T10B120
T10B140
T10B200
T10B230
T10B270
I
RM
@ VRM
max
µAV
32
55
110
120
170
200
230
2
2
2
2
2
2
2
I
R
@ VR
max
µ
AV
35
65
120
140
200
230
270
50
50
50
50
50
50
50
VBO @ IBO
max
VmA
800
800
800
800
800
800
800
55
80
160
200
265
300
350
I
H
min
mA
150
150
150
150
150
150
150
C
typ
pF
180
160
140
140
130
120
120
T10B series Sibod
™
PARAMETER
Stand-off Voltage
Breakdown Voltage
Holding Current
Continuous Reverse Voltage
SYMBOL
V
RM
V
BR
I
H
V
R
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