Littelfuse SRDA05 User Manual
TVS Diode Arrays (SPA
I/O
I/O
3
4
Ref
Ref
2
2
RoHS
GREEN
®
Diodes)
Lightning Surge Protection- SRDA05 Series
SRDA05 Series 8pF 30A Diode Array
Pinout
1
1
2
1
3
1
2
Ref
8
I/O
7
6
I/O
Ref
54
Pb
Description
The SRDA05 integrates low capacitance rail-to-rail diodes
with an additional zener diode to protect I/O pins against
ESD and lightning induced surge events. This robust device
can safely absorb up to 30A per IEC61000-4-5 (tp=8/20μs)
without performance degradation and a minimum ±30kV
ESD per IEC61000-4-2 international standard. Its low
loading capacitance makes it ideal for high-speed interface
protection.
Features
• Lightning protection,
IEC61000-4-5, 30A
(8/20µs)
• EFT, IEC61000-4-4, 50A
(5/50ns)
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• Low clamping voltage
• Low leakage current
• SOIC-8 surface mount
package (JEDEC MS-012)
SOIC-8 (Top View)
Note: Pinout diagrams above shown as device footprint on circuit board.
Functional Block Diagram
I/O 1
I/O 4
Ref 1
Ref2
I/O 2
I/O 3
Additional Information
Datasheet
Resources
Samples
Applications
• Tertiary (IC Side)
Protection:
- T1/E1/T3/E3
- HDSL/SDSL
- Ethernet
• RS232, RS485
Application Example
R Tip
R Ring
T1/E1/T3/E3
Transceiver
T Tip
SRDA05-4
1
• Video Line Protection
• Security Cameras
• Storage DVRs
• Network Equipment
• Instrumentation, Medical
Equipment
58
4
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
T Ring
T1/E1/T3/E3 Interface Protection
TVS Diode Arrays (SPA
0.01
0.1
1
10
0.11 10 1001000
Pulse Duration-tp(µS)
Peak Pulse Power-P
pk
(kW)
0.00.5 1.01.5 2.02.5 3.03.5 4.04.5 5.0
Bias Voltage (V)
Normalized Capacitance (pF) Cj(VR)/Cj(VR=0)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.5
0.8
0.6
0.4
0.2
0.0
®
Diodes)
Lightning Surge Protection- SRDA05 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
P
pk
I
pp
T
op
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Peak Pulse Power (8/20µs) 600 W
Peak Pulse Current (8/20µs) 30 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
Electrical Characteristics (TOP = 25°C)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Stand-Off Voltage V
Reverse Leakage Current I
Reverse Breakdown Voltage V
Clamping Voltage, Line-Ground
Clamping Voltage, Line-Ground
Clamping Voltage, Line-Ground
Clamping Voltage, Line-Ground
1
V
1
V
1
V
1
V
Dynamic Resistance, Line-Ground
ESD Withstand Voltage
Diode Capacitance
1
Parameter is guaranteed by design and/or device characterization.
1
1
1
R
V
C
C
I/O-GND
RWM
R
BR
C
C
C
C
DYN
ESD
I/O-I/O
IEC61000-4-2 (Contact Discharge) ±30 - - kV
IEC61000-4-2 (Air Discharge) ±30 kV
IT≤1µA - - 5.0 V
VR= 5V - - 10 µA
It = 1mA 6 - - V
IPP= 1A, tp=8/20 µs - 9.2 - V
IPP= 2A, tp=8/20 µs - 10.0 - V
IPP= 10A, tp=8/20 µs - 14.5 - V
IPP= 25A, tp=8/20 µs - 21.0 - V
( VC2-VC1)/(I
Reverse Bias=0V - 4.0 - pF
Reverse Bias=0V - 8.0 - pF
Thermal Information
Parameter Rating Units
SOIC Package 170 °C/W
Operating Temperature Range –40 to 125 °C
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
) - 0.8 -
PP2-IPP1
260 °C
SP4040
W
Normalized Capacitance vs. Bias Voltage
Non-Repetitive Peak Pulse Power vs. Pulse Time
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 04/24/13
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