
TVS Diode Arrays (SPA
SOT-143-4
GND
I/O 1
Vcc
I/O 2
®
Diodes)
Lightning Surge Protection- SR70 Series
SR70 Series 70V 40A Diode Array
Pinout
Pb
Description
The SR70 consists of four, low capacitance, rail-to-rail
diodes that provide protection against ESD and lightning
surge events.These robust diodes can safely absorb up to
40A (t
=8/20μs) and repetitive ESD strikes at the maximum
P
level (Level 4) specified in the IEC 61000-4-2 international
standard without performance degradation.
Its low loading capacitance makes it ideal for protecting
high-speed data lines such as VDSL and VDSL2.
Features
• ESD, IEC61000-4-2 ,
±30kV contact discharge,
±30kV air discharge
• EFT, IEC61000-4-4, 80A
(t
=5/50ns)
p
• Lightning protection,
IEC61000-4-5, 40A
(t
=8/20µs)
p
• Low capacitance of 2.0pF
(TYP) per I/O
• Low clamp voltage
• Small SOT143 (JEDEC TO-
253) packaging
Functional Block Diagram
Additional Information
Datasheet
Resources
Samples
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life
saving applications unless otherwise expressly indicated.
Applications
• xDSL Lines
• Video Lines
• Customer Premises
Application Example
I/O
I/O
Equipment
• 10/100/1000 Ethernet
1
2
V
CC
4
3
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13

TVS Diode Arrays (SPA
DC Bias (V)
Capacitance (pF)
0.00
0.50
1.00
1.50
2.00
2.50
0.00.5 1.01.5 2.02.5 3.03.5 4.04.5 5.0
I/O -GND
I/O
-I/O
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
®
Diodes)
Lightning Surge Protection- SR70 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff Voltage V
Reverse Leakage Current I
Clamp Voltage
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Peak Current (tp=8/20μs) 40.0 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
=25ºC)
OP
Parameter Symbol Test Conditions Min Typ Max Units
RWM
LEAK
VR=70V 5 µA
IPP=1A, tp=8/20µs, Fwd 1. 4 V
1
1
1
V
C
I/O-GND
C
V
C
DYN
ESD
I/O-I/O
I
=10A, tp=8/20µs, Fwd 4.7 V
PP
I
=30A, tp=8/20µs, Fwd 12 V
PP
(VC2-VC1)/(I
IEC61000-4-2 (Contact) ±30 kV
IEC61000-4-2 (Air) ±30 kV
Reverse Bias=0V, f=1MHz 2.0 3.0 pF
Reverse Bias=0V, f=1MHz 1. 3 2.0 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
70 V
) 0.35 Ω
PP2-IPP1
260 °C
Note: 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Bias
Pulse Waveform
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 04/24/13