Littelfuse SP6003 User Manual

TVS Diode Arrays (SPA

5

8

1

4

1

6

7

12

GND

GND

SP6003-04UTG-1

SP6003-06UTG-1

µDFN-08

µDFN-12

Cd Cd

18

Cd Cd

27

Cd Cd

36

Cd Cd

45

Cd Cd

1

12

Cd Cd

2

11

Cd Cd

3

10

Cd Cd

4

9

Cd Cd

5

8

Cd Cd

67

SP6003-04UTG-1

SP6003-06UTG-1

Dx: SP6003-04 Silicon Protection Array

®

Diodes)

ESD and EMI Filter Devices - SP6003 Series

SP6003 Series 7pF EMI Filter Array with ESD Protection

Description

Littelfuse’s SP6003 integrates 4 and 6 EMI filters (C-R-C)
into a small, low-profile µDFN package with each filter
providing greater than -20dB attenuation at 1GHz.
Additionally, each I/O is capable of shunting ±12kV ESD
strikes (IEC61000-4-2, contact discharge) away from
sensitive electronic components. The performance of this
small, slim design makes it extremely suitable for mobile
handsets, PDA’s, and notebook computers.

Pinout

Features

• EMI ltering of

frequencies from
800MHz to 3GHz

• Greater than -20dB

attenuation (TYP) at 1GHz

RoHS

Pb

GREEN

• ESD, IEC61000-4-2,

±12kV contact, ±15kV air

• Small, low-prole μDFN

(JEDEC MO-229) package
(TYP 0.5mm height)

SP6003

Functional Block Diagram

©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com for current information.

Applications

• Keypad Interface for

Portable Electronics

• LCD and Camera Display

Interfaces for Handsets

• Connector Interfaces for

Handsets

Application Example

1

Revision: November 29, 2012

Input

Outside World

4

5

GND

1

8

SP6003-04UTG-1 (µDFN)

• PDA’s

• Digital Cameras

• Notebook Computers

LCD Module

Controller

D1
D2
D3
D4

Signal
Ground

SP6003 Series

TVS Diode Arrays (SPA

®

Diodes)

ESD and EMI Filter Devices - SP6003 Series

Absolute Maximum Ratings

Symbol Parameter Value Units

T

OP

T

STOR

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.

Electrical Characteristics (T

Reverse Standoff Voltage V

Breakdown Voltage V

Reverse Leakage Current I

Resistance R

Diode Capacitance

Line Capacitance

ESD Withstand Voltage

Cutoff Frequency

Notes: 1 Parameter is guaranteed by design and/or device characterization.

2 Total line capacitance is two times the diode capacitance (CD).

3 50Ω source and 50Ω load termination

Operating Temperature -40 to 125 °C

Storage Temperature -55 to 150 °C

=25ºC)

OP

Parameter Symbol Test Conditions Min Typ Max Units

RWM

BR

LEAK

A

1,2

1,2

1

3

C

D

C

L

V

ESD

F

-3dB

IEC61000-4-2 (Contact Discharge) ±12 kV

IEC61000-4-2 (Air Discharge) ±15 kV

Above this frequency, appreciable

IR=1mA 7. 0 V

V

=5V 0.1 1. 0 µA

RWM

IR=10mA 80 100 120 Ω

VR=2.5V,f=1MHz 7 pF

VR=2.5V,f=1MHz 11 14 17 pF

attenutation occurs

Thermal Information

Parameter Rating Units

Storage Temperature Range -55 to 150 °C

Maximum Junction Temperature 150 °C

Maximum Lead Temperature (Soldering 10s) 260 °C

5.0 V

250 MHz

Analog Crosstalk (S41)Insertion Loss (S21)

0

-5

-10

-15

-20

Attenuation (dB)

-25

-30

-35

-40

-45

-50

10 1001000

Frequency (MHz)

Attenuation (dB)

-105

-120

-135

0

-15

-30

-45

-60

-75

-90

10 1001000

Frequency (MHz)

SP6003 Series

2

Revision: November 29, 2012

Please refer to http://www.littelfuse.com for current information.

Specifications are subject to change without notice.

©2012 Littelfuse, Inc.