Littelfuse SP3031 User Manual
TVS Diode Arrays (SPA
1
2
1
2
RoHS
GREEN
®
Diodes)
Low Capacitance ESD Protection - SP3031 Series
SP3031 Series 0.8pF 10kV unidirectional Discrete TVS
Description
The SP3031 includes low capacitance rail to rail diodes
with an additional Zener diode to provide protection for
electronic equipment that may experience destructive
electrostatic discharges (ESD). These robust diodes can
safely absorb repetitive ESD strikes above the maximum
level specified in the IEC61000-4-2 international standard
without performance degradation. The low loading
capacitance makes it ideal for protecting high speed
datalines.
Pinout
Features
• ESD protection of ±10kV
contact discharge,
±15kV air discharge,
(IEC61000-4-2)
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning protection,
IEC61000-4-5, 5A
(t
=8/20µs)
p
Pb
• Low capacitance of 0.8pF
@ V
=0V
R
• Low leakage current of
1μA at 5V
• 0402 small footprint
available
Functional Block Diagram
Additional Information
Datasheet
Resources
Samples
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
Applications
• USB 2.0, Ethernet
• MHL/MIPI/MDDI
• HDMI, Display Port,
eSATA
• Set Top Boxes, Game
Consoles
USB2.0 Application Example
USB2.0 Port
V
BUS
D+
D-
SP3031 (x2)
*Package is s hown as transparent
Signal GND
• Smart Phones
• External Storage
• Ultrabooks, Notebooks
• Tablets, eReaders
USB Controller
SP1003
IC
TVS Diode Arrays (SPA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01.0 2.03.0 4.05.0
Capacitance (pF)
DC Bias (V)
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
-5
Frequency (MHz)
-10
-15
-20
-25
0
-30
-35
10
100
1000
Attenuation (dB)
TLP Voltage (V)
TLP Current (A)
®
Diodes)
Low Capacitance ESD Protection - SP3031 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff Voltage V
Reverse Breakdown Voltage V
Reverse Leakage Current I
Clamp Voltage
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note: 1. Parameter is guaranteed by design and/or device characterization.
Peak Current (tp=8/20μs) 5.0 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
=25ºC)
OP
Parameter Symbol Test Conditions Min Typ Max Units
RWM
BR
LEAK
1
1
1
C
V
V
I/O-I/O
C
DYN
ESD
1R=1mA 6.0 V
VR=5V with 1pin at GND 1 µA
IPP=1A, tp=8/20µs, Fwd 6.9 V
=2A, tp=8/20µs, Fwd 7. 5 V
I
PP
(VC2-VC1)/(I
IEC61000-4-2 (Contact) ± 10 kV
IEC61000-4-2 (Air) ±15 kV
Reverse Bias=0V 0.8 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
5.0 V
) 0.6 Ω
PP2-IPP1
260 °C
SP3031
Insertion Loss (S21) I/O to GND
Pulse Waveform
Capacitance vs. Reverse Voltage
Transmission Line Pulsing(TLP) Plot
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 04/24/13
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