Littelfuse SP3021 User Manual
TVS Diode Arrays (SPA
1
2
1
2
USB Port
USB Controller
Signal Ground
IC
*Packages are shown as transparent
SP1003
D+
D-
SSTX+
SSTX-
SSRX+
SSRX-
V
BUS
SP3021x6
Pin 1
RoHS
GREEN
®
Diodes)
Low Capacitance ESD Protection - SP3021 Series
SP3021 Series 0.5pF 8kV bidirectional Discrete TVS
Description
The SP3021 includes back-to-back TVS diodes fabricated
in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes up to the
maximum level specified in the IEC61000-4-2 international
standard without performance degradation. The back-toback configuration provides symmetrical ESD protection for
data lines when AC signals are present.
Pinout
Features
• ESD protection of ±8kV
contact discharge,
±15kV air discharge,
(IEC61000-4-2)
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning protection,
IEC61000-4-5, 2A
(t
=8/20µs)
p
Pb
• Low capacitance of 0.5pF
@ V
=0V
R
• Low leakage current of
1μA at 5V
• 0402 small footprint
available
Functional Block Diagram
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
Resources
Samples
Applications
• USB 3.0/USB 2.0
• MHL/MIPI/MDDI
• HDMI, Display Port,
eSATA
• Set Top Boxes, Game
Consoles
USB3.0 Application Example
• Smart Phones
• External Storage
• Ultrabooks, Notebooks
• Tablets, eReaders
TVS Diode Arrays (SPA
-5
-10
-15
-20
-25
0
-30
-35
Attenuation (dB)
Frequency (MHz)
10
100
1000
Capacitance (pF)
DC Bias (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
012345
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
TLP Voltage (V)
TLP Current (A)
®
Diodes)
Low Capacitance ESD Protection - SP3021 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff Voltage V
Reverse Breakdown Voltage V
Reverse Leakage Current I
Clamp Voltage
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note: 1. Parameter is guaranteed by design and/or device characterization.
Peak Current (tp=8/20μs) 2.0 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
=25ºC)
OP
Parameter Symbol Test Conditions Min Typ Max Units
RWM
BR
LEAK
1
1
1
V
C
DYN
V
ESD
C
D
1R=1mA 7. 0 V
VR=5V 1 µA
IPP=1A, tp=8/20µs, Fwd 13.1 V
=2A, tp=8/20µs, Fwd 14.7 V
I
PP
(VC2-VC1)/(I
IEC61000-4-2 (Contact) ±8 kV
IEC61000-4-2 (Air) ±15 kV
Reverse Bias=0V 0.5 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
5.0 V
) 1. 6 Ω
PP2-IPP1
260 °C
SP3021
Capacitance vs. Bias Voltage
Pulse Waveform
Insertion Loss (S21) I/O to GND
Transmission Line Pulsing(TLP) Plot
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 04/24/13
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