The SP3011 integrates six channels of ultra-low capacitance
rail-to-rail diodes and an additional zener diode to provide
protection for USB 3.0 ports that may experience
destructive electrostatic discharges (ESD). This high
density array can safely absorb repetitive ESD strikes at the
maximum level specified in the IEC61000-4-2 international
standard (Level 4, ±8kV contact discharge) without
performance degradation. It’s extremely low loading
capacitance makes it ideal for protecting any high-speed
signal pins.
Pinout
8
7
*Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the
opposite pin with the PCB trace.
14
1
Features
• ESD, IEC61000-4-2, ±8kV
contact, ±15kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning, IEC61000-4-5,
3A (8/20μs)
• Low capacitance of 0.4pF
(TYP) per I/O
Pb
• Low leakage current of
0.1μA (TYP) at 5V
• Small form factor μDFN
(JEDEC MO-229) package
saves board space
Functional Block Diagram
Pin 11Pin 8
Pin 13
Pin 14
Pin 9Pin 12
GND
(Pin 10)
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Peak Current (tp=8/20μs)3.0A
Operating Temperature–40 to 125°C
Storage Temperature–55 to 150°C
Electrical Characteristics (T
OP
=25ºC)
ParameterSymbolTest ConditionsMinTypMaxUnits
Reverse Standoff VoltageV
Reverse Leakage CurrentI
Clamp Voltage
1
Dynamic ResistanceR
ESD Withstand Voltage
Diode Capacitance
Note: 1 Parameter is guaranteed by design and/or device characterization.
1
1
V
C
I/O-GND
RWM
LEAK
V
DYN
ESD
VR=5V, Any I/O to GND0.10.5µA
IPP=1A, tp=8/20µs, Fwd11. 0V
C
IPP=2A, tp=8/20µs, Fwd12.5V
IEC61000-4-2 (Contact)±8kV
IR ≤ 1µA6.0V
(VC2-VC1) / (I
)1. 5Ω
PP2-IPP1
IEC61000-4-2 (Air)±15kV
Reverse Bias=0V0.4pF
Insertion Loss (S21) I/O to GNDCapacitance vs. Bias Voltage
Clamping Voltage vs. I
PP
Pulse Waveform
Specifications are subject to change without notice.