Littelfuse SP3011 User Manual

TVS Diode Arrays (SPA

RoHS

GREEN

USB ControllerUSB Port

Ou

®

Diodes)

Low Capacitance ESD Protection - SP3011 Series

SP3011 Series 0.40pF Diode Array for uSb 3.0

Description

The SP3011 integrates six channels of ultra-low capacitance
rail-to-rail diodes and an additional zener diode to provide
protection for USB 3.0 ports that may experience
destructive electrostatic discharges (ESD). This high
density array can safely absorb repetitive ESD strikes at the
maximum level specified in the IEC61000-4-2 international
standard (Level 4, ±8kV contact discharge) without
performance degradation. It’s extremely low loading
capacitance makes it ideal for protecting any high-speed
signal pins.

Pinout

8

7

*Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the
opposite pin with the PCB trace.

14

1

Features

• ESD, IEC61000-4-2, ±8kV
contact, ±15kV air

• EFT, IEC61000-4-4, 40A
(5/50ns)

• Lightning, IEC61000-4-5,
3A (8/20μs)

• Low capacitance of 0.4pF
(TYP) per I/O

Pb

• Low leakage current of

0.1μA (TYP) at 5V

• Small form factor μDFN
(JEDEC MO-229) package
saves board space

Functional Block Diagram

Pin 11 Pin 8

Pin 13
Pin 14

Pin 9Pin 12

GND
(Pin 10)

Additional Information

Datasheet

Life Support Note:

Not Intended for Use in Life Support or Life Saving Applications

The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.

Resources

Samples

Applications

• Notebooks

• External Storage

• Digital Camcorder

• MP3/PMP Player

Application Example

V

BUS

SSTX+

SSTX-

tside

World

SSRX+

SSRX-

GND

D+

D-

• Desktops

• Ultramobile PC

• Smartphone

• Set Top Box (DVR/PVR)

IC

SP3011-06UTG

Signal GND

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13

TVS Diode Arrays (SPA

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

110%

0.05.0 10.0 15.0 20.0 25.0 30.0

Time (μs)

Percent of I

PP

0.0

0.1

0.2

0.3

0.4

0.5

0.0 1.0 2.0 3.0 4.0 5.0

Bias Voltage (V)

Capacitance (pF)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

1.01.5 2.02.5 3.0

Peak Pulse Current - IPP (A)

Clamp Voltage (V

C

)

-30

-25

-20

-15

-10

-5

0

10 100 1000 10000

Frequency (MHz)

Attenuation (dB)

®

Diodes)

Low Capacitance ESD Protection - SP3011 Series

Absolute Maximum Ratings

Symbol Parameter Value Units

I

PP

T

OP

T

STOR

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Peak Current (tp=8/20μs) 3.0 A

Operating Temperature –40 to 125 °C

Storage Temperature –55 to 150 °C

Electrical Characteristics (T

OP

=25ºC)

Parameter Symbol Test Conditions Min Typ Max Units

Reverse Standoff Voltage V

Reverse Leakage Current I

Clamp Voltage

1

Dynamic Resistance R

ESD Withstand Voltage

Diode Capacitance

Note: 1 Parameter is guaranteed by design and/or device characterization.

1

1

V

C

I/O-GND

RWM

LEAK

V

DYN

ESD

VR=5V, Any I/O to GND 0.1 0.5 µA

IPP=1A, tp=8/20µs, Fwd 11. 0 V

C

IPP=2A, tp=8/20µs, Fwd 12.5 V

IEC61000-4-2 (Contact) ±8 kV

IR ≤ 1µA 6.0 V

(VC2-VC1) / (I

) 1. 5 Ω

PP2-IPP1

IEC61000-4-2 (Air) ±15 kV

Reverse Bias=0V 0.4 pF

Insertion Loss (S21) I/O to GNDCapacitance vs. Bias Voltage

Clamping Voltage vs. I

PP

Pulse Waveform

Specifications are subject to change without notice.

© 2013 Littelfuse, Inc.

Revised: 04/24/13