Littelfuse SP3003 User Manual

TVS Diode Arrays (SPA
NC
V
CC
I/O 1
GND
I/O 2
I/O 4
V
CC
I/O 3
I/O 1
GND
I/O 2
SP3003-04X/J
SP3003-02X/J
SP3003-04J/XTG
SP3003-04ATG
SP3003-02J/XTG SP3003-08ATG
1
2
3
6
5
4
1
2
3
4
5
10
9
8
7
6
1
2
3
1
2
3
4
5
10
9
8
7
6
5
4
I/O 1
I/O 2
V
NC
GND
CC
NC
NC
NC
I/O 3
I/O 4
SP3003-04A
I/O 1
I/O 2
NC
I/O 3
I/O 4
SP3003-08A
GND
I/O 8
I/O 7
I/O 6
I/O 5
RoHS
GREEN
®
Diodes)
Low Capacitance ESD Protection - SP3003 Series
SP3003 Series 0.65pF Diode Array
Pinout
SP3003-02UTG
(AEC-Q101 qualified)
Pb
Description
The SP3003 has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high speed signal pins such as HDMI, DVI, USB2.0, and IEEE 1394.
• ESD protection of ±8kV
contact discharge, ±15kV air discharge, (IEC61000-4-2)
• EFT protection, IEC61000-4-4, 40A (5/50ns)
• Lightning Protection,
IEC61000-4-5, 2.5A (8/20µs)
• Low capacitance of
0.65pF (TYP) per I/O
• Low leakage current of
0.5μA (MAX) at 5V
• Complete line of small
packaging helps save board space (SC70, SOT553, SOT563, MSOP10, µDFN-6L)
• AEC-Q101 qualied (µDFN package)
Functional Block Diagram
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/20/13
Resources
SP3003-02UTG
Samples
Applications
• LCD/ PDP TVs
• DVD Players
• Desktops
• MP3/ PMP
• Set Top Boxes
• Mobile Phones
• Notebooks
• Computer Peripherals
• Digital Cameras
Application Example
*Package is shown as transparentDVI/ HDMI Port
D2+
GND
D2-
Vcc/NC
D1+
GND
D1-
D0+
GND
D0-
CLK+
GND
CLK-
Vcc/NC
GND
GND
IC
Signal GND
A single, 4 channel SP3003-04 device can be used to protect four (4) of the data lines in a HDMI/DVI interface so two (2) SP3003-04 devices provide protection for all eight (8) TMDS lines.
TVS Diode Arrays (SPA
®
Diodes)
Low Capacitance ESD Protection - SP3003 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (T
Reverse Standoff Voltage V
Reverse Leakage Current I
Clamp Voltage
ESD Withstand Voltage
Diode Capacitance
Diode Capacitance
Note: 1. Parameter is guaranteed by design and/or device characterization.
Peak Current (tp=8/20μs) 2.5 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
=25ºC)
OP
Parameter Symbol Test Conditions Min Typ Max Units
RWM
LEAK
1
1
1
1
V
C
I/O-GND
C
V
C
ESD
I/O-I/O
IR ≤ 1µA 6 V
VR=5V 0.5 µA
IPP=1A, tp=8/20µs, Fwd 10.0 12.0 V
IPP=2A, tp=8/20µs, Fwd 11. 8 15.0 V
IEC61000-4-2 (Contact) ±8 kV
IEC61000-4-2 (Air) ±15 kV
Reverse Bias=0V 0.7 0.8 0.95 pF
Reverse Bias=1.65V 0.55 0.65 0.8 pF
Reverse Bias=0V 0.35 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s)
260 °C
1
0
-1
-2
-3
-4
-5
-6
Insertion Loss [dB]
-7
-8
-9
-10
1.E+06 1.E+07 1.E+08 1.E+09 1.E+10
Frequency [Hz]
Capacitance vs. Bias VoltageInsertion Loss (S21) I/O to GND
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
I/O Capacitance (pF)
0.60
0.55
0.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCC = 3.3V
I/O DC Bias (V)
VCC = Float
= 5V
V
CC
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 08/20/13
TVS Diode Arrays (SPA
t
R
R
o
C
e
T
L
T
P
®
Diodes)
Low Capacitance ESD Protection - SP3003 Series
Capacitance vs. Frequency
1.4E-12
1.2E-12
1E-12
8E-13
6E-13
Capacitance [F]
4E-13
2E-13
0
1.E+06
1.E+07 1.E+08 1.E+09
Frequency [Hz]
Soldering Parameters
Reflow Condition Pb – Free assembly
- Temperature Min (T
Pre Heat
- Temperature Max (T
- Time (min to max) (ts) 60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL) to peak
T
to TL - Ramp-up Rate 3°C/second max
S(max)
Reflow
- Temperature (TL) (Liquidus) 217°C
- Temperature (tL) 60 – 150 seconds
Peak Temperature (TP) 260
Time within 5°C of actual peak Temperature (tp)
Ramp-down Rate 6°C/second max
Time 25°C to peak Temperature (TP) 8 minutes Max.
Do not exceed 260°C
) 150°C
s(min)
) 200°C
s(max)
3°C/second max
+0/-5
°C
20 – 40 seconds
Product Characteristics
Lead Plating
Lead Material Copper Alloy
Lead Coplanarity 0.0004 inches (0.102mm)
Substitute Material
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
T
P
T
L
T
S(max)
Temperature
T
S(min)
25
Matte Tin (SC70-x, MSOP-10) Pre-Plated
Frame (SOT5x3, µDFN-6)
Silicon
t
P
Ramp-up
amp-up
t
L
PreheatPrehea
t
S
time to peak temperature
Critical Zone
ritical Zon
T
L to TP
to
Ramp-down
amp-d
Time
© 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/20/13
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