The SP3003 has ultra low capacitance rail-to-rail diodes with
an additional zener diode fabricated in a proprietary silicon
avalanche technology to protect each I/O pin providing a
high level of protection for electronic equipment that may
experience destructive electrostatic discharges (ESD). These
robust diodes can safely absorb repetitive ESD strikes at the
maximum level specified in the IEC 61000-4-2 international
standard (Level 4, ±8kV contact discharge) without
performance degradation. Their very low loading capacitance
also makes them ideal for protecting high speed signal pins
such as HDMI, DVI, USB2.0, and IEEE 1394.
Features
• ESD protection of ±8kV
contact discharge,
±15kV air discharge,
(IEC61000-4-2)
• EFT protection,
IEC61000-4-4, 40A
(5/50ns)
• Lightning Protection,
IEC61000-4-5, 2.5A
(8/20µs)
• Low capacitance of
0.65pF (TYP) per I/O
• Low leakage current of
0.5μA (MAX) at 5V
• Complete line of small
packaging helps save
board space (SC70,
SOT553, SOT563,
MSOP10, µDFN-6L)
• AEC-Q101 qualied
(µDFN package)
Functional Block Diagram
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
A single, 4 channel SP3003-04 device can be used to
protect four (4) of the data lines in a HDMI/DVI interface
so two (2) SP3003-04 devices provide protection for all
eight (8) TMDS lines.
TVS Diode Arrays (SPA
®
Diodes)
Low Capacitance ESD Protection - SP3003 Series
Absolute Maximum Ratings
SymbolParameterValueUnits
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff VoltageV
Reverse Leakage CurrentI
Clamp Voltage
ESD Withstand Voltage
Diode Capacitance
Diode Capacitance
Note: 1. Parameter is guaranteed by design and/or device characterization.
Peak Current (tp=8/20μs)2.5A
Operating Temperature–40 to 125°C
Storage Temperature–55 to 150°C
=25ºC)
OP
ParameterSymbolTest ConditionsMinTypMaxUnits
RWM
LEAK
1
1
1
1
V
C
I/O-GND
C
V
C
ESD
I/O-I/O
IR ≤ 1µA6V
VR=5V0.5µA
IPP=1A, tp=8/20µs, Fwd10.012.0V
IPP=2A, tp=8/20µs, Fwd11. 815.0V
IEC61000-4-2 (Contact)±8kV
IEC61000-4-2 (Air)±15kV
Reverse Bias=0V0.70.80.95pF
Reverse Bias=1.65V0.550.650.8pF
Reverse Bias=0V0.35pF
Thermal Information
ParameterRatingUnits
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature
(Soldering 20-40s)
260°C
1
0
-1
-2
-3
-4
-5
-6
Insertion Loss [dB]
-7
-8
-9
-10
1.E+061.E+071.E+081.E+091.E+10
Frequency [Hz]
Capacitance vs. Bias VoltageInsertion Loss (S21) I/O to GND
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
I/O Capacitance (pF)
0.60
0.55
0.50
0.00.51.01.52.02.53.03.54.04.55.0
VCC = 3.3V
I/O DC Bias (V)
VCC = Float
= 5V
V
CC
Specifications are subject to change without notice.