The SP3001 has ultra low capacitance rail-to rail diodes with
an additional zener diode fabricated in a proprietary silicon
avalanche technology to protect each I/O pin providing a
high level of protection for electronic equipment that may
experience destructive electrostatic discharges (ESD). These
robust diodes can safely absorb repetitive ESD strikes at the
maximum level specified in the IEC 61000-4-2 international
standard (Level 4, ±8kV contact discharge) without
performance degradation. Their very low loading capacitance
also makes them ideal for protecting high speed signal pins
such as HDMI, DVI, USB2.0, and IEEE 1394.
Features
• Low capacitance of
0.65pF (TYP) per I/O
• ESD protection of ±8kV
contact discharge, ±15kV
air discharge,
(IEC61000-4-2)
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Resources
Samples
Applications
• Computer Peripherals
• Mobile Phones
• PDA’s
• Digital Cameras
Application Example
+5V
D2+
D2-
D1+
D1-
HDMI
or DVI
Interface
D0+
D0-
Clk+
Clk-
6 5 4
SP300x-04
1 2 3
IC
6 5 4
SP300x-04
1 2 3
Gnd
D2+
Gnd
D2-
D1+
Gnd
D1-
HDMI
or DVI
Connector
D0+
Gnd
D0-
Clk+
Gnd
Clk-
• Network Hardware/Ports
• Test Equipment
• Medical Equipment
A single 4 channel SP300x-04
device can be used to protect
four of the data lines in a
HDMI/DVI interface. Two (2)
SP300x-04 devices provide
protection for the main data
lines. Low voltage ASIC
HDMI/DVI drivers can also be
protected with the SP300x-04,
the +V
pins on the SP300x-04
CC
can be substituted with a
suitable bypass capacitor or in
some backdrive applications the
+V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff VoltageV
Reverse Leakage CurrentI
Clamp Voltage
ESD Withstand Voltage
Diode Capacitance
Diode Capacitance
Note: 1. Parameter is guaranteed by design and/or device characterization.
Peak Current (tp=8/20μs)2.5A
Operating Temperature–40 to 125°C
Storage Temperature–55 to 150°C
=25ºC)
OP
ParameterSymbolTest ConditionsMinTypMaxUnits
RWM
LEAK
1
1
1
1
V
C
I/O-GND
C
V
C
ESD
I/O-I/O
IR ≤ 1µA6V
VR=5V0.5µA
IPP=1A, tp=8/20µs, Fwd9.511. 0V
=2A, tp=8/20µs, Fwd10.613.0V
I
PP
IEC61000-4-2 (Contact)±8kV
IEC61000-4-2 (Air)±15kV
Reverse Bias=0V0.70.80.9pF
Reverse Bias=1.65V0.550.650.75pF
Reverse Bias=0V0.35pF
Thermal Information
ParameterRatingUnits
Storage Temperature Range–55 to
Maximum Junction Temperature150°C
Maximum Lead Temperature
(Soldering 20-40s)
150
260°C
°C
1
0
-1
-2
-3
-4
-5
-6
Insertion Loss [dB]
-7
-8
-9
-10
1.E+061.E+071.E+081.E+091.E+10
Frequency [Hz]
Capacitance vs. Bias VoltageInsertion Loss (S21) I/O to GND
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
I/O Capacitance (pF)
0.60
0.55
0.50
0.00.51.01.52.02.53.0 3.54.04.55.0
= 3.3V
V
CC
I/O DC Bias (V)
V
CC
= Float
VCC = 5V
Specifications are subject to change without notice.