Littelfuse SP1011 User Manual
TVS Diode Arrays (SPA
RoHS
GREEN
®
Diodes)
General Purpose ESD Protection - SP1011 Series
SP1011 Series 7pF 15kV Unidirectional TVS Array
Description
Zener diodes fabricated in a proprietary silicon avalanche
technology protect each I/O pin to provide a high level of
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes above
the maximum level specified in the IEC 61000-4-2
international standard (Level 4, ±8kV contact discharge)
without performance degradation. Their very low loading
capacitance also makes them ideal for protection highspeed signal pins.
Pinout
I/O (1)
GND
I/O (2)
µDFN-6
(1.25x1.0x0.5mm)
I/O (4)
GND
I/O (3)
Features
• ESD, IEC61000-4-2,
±15kV contact, ±30kV air
• Lightning, IEC61000-4-5,
2A (t
=8/20µs)
p
• Low capacitance of 7 pF
(TYP) per I/O @ 2.5V
• Low leakage current of
1µA (MAX) at 5V
Pb
• Tiny μDFN( JEDEC MO-
229) package (1.25mm x
1.0mm x 0.5mm)
• EFT protection
IEC61000-4-4, 40A
(5/50ns)
Functional Block Diagram
654
1
Additional Information
Datasheet
Resources
Applications
• LCD/PDP TV
• DVD Player
• Desktop
• Set Top Box
• Mobile Phone
• Notebook
• MP3/PMP
• Digital camera
Application Example
2
3
Input
Outside World
Samples
SP1011-04UTG
Shield
Ground
Keyboard
Controller
D1
D2
D3
D4
Signal
Ground
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/10/13
TVS Diode Arrays (SPA
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DC Bias (V)
Capacitance (pF)
-30
-25
-20
-15
-10
-5
0
5
00001000100101
Frequency (MHz)
Attenuation (dB)
®
Diodes)
General Purpose ESD Protection - SP1011 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Peak Pulse Current (tp=8/20μs) 2 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
Parameter Rating Units
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Voltage Drop V
Reverse Standoff Voltage V
Reverse Leakage Current I
Clamp Voltage
1
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note:
1. Parameter is guaranteed by design and/or device characterization.
1
1
V
RWM
LEAK
V
DYN
ESD
C
R
C
IEC61000-4-2 (Contact Discharge) ±15 kV
IEC61000-4-2 (Air Discharge) ±30 kV
D
Capacitance vs. Reverse Bias
IR = 1mA 6.0 8.5 V
IR≤1µA 6 V
VR = 5V 0.1 1 µA
IPP=1A, tp=8/20μs, Fwd 8.7 V
I
=2A, tp=8/20μs, Fwd 10.2 V
PP
(VC2 - VC1) / (I
- I
) 1. 5 Ω
PP2
PP1
Reverse Bias = 0V 12 15 pF
Reverse Bias = 2.5V 7 pF
Insertion Loss (S21) I/O to GND
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 10/10/13
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