TVS Diode Arrays (SPA
RoHS
GREEN
I/O Controller
Outside
World
P1
GND
Keypads
P2
IC P3
P4
SP1008 (x4)
®
Diodes)
General Purpose ESD Protection - SP1008 Series
SP1008 Series 6pF 15kV Bidirectional Discrete TVS Protection
Description
The SP1008 includes back-to-back TVS diodes fabricated
in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes above the
maximum level specified in the IEC61000-4-2 international
standard (±15kV contact discharge) without performance
degradation. The back-to-back configuration provides
symmetrical ESD protection for data lines when AC signals
are present.
Pinout
12
Note: Drawing not to scale
Features
• ESD, IEC61000-4-2,
±15kV contact, ±15kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning, IEC61000-4-5,
3A (t
=8/20μs)
P
Pb
• Low capacitance of 6pF
(@ V
=5V)
R
• Low leakage current of
0.1μA at 5V
• Space efcient 0201
footprint
Functional Block Diagram
1
Additional Information
Datasheet
Resources
2
Samples
Applications
• Mobile phones
• MP3/PMP
• PDA
• Camcorders
Application Example
• Smart phones
• External storage
• Tablets
• Digital cameras
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/21/13
TVS Diode Arrays (SPA
®
Diodes)
General Purpose ESD Protection - SP1008 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Peak Current (tp=8/20μs) 3.0 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
Parameter Rating Units
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
Breakdown Voltage V
Leakage Current I
Clamp Voltage
1
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note:
1
Parameter is guaranteed by design and/or device characterization.
1
1
V
RWM
BR
LEAK
V
DYN
ESD
C
C
IEC61000-4-2 (Contact Discharge) ±15 kV
IEC61000-4-2 (Air Discharge) ±15 kV
D
6.0 V
IR=1mA 7. 0 8.5 V
VR=5V with 1 pin at GND 0.1 μA
IPP=1A, tp=8/20µs, Fwd 10.7 V
I
=2A, tp=8/20µs, Fwd 12.0 V
PP
(VC2 - VC1) / (I
- I
) 1. 3
PP2
PP1
Reverse Bias=5.0V 6 9 pF
W
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 10/21/13
TVS Diode Arrays (SPA
t
R
R
o
C
e
T
T
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
Clamp Voltage (V
C
)
0
2
4
6
8
10
12
14
Peak Pulse Current-I
PP
(A)
1.0
1.5
2.0
2.5
-5
-10
-15
-20
-25
0
-30
-35
Attenuation (dB)
-40
-45
Frequency (MHz)
10
100
1000
®
Diodes)
General Purpose ESD Protection - SP1008 Series
Capacitance vs. Reverse Bias
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
I/O Capacitance (pF)
2.0
1.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I/O Bias Voltage (V)
Pulse Waveform
Insertion Loss (S21) I/O to GND
Clamping Voltage vs. I
PP
Soldering Parameters
Reflow Condition Pb – Free assembly
- Temperature Min (T
Pre Heat
Average ramp up rate (Liquidus) Temp
(T
) to peak
L
T
S(max)
Reflow
Peak Temperature (TP) 260
Time within 5°C of actual peak
Temperature (t
Ramp-down Rate 6°C/second max
Time 25°C to peak Temperature (T
Do not exceed 260°C
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/21/13
- Temperature Max (T
- Time (min to max) (ts) 60 – 180 secs
to TL - Ramp-up Rate 3°C/second max
- Temperature (TL) (Liquidus) 217°C
- Temperature (tL) 60 – 150 seconds
)
p
) 150°C
s(min)
) 200°C
s(max)
3°C/second max
20 – 40 seconds
) 8 minutes Max.
P
+0/-5
°C
t
T
P
Ramp-up
t
amp-up
PreheatPrehea
S
T
L
T
S(max)
Temperature
T
S(min)
25
time to peak temperature
P
t
L
Critical Zone
ritical Zon
L to TP
to
T
Ramp-down
amp-d
Time
TVS Diode Arrays (SPA
0.28
0.30
0.75
0.19
Recommended Solder Pad Footprint
A0
K0
B0
T
P0
P1
P2
D
D1
E
F
W
*Sizes in mm
A
B
D
E
D
F
C
G
x
®
Diodes)
General Purpose ESD Protection - SP1008 Series
Part Numbering System
–
1008
SP
TVS Diode Arrays
®
(SPA
Diodes)
Series
Number of
Channels
01
W T
G
Package
W: 0201 Flipchip
Package Dimensions — 0201 Flip Chip
G= Green
T= Tape & Reel
Ordering Information
Part Number Package Marking Min. Order Qty.
SP1008-01WTG 0201 Flipchip X 10000
Part Marking System
0201 Flipchip
Symbol
A 0.595 0.620 0.645 0.0234 0.0244 0.0254
B 0.295 0.320 0.345 0.0116 0.0126 0.0136
C 0.245 0.275 0.305 0.0096 0.0108 0.0120
D 0.145 0.150 0.155 0.0057 0.0059 0.0061
E 0.245 0.250 0.255 0.0096 0.0098 0.010 0
F 0.245 0.250 0.255 0.0096 0.0098 0 .0100
G 0.005 0. 010 0.015 0.0002 0.0004 0.0006
Millimeters Inches
Min Typ Max Min Typ Max
Embossed Carrier Tape & Reel Specification — 0201 Flipchip
Symbol Millimeters
A0 0.41±0.03
B0 0.70±0.03
D ø 1.50 + 0.10
D1 ø 0.20 ± 0.05
E 1.75±0.10
F 3.50±0.05
K0 0.38±0.03
P0 2.00±0.05
P1 2.00±0.05
P2 4.00±0.10
W 8.00 + 0.30 -0.10
T 0.23±0.02
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 10/21/13
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