Littelfuse SP1007 User Manual
TVS Diode Arrays (SPA
RoHS
GREEN
I/O Controller
Outside
World
P1
GND
Keypads
P2
IC P3
P4
SP1007 (x4)
12
0201 Flipchip
1
2
SOD882
General Purpose ESD Protection - SP1007 SeriesGeneral Purpose ESD Protection – SP1006 Series
®
Diodes)
SP1007 Series 3.5pF 8kV Bidirectional Discrete TVS
Description
The SP1007 includes back-to-back Zener diodes fabricated
in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes at the
maximum level specified in the IEC61000-4-2 international
standard (Level 4, ±8kV contact discharge) without
performance degradation. The back-to-back configuration
provides symmetrical ESD protection for data lines when
AC signals are present.
Pinout
Features
• ESD, IEC61000-4-2, ±8kV
contact, ±15kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning, IEC61000-4-5,
2A (t
=8/20μs)
P
Pb
• Low capacitance of 5pF
(TYP @ V
• Low leakage current of
0.1μA at 5V
• Space efcient 0201 and
0402 footprint
=5V)
R
Functional Block Diagram
1
2
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/22/13
Resources
Samples
Applications
• Mobile Phones
• Smart Phones
• Camcorders
• Portable Medical
• Digital Cameras
Application Example
• MP3/PMP
• Portable Navigation
Devices
• Tablets
• Point of Sale Terminals
TVS Diode Arrays (SPA
®
Diodes)
General Purpose ESD Protection - SP1007 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Peak Current (tp=8/20μs) 2.0 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
Parameter Rating Units
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
Breakdown Voltage V
Leakage Current I
Clamp Voltage
1
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note:
1
Parameter is guaranteed by design and/or device characterization.
1
1
V
RWM
BR
LEAK
V
DYN
ESD
C
C
IEC61000-4-2 (Contact Discharge) ±8 kV
IEC61000-4-2 (Air Discharge) ±15 kV
D
6.0 V
IR=1mA 8.5 9.5 V
VR=5V with 1 pin at GND 0.1 0.5 μA
IPP=1A, tp=8/20µs, Fwd 11. 2 V
I
=2A, tp=8/20µs, Fwd 13.1 V
PP
(VC2 - VC1) / (I
- I
) 1. 9 Ω
PP2
PP1
Reverse Bias=0V 5 6 pF
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 11/22/13
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