General Purpose ESD Protection - SP1007 SeriesGeneral Purpose ESD Protection – SP1006 Series
®
Diodes)
SP1007 Series 3.5pF 8kV Bidirectional Discrete TVS
Description
The SP1007 includes back-to-back Zener diodes fabricated
in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes at the
maximum level specified in the IEC61000-4-2 international
standard (Level 4, ±8kV contact discharge) without
performance degradation. The back-to-back configuration
provides symmetrical ESD protection for data lines when
AC signals are present.
Pinout
Features
• ESD, IEC61000-4-2, ±8kV
contact, ±15kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning, IEC61000-4-5,
2A (t
=8/20μs)
P
Pb
• Low capacitance of 5pF
(TYP @ V
• Low leakage current of
0.1μA at 5V
• Space efcient 0201 and
0402 footprint
=5V)
R
Functional Block Diagram
1
2
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature (Soldering 20-40s)260°C
Peak Current (tp=8/20μs)2.0A
Operating Temperature–40 to 125°C
Storage Temperature–55 to 150°C
ParameterRatingUnits
Electrical Characteristics (T
OP
=25ºC)
ParameterSymbolTest ConditionsMinTypMaxUnits
Reverse Standoff VoltageV
Breakdown VoltageV
Leakage CurrentI
Clamp Voltage
1
Dynamic ResistanceR
ESD Withstand Voltage
Diode Capacitance
Note:
1
Parameter is guaranteed by design and/or device characterization.
1
1
V
RWM
BR
LEAK
V
DYN
ESD
C
C
IEC61000-4-2 (Contact Discharge)±8kV
IEC61000-4-2 (Air Discharge)±15kV
D
6.0V
IR=1mA8.59.5V
VR=5V with 1 pin at GND0.10.5μA
IPP=1A, tp=8/20µs, Fwd11. 2V
I
=2A, tp=8/20µs, Fwd13.1V
PP
(VC2 - VC1) / (I
- I
)1. 9Ω
PP2
PP1
Reverse Bias=0V56pF
Specifications are subject to change without notice.