Littelfuse SP1006 User Manual

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TVS Diode Arrays (SPA

TVS Diode Arrays (SPA

General Purpose ESD Protection - SP1006 Series

General Purpose ESD Protection – SP1006 Series

®

Diodes)

Diodes)

SP1006 Series 25pF 30kV unidirectional Discrete TVS

Description

Zener diodes fabricated in a proprietary silicon avalanche
technology protect each I/O pin to provide a high level of
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes at ±30kV
(contact discharge, IEC 61000-4-2) without performance
degradation. Additionally, each diode can safely dissipate
5A of 8/20µs surge current (IEC61000-4-5) with very low
clamping voltages.

Features

Pinout

• ESD, IEC61000-4-2,
±30kV contact, ±30kV air

• EFT, IEC61000-4-4, 40A
(5/50ns)

• Lightning, IEC61000-4-5,
5A (8/20µs)

Pb

• Low leakage current of

0.5µA (MAX) at 5V

• Space efficient 0201
footprint)

Functional Block Diagram

Additional Information

Datasheet

Resources

Samples

Applications

• Mobile phones

• Smart phones

• PDAs

• Digital cameras

Application Example

P1

P2

Outside

World

P4

• Portable navigation
devices

• Portable medical devices

I/O Controller

IC P3

SP1006 (x4)

Life Support Note:

Not Intended for Use in Life Support or Life Saving Applications

The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13

TVS Diode Arrays (SPA

0

5

10

15

20

25

30

0.00.5 1.01.5 2.02.5 3. 03.5 4.04.5 5.0

Bias Voltage (V)

Capacitance (pF)

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

110%

0.0 5.0 10.0 15.0 20.0 25.0 30.0

Time (μs)

Percent of I

PP

TVS Diode Arrays (SPA

®

®

Diodes)

Diodes)

General Purpose ESD Protection - SP1006 Series

General Purpose ESD Protection – SP1006 Series

Absolute Maximum Ratings

Symbol Parameter Value Units

I

PP

T

OP

T

STOR

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Peak Pulse Current (tp=8/20μs) 5 A

Operating Temperature –40 to 125 °C

Storage Temperature –55 to 150 °C

Thermal Information

Parameter Rating Units

Storage Temperature Range –55 to 150 °C

Maximum Junction Temperature 150 °C

Maximum Lead Temperature (Soldering 30s) 260 °C

Electrical Characteristics (T

OP

=25ºC)

Parameter Symbol Test Conditions Min Ty p Max Units

Reverse Standoff Voltage V

Breakdown Voltage V

Forward Voltage Drop V

Leakage Current I

Clamp Voltage

1

Dynamic Resistance R

ESD Withstand Voltage

Diode Capacitance

Note: 1 Parameter is guaranteed by design and/or device characterization.

1

1

V

RWM

BR

LEAK

V

DYN

ESD

C

IR=1mA (Pin 1 to 2) 7. 8 V

F

IR=1mA (Pin 2 to 1) 0.8 V

Ipp=1A, tp=8/20µs (Pin 1 to 2) 8.3 V

C

I

=2A, tp=8/20µs (Pin 1 to 2) 9.2 V

pp

(VC2 - VC1) / (I

IEC61000-4-2 (Contact Discharge) ±30 kV

IEC61000-4-2 (Air Discharge) ±30 kV

Reverse Bias=0V 25 pF

D

Reverse Bias=2.5V 15 pF

6.0 V

VR=5V 0.1 0.5 μA

- I

) 0.9 Ω

PP2

PP1

Pulse WaveformCapacitance vs. Reverse Bias

Specifications are subject to change without notice.

© 2013 Littelfuse, Inc.

Revised: 04/24/13