Littelfuse SP1004 User Manual
TVS Diode Arrays (SPA
I/O 1
I/O 2
4 O/I3 O/I
I/O 5
SOT953
5
4
1
2
3
RoHS
GREEN
®
Diodes)
General Purpose ESD Protection - SP1004 Series
SP1004 Series 5pF 8kV Bidirectional TVS Array
Description
Back-to-back zener diodes fabricated in a proprietary silicon
avalanche technology protect each I/O pin to provide a
high level of protection for electronic equipment that may
experience destructive electrostatic discharges (ESD).
These robust diodes can safely absorb repetitive ESD
strikes at the maximum level specified in the IEC 61000-42 international standard (Level 4, ±8kV contact discharge)
without performance degradation. Their very low loading
capacitance also makes them ideal for protecting highspeed signal pins.
Pinout
Features
• ESD, IEC61000-4-2, ±8kV
contact, ±15kV air
• Capable of withstanding
>1,000 ±8kV ESD strikes
• Lightning, IEC61000-4-5,
2A (t
=8/20µs)
p
Pb
• Low capacitance of 5pF
(TYP) per I/O
• Low leakage current of
1µA (MAX) at 5V
• Small SOT953 package
Notes:
1
Any of the 5 I/O pins can be tied to GND to provide 4 channels of bidirectional protection
Functional Block Diagram
Additional Information
Datasheet
Resources
Samples
Applications
• MP3-PMPs
• DVD players
• Desktops
• Mobile phones
Application Example
RCA jacks
Back panel (STB, TV)
• Digital cameras
• Set top boxes
• Notebooks
SP1004-04VTG (SOT953)
Shield
Ground
Audio codec
Left - In
Right - In
Left - Out
Right - Out
Signal
Ground
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/10/13
TVS Diode Arrays (SPA
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DC Bias (V)
Capacitance (pF)
-30
-25
-20
-15
-10
-5
0
5
00001000100101
Frequency (MHz)
Attenuation (dB)
®
Diodes)
General Purpose ESD Protection - SP1004 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Peak Pulse Current (tp=8/20μs) 2.0 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
Parameter Rating Units
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Voltage Drop
Reverse Standoff Voltage
Reverse Leakage Current
Clamp Voltage
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note: 1 Parameter specified with pin 2 grounded externally.
2
Parameter is guaranteed by design and/or device characterization.
3
Capable of withstanding >1,000 pulses at 1s intervals.
1
2
1,2
1,2
V
R
1
V
RWM
1
I
LEAK
V
C
DYN
V
ESD
C
D
Capacitance vs. Reverse Bias
IR=1mA 6.0 9.5 V
IR≤1µA 6.0 V
VR=5V 0.1 µA
IPP=1A, tp=8/20µs 10 V
I
=2A, tp=8/20µs 12 V
PP
(VC2 - VC1) / (I
IEC61000-4-2 (Contact Discharge)
- I
) 2.0 Ω
PP2
PP1
3
±8 kV
IEC61000-4-2 (Air Discharge) ±15 kV
Reverse Bias=0V 6 7 pF
Reverse Bias=1.5V 5 6 pF
Insertion Loss (S21)
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 10/10/13
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