Back-to-back zener diodes fabricated in a proprietary silicon
avalanche technology protect each I/O pin to provide a
high level of protection for electronic equipment that may
experience destructive electrostatic discharges (ESD).
These robust diodes can safely absorb repetitive ESD
strikes at the maximum level specified in the IEC 61000-42 international standard (Level 4, ±8kV contact discharge)
without performance degradation. Their very low loading
capacitance also makes them ideal for protecting highspeed signal pins.
Pinout
Features
• ESD, IEC61000-4-2, ±8kV
contact, ±15kV air
• Capable of withstanding
>1,000 ±8kV ESD strikes
• Lightning, IEC61000-4-5,
2A (t
=8/20µs)
p
Pb
• Low capacitance of 5pF
(TYP) per I/O
• Low leakage current of
1µA (MAX) at 5V
• Small SOT953 package
Notes:
1
Any of the 5 I/O pins can be tied to GND to provide 4 channels of bidirectional protection
Functional Block Diagram
Additional Information
Datasheet
Resources
Samples
Applications
• MP3-PMPs
• DVD players
• Desktops
• Mobile phones
Application Example
RCA jacks
Back panel (STB, TV)
• Digital cameras
• Set top boxes
• Notebooks
SP1004-04VTG (SOT953)
Shield
Ground
Audio codec
Left - In
Right - In
Left - Out
Right - Out
Signal
Ground
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature (Soldering 20-40s)260°C
Peak Pulse Current (tp=8/20μs)2.0A
Operating Temperature–40 to 125°C
Storage Temperature–55 to 150°C
ParameterRatingUnits
Electrical Characteristics (T
OP
=25ºC)
ParameterSymbolTest ConditionsMinTypMaxUnits
Reverse Voltage Drop
Reverse Standoff Voltage
Reverse Leakage Current
Clamp Voltage
Dynamic ResistanceR
ESD Withstand Voltage
Diode Capacitance
Note: 1 Parameter specified with pin 2 grounded externally.
2
Parameter is guaranteed by design and/or device characterization.
3
Capable of withstanding >1,000 pulses at 1s intervals.
1
2
1,2
1,2
V
R
1
V
RWM
1
I
LEAK
V
C
DYN
V
ESD
C
D
Capacitance vs. Reverse Bias
IR=1mA6.09.5V
IR≤1µA6.0V
VR=5V0.1µA
IPP=1A, tp=8/20µs10V
I
=2A, tp=8/20µs12V
PP
(VC2 - VC1) / (I
IEC61000-4-2 (Contact Discharge)
- I
)2.0Ω
PP2
PP1
3
±8kV
IEC61000-4-2 (Air Discharge)±15kV
Reverse Bias=0V67pF
Reverse Bias=1.5V56pF
Insertion Loss (S21)
Specifications are subject to change without notice.