Littelfuse MG06400D-BN4MM User Manual
Power Module
600V IGBT Family
MG06400D-BN4MM Series 400A Dual IGBT
RoHS
Features
• High short circuit
capability,self limiting
short circuit current
• V
with positive
CE(sat)
• Free wheeling diodes
with fast and soft reverse
recovery
• Low switching losses
temperature coefcient
• Fast switching and short
tail current
Applications
• Motor drives
Agency Approvals
AGENCY AGENCY FILE NUMBER
E71639
Module Characteristics (T
Symbol Parameters Test Conditions Min Typ Max Unit
T
Vj max)
T
Vj op
T
stg
V
isol
CTI Comparative Tracking Index
Torque Module-to-Sink Recommended (M6) 3 5 N·m
Torque Module Electrodes Recommended (M6) 2.5 5 N·m
Weight 320 g
Max. Junction Temperature 175 °C
Operating Temperature -40 150 °C
Storage Temperature -40 125 °C
Insulation Test Voltage AC, t=1min 3000 V
= 25°C, unless otherwise specified)
C
Module case exposed to 0.1% ammonium
chloride solution per UL and IEC standards
• Inverter
• Converter
350 V
• SMPS and UPS
• Welder
• Induction Heating
Absolute Maximum Ratings (T
= 25°C, unless otherwise specified)
C
Symbol Parameters Test Conditions Values Unit
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Collector - Emitter Voltage TVj=25°C 600 V
Gate - Emitter Voltage ±20 V
=25°C 500 A
T
DC Collector Current
C
T
=70°C 400 A
C
Repetitive Peak Collector Current tp=1ms 800 A
Power Dissipation Per IGBT 1250 W
Diode
V
RRM
I
F(AV)
I
FRM
2
I
t TVj =125°C, t=10ms, VR=0V 10000 A2s
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG06400D-BN4MM
Repetitive Reverse Voltage TVj=25°C 600 V
=25°C 500
T
Average Forward Current
C
=70°C 400
T
C
Repetitive Peak Forward Current tp=1ms 800 A
1
Specifications are subject to change without notice.
©2013 Littelfuse, Inc
A
A
Revised:08/06/13
Power Module
600V IGBT Family
Electrical and Thermal Specifications (T
= 25°C, unless otherwise specified)
C
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
V
V
I
I
R
Q
C
C
t
t
t
t
E
E
I
R
CES
GES
d(on)
r
d(off)
f
SC
GE(th)
CE(sat)
Gint
ge
ies
res
on
off
thJC
Gate - Emitter Threshold Voltage VCE=VGE, IC=6.4mA 4.9 5.8 6.5 V
I
Collector - Emitter
Saturation Voltage
Collector Leakage Current
=400A, VGE=15V, TVj=25°C 1.45 V
C
I
=400A, VGE=15V, TVj=125°C 1.6 V
C
=600V, VGE=0V, TVj=25°C 1. 0 mA
V
CE
V
=600V, VGE=0V, TVj=125°C 5 mA
CE
Gate Leakage Current VCE=0V,VGE=±15V, TVj=125°C -400 400 μA
Intergrated Gate Resistor 1. 0 Ω
Gate Charge VCE=300V, IC=400A , VGE=±15V 4.3 μC
Input Capacitance
V
=25V, VGE=0V, f =1MHz
Reverse Transfer Capacitance 0.76 nF
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
CE
V
=30 0V
CC
IC=40 0A
RG =1.5 Ω
VGE=±15V
Inductive Load
≤6μS , VGE=15V
t
psc
T
=125°C,VCC=360V
Vj
=25°C 110 ns
T
Vj
T
=125°C 120 ns
Vj
=25°C 50 ns
T
Vj
T
=125°C 60 ns
Vj
=25°C 490 ns
T
Vj
T
=125°C 520 ns
Vj
=25°C 60 ns
T
Vj
T
=125°C 70 ns
Vj
=25°C 2.1 mJ
T
Vj
T
=125°C 3.2 mJ
Vj
=25°C 12 mJ
T
Vj
T
=125°C 15 mJ
Vj
Junction-to-Case Thermal
Resistance (Per IGBT)
26 nF
2000 A
0.12 K/W
Diode
=400A , VGE=0V, TVj =25°C 1.55 V
I
V
I
Q
E
R
RRM
F
rr
rec
thJCD
Forward Voltage
Max. Reverse Recovery Current IF=400A , VR=300V 330 A
Reverse Recovery Charge diF/dt=-7000A/μs 29.0 μC
Reverse Recovery Energy TVj=125°C 7. 4 mJ
Junction-to-Case Thermal
Resistance (Per Diode)
F
I
=400A , VGE=0V, TVj =125°C 1.50 V
F
0.22 K/W
MG06400D-BN4MM
2
Specifications are subject to change without notice.
©2013 Littelfuse, Inc
Revised:08/06/13
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