Littelfuse MG06400D-BN1MM User Manual

Power Module

600V IGBT Family

MG06400D-BN1MM Series 400A Dual IGBT

RoHS

Features

• Ultra low loss

• High ruggedness

• Positive temperature
coefcient

• High short circuit
capability

Applications

• Motor drives

Agency Approvals

• Inverter

• Converter

AGENCY AGENCY FILE NUMBER

E71639

Module Characteristics (T

Symbol Parameters Test Conditions Min Typ Max Unit

T

Vj max)

T

Vj op

T

STG

V

isol

CTI Comparative Tracking Index

R

thJC

R

thJCD

Torque Module-to-Sink Recommended (M6) 3 5 N·m

Torque Module Electrodes Recommended (M6) 2.5 5 N·m

Weight 310 g

Max. Junction Temperature 150 °C

Operating Temperature

Storage Temperature Range -40 125 °C

Insulation Test Voltage

Junction-to-Case Thermal

Junction-to-Case Thermal

= 25°C, unless otherwise specified)

C

Resistance

Resistance

AC, t=1min 3000

Module case exposed to 0.1% ammonium
chloride solution per UL and IEC standards

Per IGBT

Per Inverse Diode

-40

350 V

• SMPS and UPS

• Welder

• Induction Heating

150 °C

0.09

0.15 K/W

V

K/W

Absolute Maximum Ratings (T

= 25°C, unless otherwise specified)

C

Symbol Parameters Test Conditions Values Unit

IGBT

V

V

I

I

P

CES

GES

C

Cpuls

tot

Collector - Emitter Voltage 600 V

Gate - Emitter Voltage ±20 V

=25°C 460 A

T

DC Collector Current

Pulsed Collector Current

C

T

=50°C 400 A

C

=25°C, tp=1ms 920 A

T

C

T

=50°C, tp=1ms 800 A

C

Power Dissipation Per IGBT 140 0 W

Free-Wheeling Diode

V

RRM

I

F(AV)

I

F(RMS)

I

FSM

Life Support Note:

Not Intended for Use in Life Support or Life Saving Applications

The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.

MG06400D-BN1MM

Repetitive Reverse Voltage 600 V

=25°C 400

T

Average Forward Current

C

=50°C 320

T

C

RMS Forward Current 570 A

=45°C, t=10ms, Sine 120 0 A

Non-Repetitive Surge

Forward Current

T

Vj

T

=45°C, t=8.3ms, Sine 1320 A

Vj

1

Specifications are subject to change without notice.

©2013 Littelfuse, Inc

A

A

Revised:08/06/13

Power Module

600V IGBT Family

Electrical Characteristics (T

= 25°C, unless otherwise specified)

C

Symbol Parameters Test Conditions Min Typ Max Unit

IGBT

V

V

I

CES

I

GES

R

Q

C

C

C

t

t

t

t

E

E

GE(th)

CE(sat)

Gint

ge

ies

oes

res

d(on)

r

d(off)

f

on

off

Gate - Emitter Threshold Voltage VCE=VGE, IC=8mA 4.5 5.5 6.5 V

I

Collector - Emitter
Saturation Voltage

Collector Leakage Current

=400A, VGE=15V, TVj=25°C 1.95 2.45 V

c

I

=400A, VGE=15V, TVj=125°C 2.2 V

C

=600V, VGE=0V, TVj=25°C 1 mA

V

CE

V

=600V, VGE=0V, TVj=125°C 2 mA

CE

Gate Leakage Current VCE=0V, VGE=±20V 1.2 1.2 μA

Intergrated Gate Resistor 2.5 Ω

Gate Charge VCE=300V, IC=400A , VGE=±15V 1.8 μC

Input Capacitance

Output Capacitance 1. 8 nF

V

=25V, VGE=0V, f =1MHz

CE

18 nF

Reverse Transfer Capacitance 1. 6 nF

=25°C 195 ns

T

Turn - on Delay Time

Rise Time

Turn - off Delay Time

Fall Time

Turn - on Energy

Turn - off Energy

V

=300V

CC

IC=400A

RG =3Ω

VGE=±15V

Inductive Load

Vj

=125°C 220 ns

T

Vj

=25°C 65 ns

T

Vj

T

=125°C 80 ns

Vj

=25°C 295 ns

T

Vj

T

=125°C 350 ns

Vj

=25°C 45 ns

T

Vj

T

=125°C 60 ns

Vj

=25°C 6.5 mJ

T

Vj

T

=125°C 10 mJ

Vj

=25°C 9.5 mJ

T

Vj

T

=125°C 14.5 mJ

Vj

Free-Wheeling Diode

=400A , VGE=0V,TVj =125°C 1.25 1.6 V

I

V

T

I

Q

RRM

F

rr

Forward Voltage

Reverse Recovery Time IF=400A , VR=300V 249 ns

Reverse Recovery Charge diF/dt=-2000A/μs 214 A

rr

Reverse Recovery Charge TJ =125°C 31 μC

F

I

=400A , VGE=0V, TVj =125°C 1. 2 V

F

MG06400D-BN1MM

2

Specifications are subject to change without notice.

©2013 Littelfuse, Inc

Revised:08/06/13

Power Module

820

700

560

I

C

(A)

T

Vj

=25°C

420

V

CE(sat)

˄V˅

T

Vj

=125°C

280

140

0

0 1 1.5 2.5 3.5

2 3

0.5

36

E

on

E

off

(mJ)

30

24

18

12

6

0 120 360

I

C

˄A˅

VCC=300V
R

G

=3ohm

V

GE

=±15V

T

Vj

=125°C

E

on

E

off

840720 600

480 240

0

36

30

12

24

6

0

03

6

912 15

18

E

on

E

off

(mJ)

E

on

E

off

RG˄ohm˅

21

VCC=300V
I

C

=400A

V

GE

=±15V

T

Vj

=125°C

18

t

(ns)

100

0 80 240

I

C

˄A˅

VCC=300V
R

G

=3ohm

V

GE

=±15V

T

Vj

=125°C

t

d(off)

t

f

t

r

t

d(on)

560480 400

320 160

10

1000

t

d(on)

t

d(off)

1000

10

VCC=300V
I

C

=400A

V

GE

=±15V

T

Vj

=125°C

t

(ns)

t

r

t

f

100

02

4

68 10

12

R

G

˄ohm˅

14

820

VCE=20V

700

560

I

C

(A)

420

280

T

Vj

=125°C

T

Vj

=25°C

140

0

0

V

GE

˄V˅

142468 10 12

600V IGBT Family

Figure 1: Typical Output Characteristics

Figure 3: Switching Energy vs. Collector Current

Figure 2: Typical Transfer Characteristics

Figure 4: Switching Energy vs. Gate Resistor

Figure 5: Switching Times vs. Collector Current Figure 6: Switching Times vs. Gate Resistor

MG06400D-BN1MM

3

Specifications are subject to change without notice.

©2013 Littelfuse, Inc

Revised:08/06/13

Power Module

V

GE

(V)

Qg˄nC˅

0

0

20

25

10

15

5

400

800

1200

1600

2000

VCC=300V
I

C

=400A

T

Vj

=25°C

C (nF)

VCE˄V˅

30 25 20 15

V

GE

=0V

f=1MHz

C

ies

C

res

0.1

1

0

510

C

oes

100

10

35

00 100 300

V

CE

˄V˅

700

200 400

500 600

I

C

p

uls

(

A

)

T

Vj

=150°C

T

C

=25°C

V

GE

=15V

1000

800

600

400

200

1200

0

0100

200

300 400 500

600

V

CE

˄V˅

700

2000

2400

1600

120

I

0

800

400

Csc

(A)

T

Vj

=150°C

T

C

=25°C

V

GE

=15V

t

sc

İ10µs

TC Case Temperature(°C)

I

C

(

A

)

T

Vj

=150°C

V

GE

ı15V

0

25

0

300

200

100

500

400

50 75

125

100

150

600

175

T

Vj

=125°C

T

Vj

=25°C

820

700

560

420

I

F

(A)

280

140

0

V

˄V˅

03 3.5

2.5

2.0

1.51.0

0.5

600V IGBT Family

Figure 7: Diode Forward Characteristics

Figure 9: Reverse Biased Safe Operating Area

Figure 8: Typical Capacitances vs. V

CE

Figure 10: Short Circuit Safe Operating Area

Figure 11: Rated Current vs. T

MG06400D-BN1MM

C

Figure12: Diode Forward Characteristics

4

Specifications are subject to change without notice.

©2013 Littelfuse, Inc

Revised:08/06/13

Power Module

10

-1

10

-2

10

-3

1

10

-1

10

-2

10

-3

10

-4

10

-4

Duty

0.5

0.2

0.1

0.05
Single Pulse

Z

thJC

(K/W)

1

Rectangular Pulse Duration (seconds)

10

-4

10

-4

10

-3

10

-3

10

-2

10

-2

10

-1

10

-1

1

1

Duty

0.5

0.2

0.1

0.05
Single Pulse

Z

thJC

(K/W)

Rectangular Pulse Duration (seconds)

600V IGBT Family

Figure 13: Transient Thermal Impedance of IGBT

Dimensions-Package D

Figure 14:Transient Thermal Impedance of Diode

Circuit Diagram and Pin Assignment

MG06400D-BN1MM

5

Specifications are subject to change without notice.

©2013 Littelfuse, Inc

Revised:08/06/13

Power Module

PRODUCT TYPE

M: Power Module

MODULE TYPE

G: IGBT

CIRCUIT TYPE

WAFER TYPE

PACKAGE TYPE

MG06400D-BN1MM

VOLTAGE RATING

CURRENT RATING

ASSEMBLY SITE

06: 600V

400: 400A

D: Package D

B: 2x(IGBT+FWD)

600V IGBT Family

Packing Options

Part Number Marking Weight Packing Mode M.O.Q

MG06400D-BN1MM MG0640 0D-BN1MM 310g Bulk Pack 30

Part Numbering System

Part Marking System

MG06400D-BN1MM

6

Specifications are subject to change without notice.

©2013 Littelfuse, Inc

Revised:08/06/13