This LC03-3.3 series provides overvoltage protection for
applications such as 10/100/1000 BaseT Ethernet, and
T3/E3 interfaces. This new protector combines the TVS
diode element with a diode rectifier bridge to provide both
longitudinal and differential protection in one package.
This design results in a capacitive loading characteristic
that is log-linear with respect to the signal voltage across
the device. This reduces intermodulation (IM) distortion
caused by a typical solid-state protection solution. The
application schematic provides the connection information
and the LC03-3.3 is rated for GR-1089, intra-building
transient immunity requirements for telecommunication
installations.
Features
• Lightning Protection,
IEC61000-4-5, 150A
(t
p
=8/20µs)
• EFT, IEC61000-4-4, 40A
(t
p
=5/50ns)
• Low insertion loss, loglinear capacitance
• Low clamping voltage
• SOIC-8 surface mount
package (JEDEC MS-012)
• Combined longitudinal
and metallic protection
• Clamping speed of
nanoseconds
• UL 94V-0 epoxy molding
• RoHS compliant
Functional Block Diagram
Line in
Pin 2, 3, 6,
and 7
Line in
Pin 1 and 8
Pin 4 and 5
Line out
Line out
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
This schematic shows a high-speed data interface
protection solution. The LC03-3.3BTG is compatible with
the intra-building surge requirements of Telcordia’s GR1089-CORE, and the Basic Level Recommendations of
ITU K.20 and K.21. The TeleLink fuse provides overcurrent
protection for the long term 50/60 Hz power fault events.
TVS Diode Arrays (SPA
®
Diodes)
Lightning Surge Protection - LC03-3.3 Series
Absolute Maximum Ratings
ParameterRatingUnits
Peak Pulse Current (8/20µs)150A
Peak Pulse Power (8/20µs)3300W
IEC 61000-4-2, Direct Discharge, (Level 4)30kV
IEC 61000-4-2, Air Discharge, (Level 4)30kV
IEC 61000-4-5 (8/20µs)150A
Telcordia GR 1089 (Intra-Building) (2/10µs)100A
ITU K.20 (5/310µs)40A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (TOP = 25°C)
ParameterSymbolTest ConditionsMinTypMaxUnits
Reverse Stand-Off VoltageV
Reverse Breakdown VoltageV
Snap Back VoltageV
Reverse Leakage CurrentI
Clamping Voltage, Line-GroundV
Clamping Voltage, Line-GroundV
Dynamic Resistance, Line-GroundR
Clamping Voltage, Line-LineV
Clamping Voltage, Line-LineV
Dynamic Resistance , Line-LineR
Junction CapacitanceC
RWM
BR
SB
R
C
C
DYN
C
C
DYN
Between I/O Pins and Ground
j
IT≤1µA--3.3V
IT= 2µA3.3--V
IT= 50mA3.3--V
V
= 3.3V, T= 25°C--1µA
RWM
IPP= 50A, tp=8/20 µs--13V
IPP= 100A, tp=8/20 µs--17V
(VC2-VC1)/(I
IPP= 50A, tp=8/20 µs--15V
IPP= 100A, tp=8/20 µs--20V
(VC2-VC1)/(I
VR=0V, f= 1MHz
Between I/O Pins
=0V, f= 1MHz
V
R
Thermal Information
ParameterRatingUnits
SOIC Package170°C/W
Operating Temperature Range–40 to 125°C
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
)-0.15-
PP2-IPP1
)-0.25-
PP2-IPP1
-912pF
-4.56pF
260°C
SP03a-3.3
W
W
Figure 1: Non-repetitive Peak Pulse Current vs. Pulse Time
1000
100
10
Peak Pulse Current (A)
1
11010010 00
Pulse decay time (µs)
Figure 2: Current Derating Curve
120
)
P
100
80
60
40
20
Percentage of Rated Current (%I
0
020406080100120140160
Ambient Temperature (C)
Specifications are subject to change without notice.