
Teccor® brand Thyristors
Multipulse™ SIDACs
Kxxx1G Series
Schematic Symbol
Applications
RoHS
Description
The Multipulse™ SIDAC is a voltage switch used in MetalHalide lamp ignition circuits as well as High Pressure
Sodium lamp ignition circuits for outdoor street and area
lighting. This robust solid state switch is designed to handle
lamp igniter applications requiring operation at ambient
temperatures up to 90°C where igniter circuit components
can raise SIDAC junction temperature up to 125°C, especially
when the lamp element is removed or ruptured. Its excellent
commutation time (t
suited for producing multiple pulses in each half cycle of
50/60 Hz line voltage. The Multipulse
) makes this robust product best
COMM
™
SIDAC is offered in
DO-15 axial leaded package.
Kxxx1G SIDAC has a repetitive off-state blocking voltage
(V
) of 180V to 270V minimum depending actual device
DRM
type. Blocking capability is ensured by glass passivated
junctions for best reliability. Package is epoxy encapsulation
with tin-plated copper alloy leads.
Features
• AC circuit oriented
RoHS
• Compliant
• Triggering Voltage of 200
to 380V
Typical application circuit presented in Figure 10 of this data
sheet (Typical Metal Halide Ignitor Circuit).
Electrical Specifications
Symbol Parameters Test Conditions Min Max Unit
K2201G
V
BO
Breakover/Trigger Voltage
K2401G
K2501G
K3601G
K2201G
V
DRM
Repetitive Peak Off-State Voltage
K2401G
K2501G
K3601G
I
T(RMS)
I
H
R
S
t
COMM
I
BO
I
TSM
On-State RMS Current, TJ < 125ºC
Dynamic Holding Current, R=100 Ω
Switching Resistance, RS=
(IS – IBO)
(VBO – VS)
________
Commutation Time TJ < 125ºC
Breakover Current
Non-repetitive 1 cycle On-State peak value
50/60Hz
Sine Wave
50/60Hz
Sine Wave
50/60Hz
Sine Wave
See test circuit and
waveform in Figure 9
50/60Hz
Sine Wave
60Hz
50Hz
di/dt Critical Rate of Rise of On-State Current 150 A/μsec
dv/dt Critical Rate of Rise of Off-State Voltage 150 0 V/μsec
T
S
T
J
R
θJL
Storage Temperature Range -40 +125 °C
Max Operating Junction Temperature -40 +125 °C
Thermal Resistance Junction to lead 18 °C/W
200
220
240
340
230
250
280
380
V
180
190
200
V
270
1 A
120 TYP mA
100 Ω
100 μsec
10 uA
20.0
16.7
A
Kxxx1G Series
1
Specifications are subject to change without notice.
©2013 Littelfuse, Inc
Revised: 12/26/13

Teccor® brand Thyristors
Multipulse™ SIDACs
Figure 1: Characteristics
+I
I
T
I
H
I
S
I
BO
I
R
=
S
DRM
(VBO - VS)
- IBO)
(I
S
V
V
T
V
DRM
-V
-I
Figure 3: Power Dissipation (Typical)
vs. On-State Current
4.0
3.5
3.0
2.5
(Watts)
D
2.0
1.5
Average P
1.0
0.5
0.0
RMS On-State Current (Amps)
Figure 2: Maximum Allowable Lead/Tab Temperature
vs. On-State Current
130
120
R
S
+V
V
BO
S
110
100
90
80
Te mperature (°C)
70
Maximum Allowable Lead
60
50
2.01.51.00
RMS On-State Current (Amps)
Figure 4: VBO Change
vs. Junction Temperature
10.0
BO
5.0
0.0
Change (%)
-5.0
Normalized Percentage of V
-10.0
1.51.00.50.0
-40 -25 -10520 35 50 65 80 95 110125
Junction Temperature (°C)
Figure 5: Pulse On-State
Current Rating
1000
di/dt limit
100
)-Amps
TRM
10
Current (I
Repetitive Peak On-State
1
Kxxx1G Series
1KHz
5KHz
110 100 1000
f = 5Hz
60 Hz
Pulse Base Width (tO)-µs
Figure 6: Maximum Allowable Ambient Temperature
vs. On-State Current
140
I
TM
t
O
1/f
TJ=125˚C
120
100
80
) - °C
A
(T
60
40
25
Maximum Allowable Ambient Te mperature
20
0.00.2 0.40.6 0.
RMS On-State Current [I
2
CURRENT WAVEFORM: Sinusoidal - 60Hz
LOAD: Resistive or Inductive
FREE AIR RATING
] - Amps
T(RMS)
Specifications are subject to change without notice.
©2013 Littelfuse, Inc
.0
Revised: 12/26/13