Littelfuse K2xx0yHU User Manual

K2xx0yHU Series

Teccor® brand Thyristors

High Energy Unidirectional SIDACs

Description

The new K2xx0yHU is a higher energy SIDAC switch for gas
ignition applications requiring higher current pulse current
especially at low repetition rate. It is offered in a DO-15
leaded package and DO-214AA surface mount package.
Voltage activation of this solid state switch is accomplished
with peak voltage level of 190 to 260Volts. The SIDAC is
a silicon bilateral voltage triggered Thyristor switch that
switches on through a negative resistance region to a low
on-state voltage. Conduction will continue until current is
interrupted or lowered below minimum holding current of
the device.

Features

Schematic Symbol

• AC circuit oriented

• Triggering Voltage of 190

• RoHS compliant

• Unidirectional

to 260V

• 280A Pulse current

capability

K

A

Applications

Suitable for high voltage power supplies, natural gas
igniters, and Xenon flash ignition.

Electrical Specifications (T

Symbol Parameters Test Conditions Min Max Unit

V

BO

V

DRM

I

T(RMS)

V

TM

I

H

Repetitive Peak Off-state Voltage

= 25°C, unless otherwise specified)

J

Breakover/Trigger Voltage

On-state RMS Current

Peak On-state Voltage

Dynamic Holding Current

K2000yHU 190 210
K2200yHU 210 230
K2400yHU 230 250
K2500yHU 240 260
K2000yHU 180
K2200yHU 190
K2400yHU 210
K2500yHU 220

50/60Hz, T

50/60Hz Sine Wave

< 125°C

J

= 1A

I

T

RL = 100Ω

60 mA

1 A

1. 5 V

V

V

R

I

I

BO

TRM

S

Switching Resistance, RS=

(IS – IBO)

Breakover Current 50/60Hz Sine Wave 500 μA

Peak Repetitive Pulse Current

(refer to figure 4)

(VBO – VS)
________

50/60Hz Sine Wave 100

tp = 10μs

60Hz 120

5Hz 280

di/dt Critical Rate of Rise of On-State Current 220 A/μs

dv/dt Critical Rate of Rise of Off-State Voltage 150 0 V/μs
T

S

T

J

R

θJL

R

θJA

Note: xxx - voltage, y = package

K2xx0GHURP Series

Storage Temperature Range -40 150 °C

Junction Temperature Range -40 125 °C

Thermal Resistance, Junction to Lead

DO-15 18

DO-214AA 30

Thermal Resistance, Junction to Ambient DO-15 75 °C/W

1

Specifications are subject to change without notice.

©2014 Littelfuse, Inc

Revised: 01/06/14

Ω

A

°C/W

Teccor® brand Thyristors

-V

+I

V

DRM

+V

V

S

I

S

I

H

R

S

I

DRM

I

BO

V

BO

V

T

I

T

(IS-IBO)

(VBO-VS)

R

S

=

-I

01

cles

High Energy Unidirectional SIDACs

Figure 1: V-I Characteristics

Figure 3: Power Dissipation vs. On-state Current

(Typical)

1.2

1.0

0.8

] - Watts

0.6

D(AV)

[P

0.4

0.2

Average On-State Power Dissipation

0.0

0.0 0.2 0.4 0.6 0.8 1.

RMS On-State Current [I

CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE:
See basic SIDAC circuit in Figure 12

] - Amps

T(RMS)

Figure 2: On-state Current vs. On-state

Voltage (Typical)

9

8

) – Amps

T

7

6

5

4

3

2

1

Instantaneous On-state Current (i

0

0.6 0.8 1. 01.2 1.41.6 1.8 2.0

Figure 4: Repetitive Peak On-state Current (I

Instantaneous On-state Voltage (vT) – Volts

TRM

)

vs. Pulse Width at Various Frequencies

1000

) - Amps

TRM

.2

Repetitive Peak On-State Current (I

di/dt Limit Line

100

10

1

110100 1000

1 kHz

5 kHz

I

TM

t

O

1/f

5 Hz

60 Hz

Pulse Base Width (tO) - us

Figure 5: Surge Peak On-state Current

vs. Number of Cycles

100

) – Amps

TSM

10

Notes:

1) Blocking capability may be lost during
and immediately following surge

Peak Surge (Non-repetitive)

current interval.

On-state Current (I

2) Overload may not be repeated until
junction temperature has returned
to steady-state rated value.

1

110100 1000

K2xx0GHURP Series

SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: I
Value at Specified Junction Temperature

Surge Current Duration -- Full Cy

RMS Maximum Rated

T

Figure 6: Normalized VBO Change

vs. Junction Temperature

10%

8%

6%

4%

2%

0%

Change -- %

BO

V

-2%

-4%

-6%

-8%

-40 -20 020406080100 120140

Junction Temperature (TJ) -- °C

2

Specifications are subject to change without notice.

©2014 Littelfuse, Inc

Revised: 01/06/14