Littelfuse High Reliability Varistors offer the latest in
increased product performance, and are available for
applications requiring quality and reliability assurance levels
consistent with military or other standards (MIL-STD-19500,
MIL-STD-750, Method 202). Additionally, Littelfuse
Varistors are inherently radiation hardened compared
to Silicon Diode suppressors as illustrated in Figure 1.
This series of varistors are screened and conditioned in accordance with MIL-R-83530 as outlined in Table 2.
Manufacturing system conforms to MIL-I-45208; MIL-Q-9858.
Table 1. MIL-R-83530/1 Ratings and Characteristics
In addition to our comprehensive high-reliability series, Littelfuse can screen and condition to specific requirements.
Additional mechanical and environmental capabilities are defined in Table 8.
TABLE 8. Mechanical And Environmental Capabilities (Typical Conditions)
The General Services Administration has authorized the
use of the Commercial Item Description (CID) for all
government agencies. There are three (3) listed series
within Littelfuse leaded/Industrial range:
A-A-55564-3 (ZA Series) A-A-55564-2 (DA/DB Series)
The PIN number should be used to buy commercial product
to the CID. The manufacturer’s number shown should not
be used for ordering purposes.
PIN consists of abbreviated CID number + Applicable Sheet
(2 digits) + Dash number (-3 digits)
For space applications, an extremely important property of a
protection device is its response to imposed radiation effects.
Electron Irradiation
A Littelfuse MOV and a Silicon transient suppression diode
were exposed to electron irradiation. The V-I curves, before
and after test, are shown below.
Counterclockwise rotation of the V-I characteristics is
observed in Silicon devices at high neutron irradiation
levels; in other words, increasing leakage at low current
levels and increasing clamping voltage at higher current
levels.
The solid and open circles for a given fluence represent the
high and low breakdown currents for the sample of devices
tested. Note that there is a marked decrease in current (or
200
V
100
80
60
40
20
8
10
It is
FIGURE 1. RADIATION SENSITIVITY OF LITTELFUSE V130LA1
6
10
AND SILICON TRANSIENT SUPPRESSION DIODE
10
CURRENT (A)
LITTELFUSE MOV
SILICON
TRANSIENT
SUPPRESSION
DIODE
PRE TEST
8
RADS,
10
18MeV ELECTRONS
4
2
10
energy) handling capability with increased neutron fluence.
Failure threshold of Silicon semiconductor junctions is
further reduced when high or rapidly increasing currents
are applied. Junctions develop hot spots, which enlarge
until a short occurs if current is not limited or quickly
removed.
The characteristic voltage current relationship of a P– N
Junction is shown below.
SATURATION
CURRENT
BREAKDOWN
VO LTAGE
apparent that the Littelfuse MOV was virtually unaffected,
even at the extremely high dose of 108 rads, while the
Silicon transient suppression diode showed a dramatic
increase in leakage current.
Neutron Effects
A second MOV-Zener comparison was made in response to
neutron fluence. The selected devices were equal in area.
Figure 2 shows the clamping voltage response of the MOV
and the Zener to neutron irradiation to as high as 1015 N/
REDUCTION IN
FAILURE STRESSHOLD
BY RADIAL
SECONDARY
BREAKDOWN
REVERSE
BIAS
cm2. It is apparent that in contrast to the large change in
the Zener, the MOV is unaltered. At highercurrents where
the MOV’s clamping voltage is again unchanged, the Zener
device clamping voltage increases by as much as 36%.
300
VARISTOR V130A2
200
INITIAL AT 10
100
80
60
50
VO LTS
40
30
20
10
FIGURE 2. V-I CHARACTERISTIC RESPONSE TO NEUTRON
1.5K 200
12
AT 1 0
1.5K 200
AT 1 0
10
10
10
IRRADIATION FOR MOV AND ZENER DIODE
DEVICES
15
8
1.5K 200
13
AT 10
10
1.5K 200 INITIAL
1.5K 200
14
AT 1 0
7
6
10
AMPERES
15
5
10
10410
3
FIGURE 3. V-I CHARACTERISTIC OF PN-JUNCTION
At low reverse voltage, the device will conduct very little
current (the saturation current). At higher reverse voltage
VBO (breakdown voltage),the current increases rapidly as
the electrons are either pulled by the electric field (Zener
effect) or knocked out by other electrons (avalanching). A
further increase in voltage causes the device to exhibit a
negative resistance characteristic leading to secondary
breakdown.
This manifests itself through the formation of hotspots,
and irreversible damage occurs. This failure threshold
decreases under neutron irradiation for Zeners, but not for
O Varistors.
Z
N
Gamma Radiation
Radiation damage studies were performed on type
V130LA2 varistors. Emission spectra and V-I characteristics
were collected before and after irradiation with 106 rads
Co60 gamma radiation. Both show no change, within
experimental error, after irradiation.
I
FORWARD
BIAS
V
High Reliability Varistors
206
Revised: May 8, 2013
Please refer to www.littelfuse.com/series/za hirel.html or /db hirel.html
Specifications are subject to change without notice.