LITE-ON
SEMICONDUCTOR
UG1001 thru UG1007
UL T RA FA ST
GLASS PASS IVA T ED RECTIFIERS
FEATURES
Glass passivated chip
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
Easily cleaned with Freon, Alcohol, Chlorothene and
similar so lve nts
Plastic material has UL flammabitily classification
94V-0
MECHANI CAL DAT A
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
REVERSE VOLTAGE
FORWARD CURRENT
DO-41
A
Dim.
A
B
C
D
All Dimensions in millimeter
B
DO-41
Min.
25.4
4.10
0.71
2.00 2.70
- 50 to 1000
- 1.0
Ampere
A
D
Max.
-
5.20
0.86
Volts
C
MAXIMUM RATI NGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load , d erate curre n t b y 20%
V
V
V
I
I
T
R
STG
RRM
RMS
DC
(AV)
FSM
V
R
I
RR
C
0JA
F
J
,T
UG1001
J
CHARACTERISTICS
Maximum Recurren t Peak Reverse Volt age
Maximum RMS Volt a ge
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum forward V oltage a t 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage / Operating Temperature Range
NOTES : 1.Test condition of TRR:IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Ambient.
@T
A
=
@TJ=25 C
@TJ=100 C
SYMBOL
55 C
T
50
35
50
UG1002
100
70
100
1.0
UG1003
200
140
200
50
20
UG1004
-55 to +150
UG1005
400
280
400
1.0
30
1.3 1.7
100
40
600
420
600
5
UG1006
REV. 2, 01-Dec-2000, KDFC01
800
560
800
75
10
UG1007
1000
700
1000
UNIT
V
V
V
A
A
V
uA
ns
pF
C/W
C
RATING AND CHARACTERISTIC CURVES
UG1001 thru UG1007
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
AVERAGE FORWARD CURRENT
SINGLE PHASE HALF WAVE 60Hz
AMPERES
RESISTIVE OR INDUCTIVE LOAD
0.1
25
100
10
50
75 100 125 150
AMBIENT TEMPERATURE , C
FIG.3 - TYPICAL JUNCTION CAPACITANCE
UG1001 to UG1004
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
20
10
Pulse width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES A T 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
UG1001 to UG1004
UG1004
UG1005 to UG 1 00 7
CAPACITANCE , ( p F)
TJ= 25 C, f = 1MHz
1.0
1
4
10
100
REVERS E VOLTAGE , VOLTS
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
0.2
0.4
0.6 0.8 1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
UG1005 to UG1007
TJ= 25 C
PULSE WIDTH 300us
1.4
1.6
1.8
2.0
REV. 2, 01-Dec-2000, KDFC01
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