LITE-ON
SEMICONDUCTOR
TB0640M thru TB3500M
SURFA C E MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass P assivated Ju nction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Den otes none ca tho de band
Weight : 0.09 3 grams
Bi-Directional
VDRM IPP -
SMB
A
B
G
H
E
C
D
F
58 to 320
50
Amperes
DIM. MIN. MAX.
A
B
C
D
E
F
G
H
All Dimensions in mi llimeter
Volts
SMB
4.06 4.57
3.94 3.30
1.96
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
2.21
0.31 0.15
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMAL RESISTANCE
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
MAXIM UM RATED SURGE WAVEFORM
PP
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
(A)
300
250
150
100
75
50
SYMBOL
PP
I
TSM
I
T
STG
T
SYMBOL
Rth
Rth
△
VBR/△T
J
(J-L)
(J-A)
, PEAK PULSE CURRENT (%)
PP
I
100
50
0
J
tr tp
VALUE
50
25
-40 to +150
-55 to +150
VALUE
20
100
0.1
Peak value (Ipp)
tr= rise time to pea k value
tp= De cay ti me to half valu e
Half value
TIME
REV. 0, 09-O ct-200 1, KS WB06
UNIT
A
A
℃
℃
UNIT
℃
/W
℃
/W
℃
%/
ELECTRICAL CHARACTERIST ICS
TB0640M thru TB3500M
@ T
A=
℃℃℃℃
25
unless otherwise specified
PARAMETER
SYMBOL
UNITS
LIMIT
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
RATED
REPETITIVE
OFF-STATE
VOLTAGE
DRM
V
Volts uA Volts Volts mA mA mA pF
Max
58
65
75
90
120
140
160
190
OFF-STATE
LEAKAGE
CURRENT
DRM
@ V
DRM
I
BREAKOVER
VOLTAGE
BO
V
ON-STATE
VOLTAGE
T
=1.0A
@ I
T
V
BREAKOVER
CURRENT
IBO-I
BO+
HOLDING
CURRENT
H-
I
H+
I
mA
Max Max Max Min Max Min Typ
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
50
50
50
50
50
50
50
50
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
Max
800
800
800
800
800
800
800
800
OFF-STATE
CAPACITANCE
Co
140
140
140
90
90
90
90
60
TB2600M
TB3100M
TB3500M
SYMBOL
DRM
V
DRM
I
BR
V
BR
I
BO
V
BO
I
H
I
T
V
PP
I
O
C
220
275
320
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current Note: 1
On state voltage
Peak pulse current
Off state capacitance Note: 2
5
5
5
PARAMETER
300
350
400
3.5
3.5
3.5
I
I
DRM
I
PP
BO
150
150
150
I
H
I
T
V
V
800
800
800
DRM
50
800
50
800
50
800
BR
I
60
60
60
BR
V
V
BO
V
REV. 0, 09-O ct-200 1, KS WB06
NOTES: 1. IH> (VL/RL) If this criterion is not obeyed, the T
SPD
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
Triggers but does not return correctly to high-resistance state.
RMS
signal; VR=2V
DC
bias.
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