LITE-ON
SEMICONDUCTOR
STPR805DB thru 820DB
SUPER FA S T
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
REVERSE VOLTAGE FORWARD CURRENT -
TO-220AC
C
K
12
I
PIN 1
PIN 2
B
PIN
H
L
D
E
F
J
N
CASE
M
DIM.
A
G
All Dimensions in millimeter
50 to 200
8.0
Amperes
TO-220AC
MIN.
14.22 15.88
A
9.65
B
2.54
C
D
5.84
8.26
E
F
-
12.70
G
H
4.83
0.51
I
J
K
3.53 4.09
L
3.56 4.83
M
1.14 1.40
2.03
N
Volts
MAX.
10.67
3.43
6.86
9.28
6.35
14.73
5.33
1.14
0.64 0.30
2.92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Metod)
Maximum Forward
Voltage
Maximum DC Reverse Cu rrent
at Peak Reverse Voltage
Typical Junction
Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
I
8A
F
=
@T
125 C
C
=
J
=25 C
@T
@TJ =150 C
@TJ =25 C
@TJ =100 C
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
F
V
R
I
J
C
RR
T
0JC
R
STG
,T
J
T
STPR805DB
50
35
50
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
F
2.Reverse Recovery Test Conditions:I
=0.5A,IR=1.0A ,IRR0.25A.
3.Thermal Resis tance Junction to Case.
STPR810DB
100
70
100
STPR815DB
8
100
1.3
0.8
10
500
45
25
3.0
-55 to +150
STPR820DB
150
105
150
REV. 3, 13-Sep-2001, KTGA03
200
140
200
UNIT
V
V
V
A
A
V
uA
pF
ns
C/W
C
RATING AND CHARACTERISTIC CURVES
STPR805DB thru STPR820DB
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
AVERAGE FORWARD CURRENT
RESISTIVE OR INDUCTIVE LOAD
AMPERES
0
0
0
WITH HEATSINK T
FREE AMBIENT T
25
50
C
A
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100.0
10.0
1.0
REVERSE CURRENT ,(uA)
0.1
TJ= 125 C
TJ= 100 C
TJ= 25 C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
NUMBE R OF CY CLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
TJ= 150 C
1.0
1.0
20
TJ= 25 C
INSTANTANEOUS
0.01
0.001
0
20 40
60 80 100
PERCE NT OF R ATED PE AK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
CAPACITANCE , (pF)
TJ= 25 C, f= 1MHz
10
0.1
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
120
140
1
0.1
0
10
4
REVERS E VOLTAGE , VO LTS
PULSE WIDTH 300us
2% Duty cycle
1.4
0.2 0.4
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.6 0.8 1.0
100
1.2
1.6
1.8
REV. 3, 13 -Sep-2001, KTGA03
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